Titre :	Etude du comportement electrique des semiconducteurs multicristallins à base de silicium – effet des joints de grains.
Type de document :	texte imprimé
Auteurs :	Fella Boulgamh, Auteur ; Mohamed Remram, Directeur de thèse
Editeur :	جامعة الإخوة منتوري قسنطينة
Année de publication :	2018
Importance :	117 f.
Format :	30 cm.
Note générale :	2 copies imprimées disponibles
Langues :	Français (fre)
Catégories :	Français - Anglais Electronique
Tags :	Silicium multicristallin  caractérisation I(V) et C(V)  méthode itérative  diodes Schottky et pn  ac-small signal  identification  système fractionnaire  système entier  Multicrystalline silicon  I(V) and C(V) characterization  iterative method  Schottky and ݊pn diodes  fractional systems  integer systems  السيليسيوم المتعدد البلورات  التوصيف I(V)و C(V)و ܥ  الطرق التكرارية للصمامات الثنائية pnو شوتكي  الأنظمة ذات الدرجة الجزئية  الأنظمة ذات الدرجة الصحيحة
Index. décimale :	621 Electronique
Résumé :	This thesis deals with two principle axes : • Statistical characterization • And dynamical characterization of pn and Schottky (Al/mc-Si) diodes. Statistical characterization is done through experimental ܫሺܸሻ and ܥሺܸሻ measures using Polix-Photowatt multicristalline silicon structures. Parameters taken into account were the Aluminium plot position, the metal nature and the operating temperature. We used an iterative ܫሺܸሻ method and we developed a ܥሺܸሻ method to extract diode parameters. Results obtained indicated the presence of trap levels in the grain boundaries, an important effect of the metal position and operating temperature. Dynamical characterization is carried out by the ac-small signal measurements applied to Shottky and ݊݌diodes. These structures identification showed a fractional behavior of the ݊݌diode and an integer behavior of the Schottky one. The main contributions of this work were then: • The electrical characterization of multicrystalline silicon through Schottky Al/mc-Si diodes; • Development of an iterative method based on ܥሺܸሻ measurements to extract active doping densities; • Proposition of an electrical equivalent circuit to explain polycrystalline silicon electrical behavior; • Proposition of an identification diode method based on ac-small signal measurements; • Experimental demonstration that ݊݌diode is a fractional system and Schottky diode is an integer one.
Diplôme :	Doctorat en sciences
En ligne :	../theses/electronique/BOU7322.pdf
Format de la ressource électronique :	pdf
Permalink :	index.php?lvl=notice_display&id=10972

Etude du comportement electrique des semiconducteurs multicristallins à base de silicium – effet des joints de grains. [texte imprimé] / Fella Boulgamh, Auteur ; Mohamed Remram, Directeur de thèse . - جامعة الإخوة منتوري قسنطينة, 2018 . - 117 f. ; 30 cm.
2 copies imprimées disponibles

Langues : Français (fre)

Catégories :	Français - Anglais Electronique
Tags :	Silicium multicristallin  caractérisation I(V) et C(V)  méthode itérative  diodes Schottky et pn  ac-small signal  identification  système fractionnaire  système entier  Multicrystalline silicon  I(V) and C(V) characterization  iterative method  Schottky and ݊pn diodes  fractional systems  integer systems  السيليسيوم المتعدد البلورات  التوصيف I(V)و C(V)و ܥ  الطرق التكرارية للصمامات الثنائية pnو شوتكي  الأنظمة ذات الدرجة الجزئية  الأنظمة ذات الدرجة الصحيحة
Index. décimale :	621 Electronique
Résumé :	This thesis deals with two principle axes : • Statistical characterization • And dynamical characterization of pn and Schottky (Al/mc-Si) diodes. Statistical characterization is done through experimental ܫሺܸሻ and ܥሺܸሻ measures using Polix-Photowatt multicristalline silicon structures. Parameters taken into account were the Aluminium plot position, the metal nature and the operating temperature. We used an iterative ܫሺܸሻ method and we developed a ܥሺܸሻ method to extract diode parameters. Results obtained indicated the presence of trap levels in the grain boundaries, an important effect of the metal position and operating temperature. Dynamical characterization is carried out by the ac-small signal measurements applied to Shottky and ݊݌diodes. These structures identification showed a fractional behavior of the ݊݌diode and an integer behavior of the Schottky one. The main contributions of this work were then: • The electrical characterization of multicrystalline silicon through Schottky Al/mc-Si diodes; • Development of an iterative method based on ܥሺܸሻ measurements to extract active doping densities; • Proposition of an electrical equivalent circuit to explain polycrystalline silicon electrical behavior; • Proposition of an identification diode method based on ac-small signal measurements; • Experimental demonstration that ݊݌diode is a fractional system and Schottky diode is an integer one.
Diplôme :	Doctorat en sciences
En ligne :	../theses/electronique/BOU7322.pdf
Format de la ressource électronique :	pdf
Permalink :	index.php?lvl=notice_display&id=10972