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Auteur Farida Hobar |
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Titre : Etude, conception et réalisation de capteurs à base de matériaux céramiques. Type de document : texte imprimé Auteurs : Ahmed Bouchekhlal, Auteur ; Farida Hobar, Directeur de thèse Editeur : جامعة الإخوة منتوري قسنطينة Année de publication : 2018 Importance : 98 f. Format : 30 cm. Note générale : 2 copies imprimées disponibles
Langues : Français (fre) Catégories : Français - Anglais
ElectroniqueTags : Varistance Coefficient de non linéarité Microstructure Propriétés électriques température de Frittage Varistor Coefficient of nonlinearity Electrical properties sintering temperature الفاريستور معامل اللاخطية المجهرية الخصائص الكهربائية حرارة التلبيد Index. décimale : 621 Electronique Résumé : Varistors are electrical components with variable resistivity depending on the electric field applied to them. These components are typically used in surge protection devices. The objectives of this work are to study the influence of the sintering temperature on the electrical properties of the material as well as to show the advantages and disadvantages compared to a conventional sintering method. To do this, zinc oxide varistors doped with Bi2O3, MnO2, Cr2O3, Sb2O3, Co3O4 and SiO2 were developed by a ceramic method and were sintered for different temperatures (1280, 1300, 1320, and 1350°c). Their characterization was done by DRX, MEB, and I (V). The samples obtained depend strongly on the production conditions (sintering temperature), the more the sintering temperature increases, the more the grain size increases. The grain size of the doped ZnO varistors obtained varies from 2.57 to 6.84 μm. The electrical characterization of these samples shows that they exhibit a non-linear behavior of varistor with a coefficient of 33.61.
In addition, the threshold field is 2991.56v / cm for the temperature of 1280 ° C. These results validate the possibility of miniaturization of varistors for their application in microelectronics.
Diplôme : Doctorat en sciences En ligne : ../theses/electronique/BOU7360.pdf Format de la ressource électronique : Permalink : https://bu.umc.edu.dz/md/index.php?lvl=notice_display&id=11009 Etude, conception et réalisation de capteurs à base de matériaux céramiques. [texte imprimé] / Ahmed Bouchekhlal, Auteur ; Farida Hobar, Directeur de thèse . - جامعة الإخوة منتوري قسنطينة, 2018 . - 98 f. ; 30 cm.
2 copies imprimées disponibles
Langues : Français (fre)
Catégories : Français - Anglais
ElectroniqueTags : Varistance Coefficient de non linéarité Microstructure Propriétés électriques température de Frittage Varistor Coefficient of nonlinearity Electrical properties sintering temperature الفاريستور معامل اللاخطية المجهرية الخصائص الكهربائية حرارة التلبيد Index. décimale : 621 Electronique Résumé : Varistors are electrical components with variable resistivity depending on the electric field applied to them. These components are typically used in surge protection devices. The objectives of this work are to study the influence of the sintering temperature on the electrical properties of the material as well as to show the advantages and disadvantages compared to a conventional sintering method. To do this, zinc oxide varistors doped with Bi2O3, MnO2, Cr2O3, Sb2O3, Co3O4 and SiO2 were developed by a ceramic method and were sintered for different temperatures (1280, 1300, 1320, and 1350°c). Their characterization was done by DRX, MEB, and I (V). The samples obtained depend strongly on the production conditions (sintering temperature), the more the sintering temperature increases, the more the grain size increases. The grain size of the doped ZnO varistors obtained varies from 2.57 to 6.84 μm. The electrical characterization of these samples shows that they exhibit a non-linear behavior of varistor with a coefficient of 33.61.
In addition, the threshold field is 2991.56v / cm for the temperature of 1280 ° C. These results validate the possibility of miniaturization of varistors for their application in microelectronics.
