| Titre : |
Study of the properties of heterostructures based on semiconductor metal oxides obtained by electrochemical deposition. |
| Type de document : |
texte imprimé |
| Auteurs : |
Halla Lahmar, Auteur ; Fatima Setifi, Directeur de thèse ; Amor Azizi, Directeur de thèse |
| Editeur : |
جامعة الإخوة منتوري قسنطينة |
| Année de publication : |
2018 |
| Importance : |
107 f. |
| Format : |
30 cm. |
| Note générale : |
2 copies imprimées disponibles
|
| Langues : |
Anglais (eng) |
| Catégories : |
Français - Anglais
Chimie
|
| Tags : |
Electrodéposition ZnO/Cu2O Hétérojonctions Décalage de Bande Electrodeposition heterojunctions band offset الترسيب الكهروكيميائي Cu2O/ZnOمتماثل القطبين فرق نطاق التكافؤ |
| Index. décimale : |
540 Chimie et sciences connexes |
| Résumé : |
The main goal of this thesis was to improve the performance of the electrodeposited Cu2O/ZnO heterojunction device by applying many strategies, such as the insertion of ZnO buffer layer, adjusting the pH of Cu2O deposition bath and engineering a back surface field architecture. At first, we deposited a p-Cu2O layer on n-ZnO (or AZO) layer by two steps electrodeposition. The properties of Cu2O/ZnO and Cu2O/Al:ZnO heterojunctions were investigated and we confirmed a good performance for Cu2O/ZnO device. To improve the performance for of this latter we deposited Cu2O/ZnO/Al:ZnO device by inserting ZnO layer, with different thickness, between Al: ZnO and Cu2O to enhance the mismatch and reduce the band offset. The device with 200nm ZnO show improvement of the performance compared to Cu2O/ZnO and Cu2O/Al: ZnO. Then, we improved the quality of Cu2O by increasing the deposition pH values and used it as an absorber layer. The Cu2O/ZnO heterojunction with 500 nm Cu2O deposited at pH 12 shows the best performance due to the low valence band offset of 1.8 eV. Finally, we fabrication Cu2O+/Cu2O/ZnO to enhance the light absorbance and the carrier collection length by the creation of back surface field devices. The 150 nm Cu2O+/300 nm Cu2O/ZnO heterojunction shows the best performance due to the low band valence offset (∆Ev) between 150 nm Cu2O+/300 nm Cu2O structure and ZnO layer.
|
| Diplôme : |
Doctorat |
| En ligne : |
../theses/chimie/LAH7277.pdf |
| Format de la ressource électronique : |
pdf |
| Permalink : |
index.php?lvl=notice_display&id=10892 |
Study of the properties of heterostructures based on semiconductor metal oxides obtained by electrochemical deposition. [texte imprimé] / Halla Lahmar, Auteur ; Fatima Setifi, Directeur de thèse ; Amor Azizi, Directeur de thèse . - جامعة الإخوة منتوري قسنطينة, 2018 . - 107 f. ; 30 cm. 2 copies imprimées disponibles
Langues : Anglais ( eng)
| Catégories : |
Français - Anglais
Chimie
|
| Tags : |
Electrodéposition ZnO/Cu2O Hétérojonctions Décalage de Bande Electrodeposition heterojunctions band offset الترسيب الكهروكيميائي Cu2O/ZnOمتماثل القطبين فرق نطاق التكافؤ |
| Index. décimale : |
540 Chimie et sciences connexes |
| Résumé : |
The main goal of this thesis was to improve the performance of the electrodeposited Cu2O/ZnO heterojunction device by applying many strategies, such as the insertion of ZnO buffer layer, adjusting the pH of Cu2O deposition bath and engineering a back surface field architecture. At first, we deposited a p-Cu2O layer on n-ZnO (or AZO) layer by two steps electrodeposition. The properties of Cu2O/ZnO and Cu2O/Al:ZnO heterojunctions were investigated and we confirmed a good performance for Cu2O/ZnO device. To improve the performance for of this latter we deposited Cu2O/ZnO/Al:ZnO device by inserting ZnO layer, with different thickness, between Al: ZnO and Cu2O to enhance the mismatch and reduce the band offset. The device with 200nm ZnO show improvement of the performance compared to Cu2O/ZnO and Cu2O/Al: ZnO. Then, we improved the quality of Cu2O by increasing the deposition pH values and used it as an absorber layer. The Cu2O/ZnO heterojunction with 500 nm Cu2O deposited at pH 12 shows the best performance due to the low valence band offset of 1.8 eV. Finally, we fabrication Cu2O+/Cu2O/ZnO to enhance the light absorbance and the carrier collection length by the creation of back surface field devices. The 150 nm Cu2O+/300 nm Cu2O/ZnO heterojunction shows the best performance due to the low band valence offset (∆Ev) between 150 nm Cu2O+/300 nm Cu2O structure and ZnO layer.
|
| Diplôme : |
Doctorat |
| En ligne : |
../theses/chimie/LAH7277.pdf |
| Format de la ressource électronique : |
pdf |
| Permalink : |
index.php?lvl=notice_display&id=10892 |
|
Study of the properties of heterostructures based on semiconductor metal oxides obtained by electrochemical deposition.
