| Titre : |
Etude et modélisation des phénomènes thermiques et de transport sur les performances des composants de puissance à base des hétérostructures AlGaN/GaN, AlInN/GaN. |
| Type de document : |
texte imprimé |
| Auteurs : |
Aissa Bellakhdar, Auteur ; Azzedine Telia, Directeur de thèse |
| Mention d'édition : |
26/01/2021 |
| Editeur : |
جامعة الإخوة منتوري قسنطينة |
| Année de publication : |
2021 |
| Importance : |
107 f. |
| Format : |
30 cm. |
| Note générale : |
1 copies imprimées disponibles
|
| Langues : |
Français (fre) |
| Catégories : |
Français - Anglais
Electronique
|
| Tags : |
Electronique:Microélectronique Cap GaN GaN / AlGaN / GaN GaN / AlInN / GaN HEMT Effet auto-échauffant GaN cap GaN/AlGaN/GaN GaN/AlInN/GaN Self-heating effect GaNغطاء تأثير التسخين الذاتي |
| Index. décimale : |
621 Electronique |
| Résumé : |
We present an analytical model for the I-V characteristics of AlGaN/GaN and AlInN/GaN high electron mobility transistors (HEMT). Our study focuses on the influence of a GaN capping layer, and of thermal and self-heating effects. (structures A). The saturated drain current drops significantly when the temperature rises above room temperature from 300 K to 425 K in both structures A and B. Furthermore, the self-heating effect strongly influences the Ids-Vds characteristics. Especially, the drain current at higher drain voltage becomes weaker and a negative resistance effect may arise. In conclusion, n+GaN/AlInN/GaN HEMTs exhibit better performance,
especially when covered with a thin highly-doped capping layer, even when selfheating and thermal effects are taken into account. Spontaneous and piezoelectric polarizations at Al(Ga,In)N/GaN and GaN/Al(Ga,In)N
interfaces have been incorporated in the analysis. Our model permits to fit several published data. Our results indicate that the GaN cap layer reduces the sheet density of the two-dimensional electron gas (2DEG), leading to a decrease of the drain current, and that n +-doped GaN cap layer provides a higher sheet density than
undoped one. In n + GaN/AlInN/GaN HEMTs, the sheet carrier concentration is higher than in n + GaN/AlGaN/GaN HEMTs, due to the higher spontaneous polarization charge and conduction band discontinuity at the substrate/barrier layer interface. HEMT’s performances are greatly degraded in by self-heating and thermal
effects, more in GaN/Al0.83InN0.17/GaN (structures B) than in GaN/Al0.32Ga0.68N /Ga
|
| Diplôme : |
Doctorat en sciences |
| En ligne : |
../theses/electronique/BEL7717.pdf |
| Format de la ressource électronique : |
pdf |
| Permalink : |
index.php?lvl=notice_display&id=11551 |
Etude et modélisation des phénomènes thermiques et de transport sur les performances des composants de puissance à base des hétérostructures AlGaN/GaN, AlInN/GaN. [texte imprimé] / Aissa Bellakhdar, Auteur ; Azzedine Telia, Directeur de thèse . - 26/01/2021 . - جامعة الإخوة منتوري قسنطينة, 2021 . - 107 f. ; 30 cm. 1 copies imprimées disponibles
Langues : Français ( fre)
| Catégories : |
Français - Anglais
Electronique
|
| Tags : |
Electronique:Microélectronique Cap GaN GaN / AlGaN / GaN GaN / AlInN / GaN HEMT Effet auto-échauffant GaN cap GaN/AlGaN/GaN GaN/AlInN/GaN Self-heating effect GaNغطاء تأثير التسخين الذاتي |
| Index. décimale : |
621 Electronique |
| Résumé : |
We present an analytical model for the I-V characteristics of AlGaN/GaN and AlInN/GaN high electron mobility transistors (HEMT). Our study focuses on the influence of a GaN capping layer, and of thermal and self-heating effects. (structures A). The saturated drain current drops significantly when the temperature rises above room temperature from 300 K to 425 K in both structures A and B. Furthermore, the self-heating effect strongly influences the Ids-Vds characteristics. Especially, the drain current at higher drain voltage becomes weaker and a negative resistance effect may arise. In conclusion, n+GaN/AlInN/GaN HEMTs exhibit better performance,
especially when covered with a thin highly-doped capping layer, even when selfheating and thermal effects are taken into account. Spontaneous and piezoelectric polarizations at Al(Ga,In)N/GaN and GaN/Al(Ga,In)N
interfaces have been incorporated in the analysis. Our model permits to fit several published data. Our results indicate that the GaN cap layer reduces the sheet density of the two-dimensional electron gas (2DEG), leading to a decrease of the drain current, and that n +-doped GaN cap layer provides a higher sheet density than
undoped one. In n + GaN/AlInN/GaN HEMTs, the sheet carrier concentration is higher than in n + GaN/AlGaN/GaN HEMTs, due to the higher spontaneous polarization charge and conduction band discontinuity at the substrate/barrier layer interface. HEMT’s performances are greatly degraded in by self-heating and thermal
effects, more in GaN/Al0.83InN0.17/GaN (structures B) than in GaN/Al0.32Ga0.68N /Ga
|
| Diplôme : |
Doctorat en sciences |
| En ligne : |
../theses/electronique/BEL7717.pdf |
| Format de la ressource électronique : |
pdf |
| Permalink : |
index.php?lvl=notice_display&id=11551 |
|
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