Diplôme : Doctorat en sciences En ligne : ../theses/electronique/BOU7360.pdf Format de la ressource électronique : Permalink : https://bu.umc.edu.dz/md/index.php?lvl=notice_display&id=11009 Exemplaires (1)
Code-barres Cote Support Localisation Section Disponibilité BOU/7360 BOU/7360 Thèse Bibliothèque principale Thèses Disponible
Titre : Étude des effets de la forte injection dans les structures bipolaires Type de document : texte imprimé Auteurs : Asma Benchiheb, Auteur ; Farida Hobar, Directeur de thèse Editeur : جامعة الإخوة منتوري قسنطينة Année de publication : 2018 Importance : 170 f. Format : 30 cm. Note générale : 2 copies imprimées disponibles
Langues : Français (fre) Catégories : Français - Anglais
ElectroniqueTags : Modélisation électrique transistor bipolaire hétérojonction technologie BICMOS défauts de
gravures joints de grains polysilicium effet quantique Electric modeling bipolar transistor heterojunction BICMOS technology etching defects polysilicon Quantum effect grain boundary نمذجة كهربائية مقحل ثنائي القطب وصلة غير متجانسة تكنولوجية BICMOSعيوب النقش حدود الحبيبات السليسيوم المتعدد البلورات التأثير الكميIndex. décimale : 621 Electronique Résumé : The purpose of thesis is the development of software capable to do a simulation of bipolar transistors taking into account both the type of component architecture, the level of carrier’s injection, the granular nature of the polysilicon forming the emitter and defects caused by the etching process of this material. To achieve this goal, we proceeded in progressive steps. First of all, we considered the classical semiconductor equations accounting for the displacement and the conservation of the carriers as well in the case of a homojunction as in the case of a heteronjunction. By the finite difference method, we have passed from the continuous case to the
discrete case by establishing at the end of this operation, a system of coupled equations whose resolution makes it possible to calculate the potential, the density of the electrons and the holes in each point of the component and also to deduce other physical quantities. This step constitutes a first ideal approach of the transistor and a comparison of the simulation results with the experimental measurements shows a rather important difference. Thus, in the second phase of the work, we proceeded to a correction of the model and this, by introducing the quantum drift diffusion model (QDDM) which take count of the quantum effects and the defects that can exist
in the bipolar transistors and which disrupt their operation very significantly. Finally, in the last
step, we used this software to simulate two types of bipolar transistors: homojunction bipolar transistor (TB-Si) and heterojunction bipolar transistor with a base containing germanium (HBT - SiGe). The two types of components belong to the same 0.35µm BICMOS-die with polysicilium emitters, but made according to two different architectures. Simulation results showed that:
the first type of transistor, TB-Si was much more affected by the presence of etching defects than the second type (HBT-SiGe),
at low and middle injection levels, the deep level-defects caused by the etching process lead to a decrease in the current gain. However, the defects present in the grain boundaries are able to limit this reduction.
At high injection levels, the electrical characteristics are very close to those obtained in the absence of defects at the interfaces.Diplôme : Doctorat en sciences En ligne : ../theses/electronique/BEN7244.pdf Format de la ressource électronique : Permalink : https://bu.umc.edu.dz/md/index.php?lvl=notice_display&id=10812 Étude des effets de la forte injection dans les structures bipolaires [texte imprimé] / Asma Benchiheb, Auteur ; Farida Hobar, Directeur de thèse . - جامعة الإخوة منتوري قسنطينة, 2018 . - 170 f. ; 30 cm.
