| Titre : |
Caractérisation électrique des HEMTs à base de nitrure de gallium AlGaN/GaN |
| Type de document : |
texte imprimé |
| Auteurs : |
Zakia Abdelaziz Fares ; Univ. de Constantine, Éditeur scientifique ; A. Telia, Directeur de thèse |
| Année de publication : |
2005 |
| Importance : |
59 f. |
| Note générale : |
01 Disponible à la salle de recherche 02 Disponibles au magazin de la bibliothèque centrale
01 CD |
| Langues : |
Français (fre) |
| Catégories : |
Français - Anglais
Electronique
|
| Tags : |
HEMTs Nitrure de Gallium AlGaN/GaN |
| Index. décimale : |
621 Electronique |
| Résumé : |
These last years, transistor HEMT (High Electron Mobility Transistors) AlGaN/GaN is the object of intense research. Those showed the effectiveness of this component for various applications requiring with an other higher tensions, temperatures and powers. However, the HEMTs structures containing nitride are limited by a combination of mechanisms such as dislocations and the many structural defects in the volume and in the surface of material degrading thus the electric performances of the transistor. The first study repported in this memory show the behavior of the HEMT AlGaN/GaN.
The concentration of the free carriers of the 2-DEG in the channel reaches values about 1013cm -2
for various levels of doping. The values of calculated currents are a direct consequence.
A second study of the electric characteristics (capacity and conductance) of the structure Schottky (grid source) of type HEMT (High Electron Mobility Transistors) AlxGa1-x N/GaN noted A242 measured at various frequencies, tensions and temperature allowed the quantification of the interface states in the interface of AlGaN/GaN heterostructure. |
| Diplôme : |
Magistère |
| En ligne : |
../theses/electronique/ABD4304.pdf |
| Permalink : |
index.php?lvl=notice_display&id=2792 |
Caractérisation électrique des HEMTs à base de nitrure de gallium AlGaN/GaN [texte imprimé] / Zakia Abdelaziz Fares ; Univ. de Constantine, Éditeur scientifique ; A. Telia, Directeur de thèse . - 2005 . - 59 f. 01 Disponible à la salle de recherche 02 Disponibles au magazin de la bibliothèque centrale
01 CD Langues : Français ( fre)
| Catégories : |
Français - Anglais
Electronique
|
| Tags : |
HEMTs Nitrure de Gallium AlGaN/GaN |
| Index. décimale : |
621 Electronique |
| Résumé : |
These last years, transistor HEMT (High Electron Mobility Transistors) AlGaN/GaN is the object of intense research. Those showed the effectiveness of this component for various applications requiring with an other higher tensions, temperatures and powers. However, the HEMTs structures containing nitride are limited by a combination of mechanisms such as dislocations and the many structural defects in the volume and in the surface of material degrading thus the electric performances of the transistor. The first study repported in this memory show the behavior of the HEMT AlGaN/GaN.
The concentration of the free carriers of the 2-DEG in the channel reaches values about 1013cm -2
for various levels of doping. The values of calculated currents are a direct consequence.
A second study of the electric characteristics (capacity and conductance) of the structure Schottky (grid source) of type HEMT (High Electron Mobility Transistors) AlxGa1-x N/GaN noted A242 measured at various frequencies, tensions and temperature allowed the quantification of the interface states in the interface of AlGaN/GaN heterostructure. |
| Diplôme : |
Magistère |
| En ligne : |
../theses/electronique/ABD4304.pdf |
| Permalink : |
index.php?lvl=notice_display&id=2792 |
|
Caractérisation électrique des HEMTs à base de nitrure de gallium AlGaN/GaN
