Titre :	Contribution à l’étude du transport quantique et des performances fréquentielles de DGMOS nanométriques
Type de document :	texte imprimé
Auteurs :	Mourad Bella, Auteur ; Saida Latreche, Directeur de thèse
Editeur :	جامعة الإخوة منتوري قسنطينة
Année de publication :	2017
Importance :	123 f.
Format :	30 cm.
Note générale :	2 copies imprimées disponibles
Langues :	Français (fre)
Catégories :	Français - Anglais Electronique
Tags :	Transistor double grille DGMOS  effet tunnel  technologie High-k  Oscillateur radio fréquence  Oscillateur Colpitts  bruit de phase  modèle Hajimiri  fonction de sensibilité ISF  Double gate transistor DGMOS  tunneling effect  High-k technology  radiofrequency oscillator  Oscillator Colpitts  phase noise  Hajimiri model  sensitivity function ISF  الترانزستور مزدوج البوابة  DGMOSتأثير النفق، تكنولوجيا  High-kمذبذب ISF  دالة الحساسيةHajimiri  ضجيج الطور  نموذجColpitts  منذبذradiofréquence
Index. décimale :	621 Electronique
Résumé :	The work developed in this thesis correspond to the modeling of MOS transistor double gate DGMOS and its potential for radio frequency applications. Our study extends the characterization / modeling DGMOS optimization Colpitts oscillator type where this component forms the amplifier element. The first part, we are interested in modeling nanometer DGMOS in order to best optimize their electrical performance. DGMOS modeling is performed using a simulation code based on the Newton-Raphson algorithm for solving the Poisson and Schrödinger equations which are discretized by finite difference method. however, the constant decrease in the size of the MOS transistors engenders parasitic phenomena such as: tunnel effect, DIBL effect …, that affect the static and dynamic performance of component. La The solution most commonly used to reduce these effect is to replace the SiO2 layer by an insulating layer high permittivity says'high-k'. In our study, we considered oxides Zirconium and Hafnium represent that the materials with high permittivity most used. Results of the analysis that we conducted using the Highk materials in the transistor DGMOS can significantly reduce the tunneling current. The second part of this thesis is devoted a study on the phase noise a VCO oscillator Coplpitts type integrating considered DGMOS. This study is based on the model of Hajimiri which proposes a technique for noise calculation based on a study of the oscillator phase sensitivity. We therefore developed a method for determining the phase noise in an oscillator LC resonator type Based on the model of Hajimiri. We were able to Montres the variant nature of phase noise in the oscillator. This led us to identify noise sensitive areas and times when the system is most vulnerable to parasitic noise source.
Diplôme :	Doctorat en sciences
En ligne :	../theses/electronique/BEL7065.pdf
Format de la ressource électronique :	pdf
Permalink :	index.php?lvl=notice_display&id=10536

Contribution à l’étude du transport quantique et des performances fréquentielles de DGMOS nanométriques [texte imprimé] / Mourad Bella, Auteur ; Saida Latreche, Directeur de thèse . - جامعة الإخوة منتوري قسنطينة, 2017 . - 123 f. ; 30 cm.
2 copies imprimées disponibles

Langues : Français (fre)

Catégories :	Français - Anglais Electronique
Tags :	Transistor double grille DGMOS  effet tunnel  technologie High-k  Oscillateur radio fréquence  Oscillateur Colpitts  bruit de phase  modèle Hajimiri  fonction de sensibilité ISF  Double gate transistor DGMOS  tunneling effect  High-k technology  radiofrequency oscillator  Oscillator Colpitts  phase noise  Hajimiri model  sensitivity function ISF  الترانزستور مزدوج البوابة  DGMOSتأثير النفق، تكنولوجيا  High-kمذبذب ISF  دالة الحساسيةHajimiri  ضجيج الطور  نموذجColpitts  منذبذradiofréquence
Index. décimale :	621 Electronique
Résumé :	The work developed in this thesis correspond to the modeling of MOS transistor double gate DGMOS and its potential for radio frequency applications. Our study extends the characterization / modeling DGMOS optimization Colpitts oscillator type where this component forms the amplifier element. The first part, we are interested in modeling nanometer DGMOS in order to best optimize their electrical performance. DGMOS modeling is performed using a simulation code based on the Newton-Raphson algorithm for solving the Poisson and Schrödinger equations which are discretized by finite difference method. however, the constant decrease in the size of the MOS transistors engenders parasitic phenomena such as: tunnel effect, DIBL effect …, that affect the static and dynamic performance of component. La The solution most commonly used to reduce these effect is to replace the SiO2 layer by an insulating layer high permittivity says'high-k'. In our study, we considered oxides Zirconium and Hafnium represent that the materials with high permittivity most used. Results of the analysis that we conducted using the Highk materials in the transistor DGMOS can significantly reduce the tunneling current. The second part of this thesis is devoted a study on the phase noise a VCO oscillator Coplpitts type integrating considered DGMOS. This study is based on the model of Hajimiri which proposes a technique for noise calculation based on a study of the oscillator phase sensitivity. We therefore developed a method for determining the phase noise in an oscillator LC resonator type Based on the model of Hajimiri. We were able to Montres the variant nature of phase noise in the oscillator. This led us to identify noise sensitive areas and times when the system is most vulnerable to parasitic noise source.
Diplôme :	Doctorat en sciences
En ligne :	../theses/electronique/BEL7065.pdf
Format de la ressource électronique :	pdf
Permalink :	index.php?lvl=notice_display&id=10536