2 copies imprimées disponibles
Langues : Français (fre)
Catégories : Français - Anglais
ElectroniqueTags : Modélisation électrique transistor bipolaire hétérojonction technologie BICMOS défauts de
gravures joints de grains polysilicium effet quantique Electric modeling bipolar transistor heterojunction BICMOS technology etching defects polysilicon Quantum effect grain boundary نمذجة كهربائية مقحل ثنائي القطب وصلة غير متجانسة تكنولوجية BICMOSعيوب النقش حدود الحبيبات السليسيوم المتعدد البلورات التأثير الكميIndex. décimale : 621 Electronique Résumé : The purpose of thesis is the development of software capable to do a simulation of bipolar transistors taking into account both the type of component architecture, the level of carrier’s injection, the granular nature of the polysilicon forming the emitter and defects caused by the etching process of this material. To achieve this goal, we proceeded in progressive steps. First of all, we considered the classical semiconductor equations accounting for the displacement and the conservation of the carriers as well in the case of a homojunction as in the case of a heteronjunction. By the finite difference method, we have passed from the continuous case to the
discrete case by establishing at the end of this operation, a system of coupled equations whose resolution makes it possible to calculate the potential, the density of the electrons and the holes in each point of the component and also to deduce other physical quantities. This step constitutes a first ideal approach of the transistor and a comparison of the simulation results with the experimental measurements shows a rather important difference. Thus, in the second phase of the work, we proceeded to a correction of the model and this, by introducing the quantum drift diffusion model (QDDM) which take count of the quantum effects and the defects that can exist
in the bipolar transistors and which disrupt their operation very significantly. Finally, in the last
step, we used this software to simulate two types of bipolar transistors: homojunction bipolar transistor (TB-Si) and heterojunction bipolar transistor with a base containing germanium (HBT - SiGe). The two types of components belong to the same 0.35µm BICMOS-die with polysicilium emitters, but made according to two different architectures. Simulation results showed that:
the first type of transistor, TB-Si was much more affected by the presence of etching defects than the second type (HBT-SiGe),
at low and middle injection levels, the deep level-defects caused by the etching process lead to a decrease in the current gain. However, the defects present in the grain boundaries are able to limit this reduction.
At high injection levels, the electrical characteristics are very close to those obtained in the absence of defects at the interfaces.Diplôme : Doctorat en sciences En ligne : ../theses/electronique/BEN7244.pdf Format de la ressource électronique : Permalink : https://bu.umc.edu.dz/md/index.php?lvl=notice_display&id=10812 Exemplaires (1)
Code-barres Cote Support Localisation Section Disponibilité BEN/7244 BEN/7244 Thèse Bibliothèque principale Thèses Disponible
Titre : Étude, élaboration et caractérisation de céramiques piézoélectriques Type de document : texte imprimé Auteurs : Hamza Lidjici, Auteur ; Farida Hobar, Directeur de thèse Editeur : Constantine : Université Mentouri Constantine Année de publication : 2011 Importance : 117 f. Format : 31 cm Note générale : Doctorat en Sciences
2 copies imprimées disponiblesLangues : Français (fre) Catégories : Français - Anglais
ElectroniqueTags : Céramiques piézoélectriques sans plomb Na0 5Bi0 5TiO3-BaTiO3 zone de transformation morphotropique (MPB) Propriétés diélectriques et électromécaniques. Index. décimale : 621 Electronique Diplôme : Doctorat en sciences En ligne : ../theses/electronique/LID5979.pdf Format de la ressource électronique : Permalink : https://bu.umc.edu.dz/md/index.php?lvl=notice_display&id=5899 Étude, élaboration et caractérisation de céramiques piézoélectriques [texte imprimé] / Hamza Lidjici, Auteur ; Farida Hobar, Directeur de thèse . - Constantine : Université Mentouri Constantine, 2011 . - 117 f. ; 31 cm.
Doctorat en Sciences
2 copies imprimées disponibles
Langues : Français (fre)
Catégories : Français - Anglais
ElectroniqueTags : Céramiques piézoélectriques sans plomb Na0 5Bi0 5TiO3-BaTiO3 zone de transformation morphotropique (MPB) Propriétés diélectriques et électromécaniques. Index. décimale : 621 Electronique Diplôme : Doctorat en sciences En ligne : ../theses/electronique/LID5979.pdf Format de la ressource électronique : Permalink : https://bu.umc.edu.dz/md/index.php?lvl=notice_display&id=5899 Exemplaires (1)
Code-barres Cote Support Localisation Section Disponibilité LID/5979 LID/5979 Thèse Bibliothèque principale Thèses Disponible
Titre : Étude de microcavités à base de cristaux photoniques : Application aux capteurs RI à haute sensibilité. Type de document : texte imprimé Auteurs : Merzoug Ammari, Auteur ; Farida Hobar, Directeur de thèse Editeur : جامعة الإخوة منتوري قسنطينة Année de publication : 2018 Importance : 96 f. Format : 30 cm. Note générale : 2 copies imprimées disponibles
Langues : Français (fre) Catégories : Français - Anglais
ElectroniqueTags : Cristaux photoniques Microcavités Capteurs à indice de réfraction Facteur de
qualité Photonic crystal Microcavity Refractive index sensors Quality factor FDTD البلورات الضوئية استشعار انكسار فجوة عامل جودةIndex. décimale : 621 Electronique Résumé : In recent years, various devices based on Photonic Crystal material are designed and
fabricated such as Multiplexers, Filters and Sensors etc. Optical Sensors based on a Photonic principle have also a wide range of applications in the field of health care, defense, security, automotive, aerospace, environment and food quality control.
