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Auteur Fayssal Ynineb |
Documents disponibles écrits par cet auteur (2)
Affiner la recherche Interroger des sources externesContribution à l'élaboration de couches minces d'oxydes transparents conducteurs (TCO). / Fayssal Ynineb
Titre : Contribution à l'élaboration de couches minces d'oxydes transparents conducteurs (TCO). Type de document : texte imprimé Auteurs : Fayssal Ynineb, Auteur ; N. Attaf, Directeur de thèse Mention d'édition : 16/05/2010 Editeur : Constantine : Université Mentouri Constantine Année de publication : 2010 Importance : 104 f. Format : 30 cm. Note générale : 01 Disponible à la salle de recherche 01 Disponible au magazin de la B.U.C. 01 CD Langues : Français (fre) Catégories : Français - Anglais
PhysiqueTags : Sciences des matériaux: Semi-conducteurs DRX Résistivité électrique Couches minces TCO Spray ultrasonique Caractérisation optique Thin films TCO Ultrasonic spray Optical characterization Electrical resistivity الشرائح الرقیقة الرش فوق الصوتي الوصف الضوئي المقاومیة الكھربائیة Index. décimale : 530 Physique Résumé : Our work concerns the development and the characterization of the conducting transparent oxides thin films of: ZnO, SnO2 and In2O3, and their mixtures by the ultrasonic technique spray at 300°C.
In the first part of this thesis, we realized, in addition to pure oxides, a series of deposit containing ZnO by using the mixtures of: [ZnO:SnO2]
and [ZnO:In2O3]. In the second part, we realized another serie of oxides [SnO2:In2O3]. In the two parts we studied the influence of the rate mixture of components on the characteristics of films. These films are analyzed by various characterization techniques of materials. The structural characterization of films by analysis of the spectra of X-ray diffraction showed that the films based on the mixtures and containing ZnO present a preferential direction according to the plan (002) for the Rb1 series and (100) for the Rb2 series. In films of the series [SnO2:In2O3] the preferential orientation is along the axis (222) of In2O3. The UV-Visible spectrophotometer of these films confirms that it is possible to obtain good transparent films of TCO with a transmittance of about 75 to 85% in the visible range. The measurement of electric resistivity also confirmed the decrease of the electrical resistivity with mixtures to a value of 10-3 (Ω.cm).Note de contenu : Annexes. Diplôme : Magistère En ligne : ../theses/physique/YNI5646.pdf Format de la ressource électronique : Permalink : index.php?lvl=notice_display&id=3397 Contribution à l'élaboration de couches minces d'oxydes transparents conducteurs (TCO). [texte imprimé] / Fayssal Ynineb, Auteur ; N. Attaf, Directeur de thèse . - 16/05/2010 . - Constantine : Université Mentouri Constantine, 2010 . - 104 f. ; 30 cm.
01 Disponible à la salle de recherche 01 Disponible au magazin de la B.U.C. 01 CD
Langues : Français (fre)
Catégories : Français - Anglais
PhysiqueTags : Sciences des matériaux: Semi-conducteurs DRX Résistivité électrique Couches minces TCO Spray ultrasonique Caractérisation optique Thin films TCO Ultrasonic spray Optical characterization Electrical resistivity الشرائح الرقیقة الرش فوق الصوتي الوصف الضوئي المقاومیة الكھربائیة Index. décimale : 530 Physique Résumé : Our work concerns the development and the characterization of the conducting transparent oxides thin films of: ZnO, SnO2 and In2O3, and their mixtures by the ultrasonic technique spray at 300°C.
