Détail de l'auteur
Auteur Amor Azizi |
Documents disponibles écrits par cet auteur (2)
Affiner la recherche Interroger des sources externes
Titre : Study of a nanostructured compound based on II-VI semiconductors (ZnS). Type de document : texte imprimé Auteurs : Khaoula Ghezali, Auteur ; Boubekeur Boudine, Directeur de thèse ; Amor Azizi, Directeur de thèse Editeur : جامعة الإخوة منتوري قسنطينة Année de publication : 2018 Importance : 131 f. Format : 30 cm. Note générale : 2 copies imprimées disponibles
Langues : Anglais (eng) Catégories : Français - Anglais
PhysiqueTags : Electrodéposition nanostructures ZnS Mott-Schottky TRPL. الهياكل النانوية كبريت الزنك العناصر الأرضية النادرة Index. décimale : 530 Physique Résumé : This thesis deals with the elaboration and characterization of zinc sulfide (ZnS) nanostructures for photovoltaic applications. We used the electrochemical deposition method to synthesize these films, and this, for its simplicity and low cost. The deposit solution is composed of zinc sulfate and sodium thiosulfate (Na2S2O3) as sources of Zn and S, respectively. This work is devised on two part. First, the samples were prepared by varying several parameters such as zinc concentration, pH, deposition potential and time deposition. The obtained nanostructures were subjected to various characterizations such as electronic (Mott-Schottky), morphological (SEM, AFM), Structural (XRD) and optical properties (UV-Vis). The Mott-Schottky measures showed that the films have an n-type conductivity when the carrier concentration and flat band potential was strongly depend on the different parameters. The morphological characterization of the samples by AFM and SEM showed a significant change of the with topography different parameters. The structural analysis shows that the obtained films are monocrystalline, they exhibit a zinc blend structure. The preferential orientation is strongly related to the experimental parameters. Studied at the end of this part the optical results show a lower transmittance. The second part is devoted to the doping of ZnS nanostructures by rare earths (Er, Sm). An improvement of optical properties (transmittance 80%) was obtained when we increase the dopants concentration and the optical band gap increases after doping from 3.54 to 3.8 eV for both dopants. The time-resolved photoluminescence decay were used to determine the charge carrier transfer (life time) of ZnS with the Er and Sm doping.
Diplôme : Doctorat En ligne : ../theses/physique/GHE7310.pdf Format de la ressource électronique : Permalink : index.php?lvl=notice_display&id=10925 Study of a nanostructured compound based on II-VI semiconductors (ZnS). [texte imprimé] / Khaoula Ghezali, Auteur ; Boubekeur Boudine, Directeur de thèse ; Amor Azizi, Directeur de thèse . - جامعة الإخوة منتوري قسنطينة, 2018 . - 131 f. ; 30 cm.
2 copies imprimées disponibles
Langues : Anglais (eng)
Catégories : Français - Anglais
PhysiqueTags : Electrodéposition nanostructures ZnS Mott-Schottky TRPL. الهياكل النانوية كبريت الزنك العناصر الأرضية النادرة Index. décimale : 530 Physique Résumé : This thesis deals with the elaboration and characterization of zinc sulfide (ZnS) nanostructures for photovoltaic applications. We used the electrochemical deposition method to synthesize these films, and this, for its simplicity and low cost. The deposit solution is composed of zinc sulfate and sodium thiosulfate (Na2S2O3) as sources of Zn and S, respectively. This work is devised on two part. First, the samples were prepared by varying several parameters such as zinc concentration, pH, deposition potential and time deposition. The obtained nanostructures were subjected to various characterizations such as electronic (Mott-Schottky), morphological (SEM, AFM), Structural (XRD) and optical properties (UV-Vis). The Mott-Schottky measures showed that the films have an n-type conductivity when the carrier concentration and flat band potential was strongly depend on the different parameters. The morphological characterization of the samples by AFM and SEM showed a significant change of the with topography different parameters. The structural analysis shows that the obtained films are monocrystalline, they exhibit a zinc blend structure. The preferential orientation is strongly related to the experimental parameters. Studied at the end of this part the optical results show a lower transmittance. The second part is devoted to the doping of ZnS nanostructures by rare earths (Er, Sm). An improvement of optical properties (transmittance 80%) was obtained when we increase the dopants concentration and the optical band gap increases after doping from 3.54 to 3.8 eV for both dopants. The time-resolved photoluminescence decay were used to determine the charge carrier transfer (life time) of ZnS with the Er and Sm doping.