Photonic crystals with one-and two-dimensional have been studied for a variety of refractive index sensing applications. In this work, we propose a new design principle of two-dimensional photonic crystal (PC) refractive index sensors with high transmission and sensitivity simultaneously. The proposed sensor is made of two waveguide couplers and one microcavity which is obtained by varying the radius of one air hole in the center of PC structure. The microcavity is separated from the input and output waveguides by many holes of the PC. It is shown that by injecting an analyte such as gas or a liquid into a sensing hole, and thus changing its refractive index, a shift in the resonant wavelength may occur. The transmission spectra, quality factor and sensitivity of the sensor have been analyzed numerically through the finite
difference time domain (FDTD) method. The sensitivity value of the sensor has been found to be 668 nm/RIU with minimum detection limit of 0.0002 RIU, which proves the ability of the structure to produce biosensor PCDiplôme : Doctorat en sciences En ligne : ../theses/electronique/AMM7484.pdf Format de la ressource électronique : Permalink : https://bu.umc.edu.dz/md/index.php?lvl=notice_display&id=11316 Étude de microcavités à base de cristaux photoniques : Application aux capteurs RI à haute sensibilité. [texte imprimé] / Merzoug Ammari, Auteur ; Farida Hobar, Directeur de thèse . - جامعة الإخوة منتوري قسنطينة, 2018 . - 96 f. ; 30 cm.
2 copies imprimées disponibles
Langues : Français (fre)
Catégories : Français - Anglais
ElectroniqueTags : Cristaux photoniques Microcavités Capteurs à indice de réfraction Facteur de
qualité Photonic crystal Microcavity Refractive index sensors Quality factor FDTD البلورات الضوئية استشعار انكسار فجوة عامل جودةIndex. décimale : 621 Electronique Résumé : In recent years, various devices based on Photonic Crystal material are designed and
fabricated such as Multiplexers, Filters and Sensors etc. Optical Sensors based on a Photonic principle have also a wide range of applications in the field of health care, defense, security, automotive, aerospace, environment and food quality control.
Photonic crystals with one-and two-dimensional have been studied for a variety of refractive index sensing applications. In this work, we propose a new design principle of two-dimensional photonic crystal (PC) refractive index sensors with high transmission and sensitivity simultaneously. The proposed sensor is made of two waveguide couplers and one microcavity which is obtained by varying the radius of one air hole in the center of PC structure. The microcavity is separated from the input and output waveguides by many holes of the PC. It is shown that by injecting an analyte such as gas or a liquid into a sensing hole, and thus changing its refractive index, a shift in the resonant wavelength may occur. The transmission spectra, quality factor and sensitivity of the sensor have been analyzed numerically through the finite
difference time domain (FDTD) method. The sensitivity value of the sensor has been found to be 668 nm/RIU with minimum detection limit of 0.0002 RIU, which proves the ability of the structure to produce biosensor PCDiplôme : Doctorat en sciences En ligne : ../theses/electronique/AMM7484.pdf Format de la ressource électronique : Permalink : https://bu.umc.edu.dz/md/index.php?lvl=notice_display&id=11316 Exemplaires (1)
Code-barres Cote Support Localisation Section Disponibilité AMM/7484 AMM/7484 Thèse Bibliothèque principale Thèses Disponible
Titre : Etude et modélisation de différents types de photodétecteurs rapides Type de document : texte imprimé Auteurs : Sabah Benzeghda, Auteur ; Farida Hobar, Directeur de thèse ; Didier Decoster, Directeur de thèse Editeur : جامعة الإخوة منتوري قسنطينة Année de publication : 2017 Importance : 121 f. Format : 30 cm. Note générale : 2 copies imprimées disponibles
Langues : Français (fre) Catégories : Français - Anglais
