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Auteur Gian-Franco Dalla Betta |
Documents disponibles écrits par cet auteur (2)
Affiner la recherche Interroger des sources externesImpact des TSVs (Through Silicon Vias) sur les circuits CMOS nanom´etriques – Etude et conception d’un d´etecteur ´ verticalement int´egr´e de rayon X / Mohamed El Amine Benkechkache
Titre : Impact des TSVs (Through Silicon Vias) sur les circuits CMOS nanom´etriques – Etude et conception d’un d´etecteur ´ verticalement int´egr´e de rayon X Type de document : texte imprimé Auteurs : Mohamed El Amine Benkechkache, Auteur ; Saida Latreche, Directeur de thèse ; Gian-Franco Dalla Betta, Directeur de thèse Editeur : جامعة الإخوة منتوري قسنطينة Année de publication : 2018 Importance : 145 f. Format : 30 cm. Note générale : 2 copies imprimées disponibles
Langues : Français (fre) Catégories : Français - Anglais
ElectroniqueTags : Intégration 3D TSVs Circuits CMOS D´etecteur de rayons-X Simulation TCAD et Caractérisation électrique 3D Integration CMOS circuits X-ray detectors TCAD simulation and Device characterization التكنولوجيا ثلاثية الأبعاد الأسلاك العمودية القصيرة الدوائر المتكاملة كاشف الأشعة السينية Index. décimale : 621 Electronique Résumé : Current innovations in electronics combine performance, size and cost criteria. Nevertheless, in the all-digital era, the 2D technology and the fabrication of CMOS Integrated Circuits are approaching their ultimate limits. As a result, the use of 3D technology in the fabrication of different Integrated Circuits is becoming very appealing. Among the aspects of the 3D Integration we find the Through Silicon Vias (TSVs), short vertical interconnects that convey the different layers all kind of signals. 3D integration, first introduced for memory chips, has later found increasing application to other domains in microelectronics, particularly in radiation detectors. These imaging instrumentations are being used recently in many fields such as for the next generation free electron lasers (FELs) that are currently being developed in a few research centers worldwide. Among these, the X-ray Free Electron Lasers (XFELs). To fully exploit the potential of XFEL facilities, a new generation of image sensors using vertical integration technologies, as Through Silicon Vias (TSVs), and an enhanced characteristic with respect to currently-available devices
has to be manufactured. Therefore, this PhD work consists on the investigation of the impact of TSVs interconnects on CMOS circuits as well as the study and design of a vertically integrated X-ray detector. To this purpose, a numerical and an analytical analysis of CMOS circuits with a 3D-TSV technology is investigated. The most relevant technological parameters regarding TSVs are optimized. The knowledge gained from this analysis is used in the development for the multilayer large area X-ray imaging detector within
the framework of an R&D project PixFEL. These imaging instrumentations are studied and optimized first by means of TCAD simulations, considering the most relevant geometry and process parameters, allowing for structures with minimum edge size and larger operating bias conditions. The layout of wafers including different structures of edgeless sensors, arrays, and test structures are designed. The fabricated devices are electrically characterized, and the feasibility of the process is demonstrated along this work of this
thesis.
Diplôme : Doctorat En ligne : ../theses/electronique/BEN7280.pdf Format de la ressource électronique : Permalink : index.php?lvl=notice_display&id=10895 Impact des TSVs (Through Silicon Vias) sur les circuits CMOS nanom´etriques – Etude et conception d’un d´etecteur ´ verticalement int´egr´e de rayon X [texte imprimé] / Mohamed El Amine Benkechkache, Auteur ; Saida Latreche, Directeur de thèse ; Gian-Franco Dalla Betta, Directeur de thèse . - جامعة الإخوة منتوري قسنطينة, 2018 . - 145 f. ; 30 cm.