In the first part of this thesis, we realized, in addition to pure oxides, a series of deposit containing ZnO by using the mixtures of: [ZnO:SnO2]
and [ZnO:In2O3]. In the second part, we realized another serie of oxides [SnO2:In2O3]. In the two parts we studied the influence of the rate mixture of components on the characteristics of films. These films are analyzed by various characterization techniques of materials. The structural characterization of films by analysis of the spectra of X-ray diffraction showed that the films based on the mixtures and containing ZnO present a preferential direction according to the plan (002) for the Rb1 series and (100) for the Rb2 series. In films of the series [SnO2:In2O3] the preferential orientation is along the axis (222) of In2O3. The UV-Visible spectrophotometer of these films confirms that it is possible to obtain good transparent films of TCO with a transmittance of about 75 to 85% in the visible range. The measurement of electric resistivity also confirmed the decrease of the electrical resistivity with mixtures to a value of 10-3 (Ω.cm).Note de contenu : Annexes. Diplôme : Magistère En ligne : ../theses/physique/YNI5646.pdf Format de la ressource électronique : Permalink : index.php?lvl=notice_display&id=3397 Exemplaires (1)
Code-barres Cote Support Localisation Section Disponibilité YNI/5646 YNI/5646 Thèse Bibliothèque principale Thèses Disponible
Titre : Etude et realisation de structures a base d' oxyde de Zinc Type de document : texte imprimé Auteurs : Fayssal Ynineb, Auteur ; N. Attaf, Directeur de thèse Editeur : جامعة الإخوة منتوري قسنطينة Année de publication : 2015 Importance : 233 f. Format : 30 cm. Note générale : 2 copies imprimées disponibles
Langues : Français (fre) Catégories : Français - Anglais
PhysiqueTags : Couches minces ZnO Spray pyrolyse ultrasonique Hétéro-structure ZnO/p-Si Thin films Ultrasonic Spray Pyrolysis ZnO/p-Si hetero-structure الشرائح الرقيقة أكسيد الزنك الرش فوق الصوتي البنى الإلكترونية الهجينة Si-p/Zn Index. décimale : 530 Physique Résumé : Transparent conducting oxides (TCO) continue to attract considerable attention in terms fundamental and application, mainly because of their highly exploited properties. Special consideration was given to ZnO which is an n-type semiconductor with excellent optoelectronic properties that give it the potential to be exploited in many areas.
In this perspective, we studied in the first part of this work, the influence
of the mass concentration of the three elements (Zn, Sn and In) in ZnO- SnO2-In2O3 system on the crystal phase and optoelectronic properties of film elaborated by ultrasonic spray method. No new phase corresponds to the binary or a ternary alloy was observed. Only the phases of pure oxides coexist simultaneously in the deposited films were detected. In the light of this work, we identified the best figure of merit (~ 5.6×10-4 Ω-1 at RZI = 1/8) obtained in the elaborated films of ZnO-SnO2-In2O3 system.
In the second part, we studied effects of indium doping and substrate temperature on n-ZnO/p-Si hetero-structures. All elaborated hetero-structures behave as diodes described by the classical equation of the Anderson model, in which it may be necessary to take into account the presence of an oxide layer (SiO 2), interface states and trapping levels located side rather ZnO responsible for a tunnel current. All elaborated hetero-structures exhibit good electrical parameters comparable to those reported in literature.
Diplôme : Doctorat en sciences En ligne : ../theses/physique/YNI6816.pdf Format de la ressource électronique : Permalink : index.php?lvl=notice_display&id=10085 Etude et realisation de structures a base d' oxyde de Zinc [texte imprimé] / Fayssal Ynineb, Auteur ; N. Attaf, Directeur de thèse . - جامعة الإخوة منتوري قسنطينة, 2015 . - 233 f. ; 30 cm.
2 copies imprimées disponibles
Langues : Français (fre)
Catégories : Français - Anglais
PhysiqueTags : Couches minces ZnO Spray pyrolyse ultrasonique Hétéro-structure ZnO/p-Si Thin films Ultrasonic Spray Pyrolysis ZnO/p-Si hetero-structure الشرائح الرقيقة أكسيد الزنك الرش فوق الصوتي البنى الإلكترونية الهجينة Si-p/Zn Index. décimale : 530 Physique Résumé : Transparent conducting oxides (TCO) continue to attract considerable attention in terms fundamental and application, mainly because of their highly exploited properties. Special consideration was given to ZnO which is an n-type semiconductor with excellent optoelectronic properties that give it the potential to be exploited in many areas.
In this perspective, we studied in the first part of this work, the influence
of the mass concentration of the three elements (Zn, Sn and In) in ZnO- SnO2-In2O3 system on the crystal phase and optoelectronic properties of film elaborated by ultrasonic spray method. No new phase corresponds to the binary or a ternary alloy was observed. Only the phases of pure oxides coexist simultaneously in the deposited films were detected. In the light of this work, we identified the best figure of merit (~ 5.6×10-4 Ω-1 at RZI = 1/8) obtained in the elaborated films of ZnO-SnO2-In2O3 system.
In the second part, we studied effects of indium doping and substrate temperature on n-ZnO/p-Si hetero-structures. All elaborated hetero-structures behave as diodes described by the classical equation of the Anderson model, in which it may be necessary to take into account the presence of an oxide layer (SiO 2), interface states and trapping levels located side rather ZnO responsible for a tunnel current. All elaborated hetero-structures exhibit good electrical parameters comparable to those reported in literature.
Diplôme : Doctorat en sciences En ligne : ../theses/physique/YNI6816.pdf Format de la ressource électronique : Permalink : index.php?lvl=notice_display&id=10085 Exemplaires (1)
Code-barres Cote Support Localisation Section Disponibilité YNI/6816 YNI/6816 Thèse Bibliothèque principale Thèses Disponible