ElectroniqueTags : modélisation photodétecteurs Microsystème et instrumentation Les photo-interrupteurs Métal-Semiconducteur-Métal
(MSM)Index. décimale : 621 Electronique Résumé : As symmetrical data characteristics I (V) of the Metal-Semiconductor-Metal (MSM) photodetector, we
wondered how this device can be used as a photoswitch as well as the low temperature on GaAs
photoconductive generally used for this purpose. The impulse response of interdigitated metalsemiconductor- metal photoswich fabricated on GaAs non-intentional doped (NID) absorbing layer is
investigated. The impulse response of GaAs MSM photoswitch for different bias voltage and optical power
and gap between fingers, for λ=780nm was studied experimentally. The pulse shape of the impulse
response is similar, it achieves maximum after fast rise time due to fast electron drift velocity, flowed by
fairly fast decay corresponding to the fast escape of electrons and holes to the interdigitated contacts,
small Schottky contact spacing permitting rapid carrier extraction after photoexcitation, however, it
followed by long tail. High electric field reaches a threshold level, the mobility of electrons decrease as the
electric field is increased, due to the screening of internal field; thereby producing negative resistance
(NDR). The trapping effect is another feasible way to reduce the carrier transit time. It is advantageous to
use thin active layers to reduce the transient response.Diplôme : Doctorat en sciences En ligne : ../theses/electronique/BEN7122.pdf Format de la ressource électronique : Permalink : https://bu.umc.edu.dz/md/index.php?lvl=notice_display&id=10480 Etude et modélisation de différents types de photodétecteurs rapides [texte imprimé] / Sabah Benzeghda, Auteur ; Farida Hobar, Directeur de thèse ; Didier Decoster, Directeur de thèse . - جامعة الإخوة منتوري قسنطينة, 2017 . - 121 f. ; 30 cm.
2 copies imprimées disponibles
Langues : Français (fre)
Catégories : Français - Anglais
ElectroniqueTags : modélisation photodétecteurs Microsystème et instrumentation Les photo-interrupteurs Métal-Semiconducteur-Métal
(MSM)Index. décimale : 621 Electronique Résumé : As symmetrical data characteristics I (V) of the Metal-Semiconductor-Metal (MSM) photodetector, we
wondered how this device can be used as a photoswitch as well as the low temperature on GaAs
photoconductive generally used for this purpose. The impulse response of interdigitated metalsemiconductor- metal photoswich fabricated on GaAs non-intentional doped (NID) absorbing layer is
investigated. The impulse response of GaAs MSM photoswitch for different bias voltage and optical power
and gap between fingers, for λ=780nm was studied experimentally. The pulse shape of the impulse
response is similar, it achieves maximum after fast rise time due to fast electron drift velocity, flowed by
fairly fast decay corresponding to the fast escape of electrons and holes to the interdigitated contacts,
small Schottky contact spacing permitting rapid carrier extraction after photoexcitation, however, it
followed by long tail. High electric field reaches a threshold level, the mobility of electrons decrease as the
electric field is increased, due to the screening of internal field; thereby producing negative resistance
(NDR). The trapping effect is another feasible way to reduce the carrier transit time. It is advantageous to
use thin active layers to reduce the transient response.Diplôme : Doctorat en sciences En ligne : ../theses/electronique/BEN7122.pdf Format de la ressource électronique : Permalink : https://bu.umc.edu.dz/md/index.php?lvl=notice_display&id=10480 Exemplaires (1)
Code-barres Cote Support Localisation Section Disponibilité BEN/7122 BEN/7122 Thèse Bibliothèque principale Thèses Disponible PermalinkPermalinkPermalinkEtude et simulation de phénomènes électro-optique dans les guides d'ondes silicium sur simox / Chahrazad Dridi
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