2 copies imprimées disponibles
Langues : Français (fre)
Catégories : Français - Anglais
ElectroniqueTags : Intégration 3D TSVs Circuits CMOS D´etecteur de rayons-X Simulation TCAD et Caractérisation électrique 3D Integration CMOS circuits X-ray detectors TCAD simulation and Device characterization التكنولوجيا ثلاثية الأبعاد الأسلاك العمودية القصيرة الدوائر المتكاملة كاشف الأشعة السينية Index. décimale : 621 Electronique Résumé : Current innovations in electronics combine performance, size and cost criteria. Nevertheless, in the all-digital era, the 2D technology and the fabrication of CMOS Integrated Circuits are approaching their ultimate limits. As a result, the use of 3D technology in the fabrication of different Integrated Circuits is becoming very appealing. Among the aspects of the 3D Integration we find the Through Silicon Vias (TSVs), short vertical interconnects that convey the different layers all kind of signals. 3D integration, first introduced for memory chips, has later found increasing application to other domains in microelectronics, particularly in radiation detectors. These imaging instrumentations are being used recently in many fields such as for the next generation free electron lasers (FELs) that are currently being developed in a few research centers worldwide. Among these, the X-ray Free Electron Lasers (XFELs). To fully exploit the potential of XFEL facilities, a new generation of image sensors using vertical integration technologies, as Through Silicon Vias (TSVs), and an enhanced characteristic with respect to currently-available devices
has to be manufactured. Therefore, this PhD work consists on the investigation of the impact of TSVs interconnects on CMOS circuits as well as the study and design of a vertically integrated X-ray detector. To this purpose, a numerical and an analytical analysis of CMOS circuits with a 3D-TSV technology is investigated. The most relevant technological parameters regarding TSVs are optimized. The knowledge gained from this analysis is used in the development for the multilayer large area X-ray imaging detector within
the framework of an R&D project PixFEL. These imaging instrumentations are studied and optimized first by means of TCAD simulations, considering the most relevant geometry and process parameters, allowing for structures with minimum edge size and larger operating bias conditions. The layout of wafers including different structures of edgeless sensors, arrays, and test structures are designed. The fabricated devices are electrically characterized, and the feasibility of the process is demonstrated along this work of this
thesis.
Diplôme : Doctorat En ligne : ../theses/electronique/BEN7280.pdf Format de la ressource électronique : Permalink : index.php?lvl=notice_display&id=10895 Exemplaires (1)
Code-barres Cote Support Localisation Section Disponibilité BEN/7280 BEN/7280 Thèse Bibliothèque principale Thèses Disponible
Titre : Silicon radiation detectors in 3D technology at high speed and low energy consumption. Type de document : texte imprimé Auteurs : Abderrezak Boughedda, Auteur ; Maya Lakhdara, Directeur de thèse ; Gian-Franco Dalla Betta, Directeur de thèse Mention d'édition : 22 décembre 2021 Editeur : جامعة الإخوة منتوري قسنطينة Année de publication : 2021 Importance : 107 f. Format : 30 cm. Note générale : Doctorat 3éme CYCLE LMD.
1 copies imprimées disponibles
Langues : Français (fre) Catégories : Français - Anglais
ElectroniqueTags : Electronique :Micro-Nanoélectronique et Photonique Technologie 3D détecteurs de rayons X HL-LHC capteurs 3D à petit pas simulation TCAD et caractérisation de dispositif 3D technology X-ray detectors small-pitch 3D sensors TCAD
simulation and Device characterization المستشعرات ثلاثية الأبعاد صغيرة صغيرة البعد مصادم البروتونات ذو الإشعاع العالي كاشفات الأشعة السينية المحاكاة و توصيف المستشعراتIndex. décimale : 621 Electronique Résumé :
In the last few years, there has been increased emphasis on silicon radiation detectors due to their importance for a wide range of industrial, medical and scientific applications. Unlike planar technology, the use of the 3D one in the fabrication of these kind of detectors offers advanced performances. The exploitation of the third dimension within the silicon substrate in the case of planar detectors actives its volume to be terminated physically and electrically without dicing. The first goal of this thesis is to enables the dead area reduction of an existing X-ray imaging detector for the free-electron laser facilities and obtaining the required high breakdown voltage under all conditions (⁓ 500 V). In 3D detectors case, the columns electrodes penetrate vertically in the bulk. As a result, the active volume is decoupled from the inter-electrode distance causing a lower depletion voltage and trapping probability, reducing the power dissipation and minimizing the inter pitch charge sharing. This makes them a very tempting choice for the future High luminosity Collider (HL- LHC) upgrades, where they should withstand very large particle fluences up to (2×1016 neq cm-2). 1-MeV equivalent neutrons. The second goal of this thesis is predicting the leakage current and charge collection efficiency (CCE) of small-pitch 3D sensors using TCAD simulation. The considered devices are irradiated at large fluences up to the maximum value foreseen at the innermost pixel layers at HL-LHC (2×1016 neq cm-2). Results are compared with experimental data from 3D diodes measured with a position resolved laser system in order to predict high signal efficiency and charge multiplication effects at high voltage, investigating the different distribution of the electric field, in particular to presence/intensity of the double peak.