Diplôme : Doctorat En ligne : ../theses/physique/GHE7310.pdf Format de la ressource électronique : Permalink : index.php?lvl=notice_display&id=10925 Exemplaires (1)
Code-barres Cote Support Localisation Section Disponibilité GHE/7310 GHE/7310 Thèse Bibliothèque principale Thèses Disponible Study of the properties of heterostructures based on semiconductor metal oxides obtained by electrochemical deposition. / Halla Lahmar
Titre : Study of the properties of heterostructures based on semiconductor metal oxides obtained by electrochemical deposition. Type de document : texte imprimé Auteurs : Halla Lahmar, Auteur ; Fatima Setifi, Directeur de thèse ; Amor Azizi, Directeur de thèse Editeur : جامعة الإخوة منتوري قسنطينة Année de publication : 2018 Importance : 107 f. Format : 30 cm. Note générale : 2 copies imprimées disponibles
Langues : Anglais (eng) Catégories : Français - Anglais
ChimieTags : Electrodéposition ZnO/Cu2O Hétérojonctions Décalage de Bande Electrodeposition heterojunctions band offset الترسيب الكهروكيميائي Cu2O/ZnOمتماثل القطبين فرق نطاق التكافؤ Index. décimale : 540 Chimie et sciences connexes Résumé : The main goal of this thesis was to improve the performance of the electrodeposited Cu2O/ZnO heterojunction device by applying many strategies, such as the insertion of ZnO buffer layer, adjusting the pH of Cu2O deposition bath and engineering a back surface field architecture. At first, we deposited a p-Cu2O layer on n-ZnO (or AZO) layer by two steps electrodeposition. The properties of Cu2O/ZnO and Cu2O/Al:ZnO heterojunctions were investigated and we confirmed a good performance for Cu2O/ZnO device. To improve the performance for of this latter we deposited Cu2O/ZnO/Al:ZnO device by inserting ZnO layer, with different thickness, between Al: ZnO and Cu2O to enhance the mismatch and reduce the band offset. The device with 200nm ZnO show improvement of the performance compared to Cu2O/ZnO and Cu2O/Al: ZnO. Then, we improved the quality of Cu2O by increasing the deposition pH values and used it as an absorber layer. The Cu2O/ZnO heterojunction with 500 nm Cu2O deposited at pH 12 shows the best performance due to the low valence band offset of 1.8 eV. Finally, we fabrication Cu2O+/Cu2O/ZnO to enhance the light absorbance and the carrier collection length by the creation of back surface field devices. The 150 nm Cu2O+/300 nm Cu2O/ZnO heterojunction shows the best performance due to the low band valence offset (∆Ev) between 150 nm Cu2O+/300 nm Cu2O structure and ZnO layer.
Diplôme : Doctorat En ligne : ../theses/chimie/LAH7277.pdf Format de la ressource électronique : Permalink : index.php?lvl=notice_display&id=10892 Study of the properties of heterostructures based on semiconductor metal oxides obtained by electrochemical deposition. [texte imprimé] / Halla Lahmar, Auteur ; Fatima Setifi, Directeur de thèse ; Amor Azizi, Directeur de thèse . - جامعة الإخوة منتوري قسنطينة, 2018 . - 107 f. ; 30 cm.
2 copies imprimées disponibles
Langues : Anglais (eng)
Catégories : Français - Anglais
ChimieTags : Electrodéposition ZnO/Cu2O Hétérojonctions Décalage de Bande Electrodeposition heterojunctions band offset الترسيب الكهروكيميائي Cu2O/ZnOمتماثل القطبين فرق نطاق التكافؤ Index. décimale : 540 Chimie et sciences connexes Résumé : The main goal of this thesis was to improve the performance of the electrodeposited Cu2O/ZnO heterojunction device by applying many strategies, such as the insertion of ZnO buffer layer, adjusting the pH of Cu2O deposition bath and engineering a back surface field architecture. At first, we deposited a p-Cu2O layer on n-ZnO (or AZO) layer by two steps electrodeposition. The properties of Cu2O/ZnO and Cu2O/Al:ZnO heterojunctions were investigated and we confirmed a good performance for Cu2O/ZnO device. To improve the performance for of this latter we deposited Cu2O/ZnO/Al:ZnO device by inserting ZnO layer, with different thickness, between Al: ZnO and Cu2O to enhance the mismatch and reduce the band offset. The device with 200nm ZnO show improvement of the performance compared to Cu2O/ZnO and Cu2O/Al: ZnO. Then, we improved the quality of Cu2O by increasing the deposition pH values and used it as an absorber layer. The Cu2O/ZnO heterojunction with 500 nm Cu2O deposited at pH 12 shows the best performance due to the low valence band offset of 1.8 eV. Finally, we fabrication Cu2O+/Cu2O/ZnO to enhance the light absorbance and the carrier collection length by the creation of back surface field devices. The 150 nm Cu2O+/300 nm Cu2O/ZnO heterojunction shows the best performance due to the low band valence offset (∆Ev) between 150 nm Cu2O+/300 nm Cu2O structure and ZnO layer.
Diplôme : Doctorat En ligne : ../theses/chimie/LAH7277.pdf Format de la ressource électronique : Permalink : index.php?lvl=notice_display&id=10892 Exemplaires (1)
Code-barres Cote Support Localisation Section Disponibilité LAH/7277 LAH/7277 Thèse Bibliothèque principale Thèses Disponible
