Titre :	Caracterisation de films minces déposés par plasma RCER à partir de diphenylemethèesilane (DPMS) en vue de l'obtention d'un materiau à faible permitivité (low k) pour des applications microelectroniques
Type de document :	texte imprimé
Auteurs :	Leila Bouledjnib ; Univ. de Constantine, Éditeur scientifique ; S. Sahèi, Directeur de thèse
Année de publication :	2005
Importance :	67 f.
Note générale :	01 Disponible à la salle de recherche 02 Disponibles au magazin de la bibliothèque centrale 01 CD
Langues :	Français (fre)
Catégories :	Français - Anglais Electronique
Tags :	Matériau  Films minces  Diphenylemethèesilane  Faible permitivité  Applications microelectroniques
Index. décimale :	621 Electronique
Résumé :	The aim of this work deals with the study of dielectric, physico-chemical properties and the step voltage responses of thin films deposited by plasma PECVD in microwave DECR plasma reactor have been studied. The films were elaborated from pur biphenylmethylsilane (DPMS) vapor or in a mixture with a partial pressure of oxygen. The physico-chemical analysis allowed us to identify the different chemical elements present in the deposited DPMS films, with and without the addition of oxygen. The chemical composition was influenced by the power discharge of the plasma. The dielectrical analysis has permitted to evaluat the influence of the chemical composition on the dielectric constant as well as on the losses dielectric of the deposited films. The films responses to step voltage excitation have shown the presence of a transient current regardless of the discharges parametres. The analysis of the absorption and resorption current suggest a conduction limited by space charge mechanism which may be responsible for the transient currents. The carriers movement can be controlled by the mechanism of conduction limited by space charge and/or Poole Frenkel effect.
Diplôme :	Magistère
En ligne :	../theses/electronique/BOU4303.pdf
Permalink :	index.php?lvl=notice_display&id=2741

Caracterisation de films minces déposés par plasma RCER à partir de diphenylemethèesilane (DPMS) en vue de l'obtention d'un materiau à faible permitivité (low k) pour des applications microelectroniques [texte imprimé] / Leila Bouledjnib ; Univ. de Constantine, Éditeur scientifique ; S. Sahèi, Directeur de thèse . - 2005 . - 67 f.
01 Disponible à la salle de recherche 02 Disponibles au magazin de la bibliothèque centrale
01 CD
Langues : Français (fre)

Catégories :	Français - Anglais Electronique
Tags :	Matériau  Films minces  Diphenylemethèesilane  Faible permitivité  Applications microelectroniques
Index. décimale :	621 Electronique
Résumé :	The aim of this work deals with the study of dielectric, physico-chemical properties and the step voltage responses of thin films deposited by plasma PECVD in microwave DECR plasma reactor have been studied. The films were elaborated from pur biphenylmethylsilane (DPMS) vapor or in a mixture with a partial pressure of oxygen. The physico-chemical analysis allowed us to identify the different chemical elements present in the deposited DPMS films, with and without the addition of oxygen. The chemical composition was influenced by the power discharge of the plasma. The dielectrical analysis has permitted to evaluat the influence of the chemical composition on the dielectric constant as well as on the losses dielectric of the deposited films. The films responses to step voltage excitation have shown the presence of a transient current regardless of the discharges parametres. The analysis of the absorption and resorption current suggest a conduction limited by space charge mechanism which may be responsible for the transient currents. The carriers movement can be controlled by the mechanism of conduction limited by space charge and/or Poole Frenkel effect.
Diplôme :	Magistère
En ligne :	../theses/electronique/BOU4303.pdf
Permalink :	index.php?lvl=notice_display&id=2741