Diplôme : Doctorat En ligne : ../theses/electronique/BOU7847.pdf Format de la ressource électronique : Permalink : index.php?lvl=notice_display&id=11833 Silicon radiation detectors in 3D technology at high speed and low energy consumption. [texte imprimé] / Abderrezak Boughedda, Auteur ; Maya Lakhdara, Directeur de thèse ; Gian-Franco Dalla Betta, Directeur de thèse . - 22 décembre 2021 . - جامعة الإخوة منتوري قسنطينة, 2021 . - 107 f. ; 30 cm.
Doctorat 3éme CYCLE LMD.
1 copies imprimées disponibles
Langues : Français (fre)
Catégories : Français - Anglais
ElectroniqueTags : Electronique :Micro-Nanoélectronique et Photonique Technologie 3D détecteurs de rayons X HL-LHC capteurs 3D à petit pas simulation TCAD et caractérisation de dispositif 3D technology X-ray detectors small-pitch 3D sensors TCAD
simulation and Device characterization المستشعرات ثلاثية الأبعاد صغيرة صغيرة البعد مصادم البروتونات ذو الإشعاع العالي كاشفات الأشعة السينية المحاكاة و توصيف المستشعراتIndex. décimale : 621 Electronique Résumé :
In the last few years, there has been increased emphasis on silicon radiation detectors due to their importance for a wide range of industrial, medical and scientific applications. Unlike planar technology, the use of the 3D one in the fabrication of these kind of detectors offers advanced performances. The exploitation of the third dimension within the silicon substrate in the case of planar detectors actives its volume to be terminated physically and electrically without dicing. The first goal of this thesis is to enables the dead area reduction of an existing X-ray imaging detector for the free-electron laser facilities and obtaining the required high breakdown voltage under all conditions (⁓ 500 V). In 3D detectors case, the columns electrodes penetrate vertically in the bulk. As a result, the active volume is decoupled from the inter-electrode distance causing a lower depletion voltage and trapping probability, reducing the power dissipation and minimizing the inter pitch charge sharing. This makes them a very tempting choice for the future High luminosity Collider (HL- LHC) upgrades, where they should withstand very large particle fluences up to (2×1016 neq cm-2). 1-MeV equivalent neutrons. The second goal of this thesis is predicting the leakage current and charge collection efficiency (CCE) of small-pitch 3D sensors using TCAD simulation. The considered devices are irradiated at large fluences up to the maximum value foreseen at the innermost pixel layers at HL-LHC (2×1016 neq cm-2). Results are compared with experimental data from 3D diodes measured with a position resolved laser system in order to predict high signal efficiency and charge multiplication effects at high voltage, investigating the different distribution of the electric field, in particular to presence/intensity of the double peak.
Diplôme : Doctorat En ligne : ../theses/electronique/BOU7847.pdf Format de la ressource électronique : Permalink : index.php?lvl=notice_display&id=11833 Exemplaires (1)
Code-barres Cote Support Localisation Section Disponibilité BOU/7847 BOU/7847 Thèse Bibliothèque principale Thèses Disponible
