| Titre : |
Caractérisation et analyse des cellules solaires à base de silicium multicristallin |
| Type de document : |
texte imprimé |
| Auteurs : |
Zohra Benmohamed ; Univ. de Constantine, Éditeur scientifique ; Mohamed Remram, Directeur de thèse |
| Année de publication : |
2009 |
| Importance : |
95 f. |
| Format : |
30 cm |
| Note générale : |
01 Disponible à la salle de recherche 02 Disponibles au magazin de la B.U.C. 01 CD |
| Langues : |
Français (fre) |
| Catégories : |
Français - Anglais
Electronique
|
| Tags : |
Caractérisation Analyse Cellules solaires Silicium multicristallin Impurities Dislocations Multicrystalline silicon Solar cells Efficiency
الشوائب العيوب البنيوية السليسيوم متعدد البلوراتالخلايا الشمسية المردود |
| Index. décimale : |
621 Electronique |
| Résumé : |
An understanding of the comportment of defects and Impurities in multicrystalline silicon in turn leads
to a clearer picture of the limiting mechanisms in solar cells made with this promising material, and points to
possible paths for improvement. In this study a three diagnostic approach has been adopted for the
characterization of multicrystalline silicon samples, it comprises structural, chemical and electrical analysis of
the various minority diffusion length limiting defects and impurities which are responsible for the degradation of
the performances of multicrystalline silicon solar cells.
Preferential defect etching ions provided for the structural analysis. This approach was useful in
determining the nature and distribution of the structural defects. The work then focuses on chemical
characterization of impurities and the analytical tool used for this purpose were Fourier Transform Infra-red
Spectroscopy (FTIR). The results of annealing processes shown that, Rapid Thermal Annealing can dissociate
some oxygen precipitates existing in silicon material. This dissociation is accompanied by a degradation of the
bulk diffusion length. The effect of RTA on oxygen precipitation is extensively depending on the thermal history
of the material, the initial oxygen content and the existing precipitates in the material.
The above characterization tools were well complemented by electrical characterization through
Surface photovoltage (SPV) to determined minority diffusion length.
The results of PC1D modelling on multicrystalline silicon solar cells revealed that dislocations are not
the major factor that influences electrical properties of material. Impurities which were already present in the
grown material in an inactive form in particular the growth of oxygen precipitates and metallic impurities and
which have been electrically activated in an inhomogeneous distribution are also a principal source of
deterioration of polycrystalline silicon solar cells performances.
Thus there is a scope for attaining still higher efficiencies by further optimization of growth material
and cell processes to reduce reflection loss and effectively trapping the light inside the cell. |
| Diplôme : |
Doctorat en sciences |
| En ligne : |
../theses/electronique/BEN5287.pdf |
| Format de la ressource électronique : |
pdf |
| Permalink : |
index.php?lvl=notice_display&id=2774 |
Caractérisation et analyse des cellules solaires à base de silicium multicristallin [texte imprimé] / Zohra Benmohamed ; Univ. de Constantine, Éditeur scientifique ; Mohamed Remram, Directeur de thèse . - 2009 . - 95 f. ; 30 cm. 01 Disponible à la salle de recherche 02 Disponibles au magazin de la B.U.C. 01 CD Langues : Français ( fre)
| Catégories : |
Français - Anglais
Electronique
|
| Tags : |
Caractérisation Analyse Cellules solaires Silicium multicristallin Impurities Dislocations Multicrystalline silicon Solar cells Efficiency
الشوائب العيوب البنيوية السليسيوم متعدد البلوراتالخلايا الشمسية المردود |
| Index. décimale : |
621 Electronique |
| Résumé : |
An understanding of the comportment of defects and Impurities in multicrystalline silicon in turn leads
to a clearer picture of the limiting mechanisms in solar cells made with this promising material, and points to
possible paths for improvement. In this study a three diagnostic approach has been adopted for the
characterization of multicrystalline silicon samples, it comprises structural, chemical and electrical analysis of
the various minority diffusion length limiting defects and impurities which are responsible for the degradation of
the performances of multicrystalline silicon solar cells.
Preferential defect etching ions provided for the structural analysis. This approach was useful in
determining the nature and distribution of the structural defects. The work then focuses on chemical
characterization of impurities and the analytical tool used for this purpose were Fourier Transform Infra-red
Spectroscopy (FTIR). The results of annealing processes shown that, Rapid Thermal Annealing can dissociate
some oxygen precipitates existing in silicon material. This dissociation is accompanied by a degradation of the
bulk diffusion length. The effect of RTA on oxygen precipitation is extensively depending on the thermal history
of the material, the initial oxygen content and the existing precipitates in the material.
The above characterization tools were well complemented by electrical characterization through
Surface photovoltage (SPV) to determined minority diffusion length.
The results of PC1D modelling on multicrystalline silicon solar cells revealed that dislocations are not
the major factor that influences electrical properties of material. Impurities which were already present in the
grown material in an inactive form in particular the growth of oxygen precipitates and metallic impurities and
which have been electrically activated in an inhomogeneous distribution are also a principal source of
deterioration of polycrystalline silicon solar cells performances.
Thus there is a scope for attaining still higher efficiencies by further optimization of growth material
and cell processes to reduce reflection loss and effectively trapping the light inside the cell. |
| Diplôme : |
Doctorat en sciences |
| En ligne : |
../theses/electronique/BEN5287.pdf |
| Format de la ressource électronique : |
pdf |
| Permalink : |
index.php?lvl=notice_display&id=2774 |
|
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