Titre : |
Étude des propriétés statiques et dynamiques du transistor à grille isolée mosfet |
Type de document : |
texte imprimé |
Auteurs : |
Ouassila Benzaoui, Auteur ; C. Azizi, Directeur de thèse |
Editeur : |
جامعة الإخوة منتوري قسنطينة |
Année de publication : |
2017 |
Importance : |
107 f. |
Format : |
30 cm. |
Note générale : |
2 copies imprimées disponibles
|
Langues : |
Français (fre) |
Catégories : |
Français - Anglais Physique
|
Tags : |
MOSFET Static properties Dynamic properties Characterization Simulation Propriétés statiques Propriétés dynamiques Caractérisation الخصائص السكونية الخصائص الديناميكية |
Index. décimale : |
530 Physique |
Résumé : |
This thesis deals the study of static and dynamic properties of the transistor gate isolated
MOSFET.
After having briefly recalled properties of the semiconductor material « Si », we have
presented the structure and operating principle of the MOSFET component, as well as the
physical phenomena that govern their performance.
For MOSFET transistor we have developed an analytical model of the static properties
of the component, taking into account the effect of parasitic elements and physical parameters
specific of component.
Then we studied the dynamic properties of high frequency MOSFET, and we offered an
electrical equivalent circuit diagram small signal and determined the mains dynamic
parameters.
Finally, we have concluded this work by a presentation and discussion of all the results
of the numerical simulation of static and dynamic characteristics of the MOSFET.
This study is important given the obtained results, the simplicity of mathematical
expressions, and it will be used in the study of computer-aided design “CAD” of logic and
analogical circuits based on MOSFET. |
Diplôme : |
Doctorat en sciences |
En ligne : |
../theses/physique/BEN7056.pdf |
Format de la ressource électronique : |
pdf |
Permalink : |
index.php?lvl=notice_display&id=10544 |
Étude des propriétés statiques et dynamiques du transistor à grille isolée mosfet [texte imprimé] / Ouassila Benzaoui, Auteur ; C. Azizi, Directeur de thèse . - جامعة الإخوة منتوري قسنطينة, 2017 . - 107 f. ; 30 cm. 2 copies imprimées disponibles
Langues : Français ( fre)
Catégories : |
Français - Anglais Physique
|
Tags : |
MOSFET Static properties Dynamic properties Characterization Simulation Propriétés statiques Propriétés dynamiques Caractérisation الخصائص السكونية الخصائص الديناميكية |
Index. décimale : |
530 Physique |
Résumé : |
This thesis deals the study of static and dynamic properties of the transistor gate isolated
MOSFET.
After having briefly recalled properties of the semiconductor material « Si », we have
presented the structure and operating principle of the MOSFET component, as well as the
physical phenomena that govern their performance.
For MOSFET transistor we have developed an analytical model of the static properties
of the component, taking into account the effect of parasitic elements and physical parameters
specific of component.
Then we studied the dynamic properties of high frequency MOSFET, and we offered an
electrical equivalent circuit diagram small signal and determined the mains dynamic
parameters.
Finally, we have concluded this work by a presentation and discussion of all the results
of the numerical simulation of static and dynamic characteristics of the MOSFET.
This study is important given the obtained results, the simplicity of mathematical
expressions, and it will be used in the study of computer-aided design “CAD” of logic and
analogical circuits based on MOSFET. |
Diplôme : |
Doctorat en sciences |
En ligne : |
../theses/physique/BEN7056.pdf |
Format de la ressource électronique : |
pdf |
Permalink : |
index.php?lvl=notice_display&id=10544 |
|