| Titre : |
Caractérisation des états des joints de grains dans CdTe |
| Type de document : |
texte imprimé |
| Auteurs : |
Lilia Salmi ; Univ. de Constantine, Éditeur scientifique ; M.S. Ferah, Directeur de thèse |
| Année de publication : |
2006 |
| Importance : |
113 f. |
| Note générale : |
01 Disponible à la salle de recherche 02 Disponibles au magazin de la B.U.C. 01 CD |
| Langues : |
Français (fre) |
| Catégories : |
Français - Anglais
Physique
|
| Tags : |
Joint de Grains Etats d'interfaces Conductivité électriqueintragranulaire Barrière de potentiel grain boundary states of interfaces intergranular electric conductivity barrier of potential الحالات المتموضعة فاصل الحبیبتین النقل الكھربائي بین الحبیبات حاجز الكمون |
| Index. décimale : |
530 Physique |
| Résumé : |
The electronic properties of the materials semiconductors are very influenced by the presence of the residual impurities and the crystallographic defects. The grain boundaries constitute a wide class of crystallographic defect which affects seriously the yield of the electronic components by the presence of a high barrier of potential for the transport of the minority and majority carriers.
The main work achieve in this thesis concern the characterization of the states of energies which appear in the gap of CdTe semiconductor caused by the grain boundary. And this by the measurement of the three electric characteristics of the grain boundary: the current voltage characteristic, conductance- voltage characteristic and capacity- voltage characteristic the three are at various temperatures.
On the one hand, the form the electric characteristic current voltage of a grain boundary translates very well the presence of a barrier of potential to the grain boundary which is identical to a double barrier of Schottky. The evolution of this characteristic with the temperature shows a gradual rectification, and the grain boundary evolves to an ohmic behavior, in other word he will become inactive electrically. characteristics conductance- voltage and capacity- voltage confirm this behavior.
On the other hand, from the quantitative point of view, we have determine the distribution of the average density of the states of interfaces caused by the joint grain by assuming the method of developed by Seager, and by the means of characteristic current voltage. Then we have study his evolution according to the temperature. |
| Diplôme : |
Magistère |
| En ligne : |
../theses/physique/SAL4512.pdf |
| Format de la ressource électronique : |
pdf |
| Permalink : |
index.php?lvl=notice_display&id=3575 |
Caractérisation des états des joints de grains dans CdTe [texte imprimé] / Lilia Salmi ; Univ. de Constantine, Éditeur scientifique ; M.S. Ferah, Directeur de thèse . - 2006 . - 113 f. 01 Disponible à la salle de recherche 02 Disponibles au magazin de la B.U.C. 01 CD Langues : Français ( fre)
| Catégories : |
Français - Anglais
Physique
|
| Tags : |
Joint de Grains Etats d'interfaces Conductivité électriqueintragranulaire Barrière de potentiel grain boundary states of interfaces intergranular electric conductivity barrier of potential الحالات المتموضعة فاصل الحبیبتین النقل الكھربائي بین الحبیبات حاجز الكمون |
| Index. décimale : |
530 Physique |
| Résumé : |
The electronic properties of the materials semiconductors are very influenced by the presence of the residual impurities and the crystallographic defects. The grain boundaries constitute a wide class of crystallographic defect which affects seriously the yield of the electronic components by the presence of a high barrier of potential for the transport of the minority and majority carriers.
The main work achieve in this thesis concern the characterization of the states of energies which appear in the gap of CdTe semiconductor caused by the grain boundary. And this by the measurement of the three electric characteristics of the grain boundary: the current voltage characteristic, conductance- voltage characteristic and capacity- voltage characteristic the three are at various temperatures.
On the one hand, the form the electric characteristic current voltage of a grain boundary translates very well the presence of a barrier of potential to the grain boundary which is identical to a double barrier of Schottky. The evolution of this characteristic with the temperature shows a gradual rectification, and the grain boundary evolves to an ohmic behavior, in other word he will become inactive electrically. characteristics conductance- voltage and capacity- voltage confirm this behavior.
On the other hand, from the quantitative point of view, we have determine the distribution of the average density of the states of interfaces caused by the joint grain by assuming the method of developed by Seager, and by the means of characteristic current voltage. Then we have study his evolution according to the temperature. |
| Diplôme : |
Magistère |
| En ligne : |
../theses/physique/SAL4512.pdf |
| Format de la ressource électronique : |
pdf |
| Permalink : |
index.php?lvl=notice_display&id=3575 |
|
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