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Titre : Déposition et étude des couches pérovskites pour le photovoltaïque. Type de document : texte imprimé Auteurs : Itidel Belaidi, Auteur ; Nadhir Attaf, Directeur de thèse ; Fatima Khelfaoui, Directeur de thèse Mention d'édition : 07/07/2021 Editeur : جامعة الإخوة منتوري قسنطينة Année de publication : 2021 Importance : 175 f. Format : 30 cm. Note générale : Doctorat 3éme CYCLE LMD.
1 copies imprimées disponibles
Langues : Français (fre) Catégories : Français - Anglais
PhysiqueTags : pérovskites organiques-inorganiques cellules solaires photovoltaïque hétérojonction perovskite organic-inorganic photovoltaic heterojunction البيروفسكايت الخلايا العضوية غير العضوية الخلايا الشمسية الخلايا الكهروضوئية غير المتجانسة Index. décimale : 530 Physique Résumé :
In recent years, hybrid organic-inorganic perovskites have emerged as a new class of semiconductors with very interesting optoelectronic properties for photovoltaic devices. This thesis focuses on the deposition of CH3NH3PbI3 perovskite materials by spin-coating on glass substrates. The effects of the nature of the solvent and the speed of rotation on the morphology of the films and the structure are studied. Two solvents are used:N, N-dimethylformamide (DMF) and a mixture of dimethylsulfoxide (DMSO) with DMF. The rotation speed varies between 700 and 2000 rpm.Scanning electron microscopy (SEM) observations indicate that the films prepared are not continuous with varying morphologies; the films are formed of elongated fibers. The structural characterization of the films revealed that the latter have a tetragonal structure of the prepared perovskite with a preferential orientation towards (110). The optical and electrical characterizations have shown that the CH3NH3PbI3 films deposited by spin coating have good optoelectronic properties. good absorbance in the visible range with an optical gap equal to1.54eV. The electrical characterizations have shown that the CH3NH3PbI3 films prepared are resistive; the thin layers of CH3NH3PbI3 turn out to be very sensitive to several factors: humidity, oxygen, light irradiation, On the other hand, the study of the heterojunction was made by the IV and CV techniques which made it possible to determine the electrical parameters heterojunction.
Note de contenu : Annexes. Diplôme : Doctorat En ligne : ../theses/physique/BEL7831.pdf Format de la ressource électronique : Permalink : index.php?lvl=notice_display&id=11663 Déposition et étude des couches pérovskites pour le photovoltaïque. [texte imprimé] / Itidel Belaidi, Auteur ; Nadhir Attaf, Directeur de thèse ; Fatima Khelfaoui, Directeur de thèse . - 07/07/2021 . - جامعة الإخوة منتوري قسنطينة, 2021 . - 175 f. ; 30 cm.
Doctorat 3éme CYCLE LMD.
1 copies imprimées disponibles
Langues : Français (fre)
Catégories : Français - Anglais
PhysiqueTags : pérovskites organiques-inorganiques cellules solaires photovoltaïque hétérojonction perovskite organic-inorganic photovoltaic heterojunction البيروفسكايت الخلايا العضوية غير العضوية الخلايا الشمسية الخلايا الكهروضوئية غير المتجانسة Index. décimale : 530 Physique Résumé :
In recent years, hybrid organic-inorganic perovskites have emerged as a new class of semiconductors with very interesting optoelectronic properties for photovoltaic devices. This thesis focuses on the deposition of CH3NH3PbI3 perovskite materials by spin-coating on glass substrates. The effects of the nature of the solvent and the speed of rotation on the morphology of the films and the structure are studied. Two solvents are used:N, N-dimethylformamide (DMF) and a mixture of dimethylsulfoxide (DMSO) with DMF. The rotation speed varies between 700 and 2000 rpm.Scanning electron microscopy (SEM) observations indicate that the films prepared are not continuous with varying morphologies; the films are formed of elongated fibers. The structural characterization of the films revealed that the latter have a tetragonal structure of the prepared perovskite with a preferential orientation towards (110). The optical and electrical characterizations have shown that the CH3NH3PbI3 films deposited by spin coating have good optoelectronic properties. good absorbance in the visible range with an optical gap equal to1.54eV. The electrical characterizations have shown that the CH3NH3PbI3 films prepared are resistive; the thin layers of CH3NH3PbI3 turn out to be very sensitive to several factors: humidity, oxygen, light irradiation, On the other hand, the study of the heterojunction was made by the IV and CV techniques which made it possible to determine the electrical parameters heterojunction.
Note de contenu : Annexes. Diplôme : Doctorat En ligne : ../theses/physique/BEL7831.pdf Format de la ressource électronique : Permalink : index.php?lvl=notice_display&id=11663 Exemplaires (1)
Code-barres Cote Support Localisation Section Disponibilité BEL/7831 BEL/7831 Thèse Bibliothèque principale Thèses Disponible
Titre : Étude des effets de la forte injection dans les structures bipolaires Type de document : texte imprimé Auteurs : Asma Benchiheb, Auteur ; Farida Hobar, Directeur de thèse Editeur : جامعة الإخوة منتوري قسنطينة Année de publication : 2018 Importance : 170 f. Format : 30 cm. Note générale : 2 copies imprimées disponibles
Langues : Français (fre) Catégories : Français - Anglais
ElectroniqueTags : Modélisation électrique transistor bipolaire hétérojonction technologie BICMOS défauts de
gravures joints de grains polysilicium effet quantique Electric modeling bipolar transistor heterojunction BICMOS technology etching defects polysilicon Quantum effect grain boundary نمذجة كهربائية مقحل ثنائي القطب وصلة غير متجانسة تكنولوجية BICMOSعيوب النقش حدود الحبيبات السليسيوم المتعدد البلورات التأثير الكميIndex. décimale : 621 Electronique Résumé : The purpose of thesis is the development of software capable to do a simulation of bipolar transistors taking into account both the type of component architecture, the level of carrier’s injection, the granular nature of the polysilicon forming the emitter and defects caused by the etching process of this material. To achieve this goal, we proceeded in progressive steps. First of all, we considered the classical semiconductor equations accounting for the displacement and the conservation of the carriers as well in the case of a homojunction as in the case of a heteronjunction. By the finite difference method, we have passed from the continuous case to the
discrete case by establishing at the end of this operation, a system of coupled equations whose resolution makes it possible to calculate the potential, the density of the electrons and the holes in each point of the component and also to deduce other physical quantities. This step constitutes a first ideal approach of the transistor and a comparison of the simulation results with the experimental measurements shows a rather important difference. Thus, in the second phase of the work, we proceeded to a correction of the model and this, by introducing the quantum drift diffusion model (QDDM) which take count of the quantum effects and the defects that can exist
in the bipolar transistors and which disrupt their operation very significantly. Finally, in the last
step, we used this software to simulate two types of bipolar transistors: homojunction bipolar transistor (TB-Si) and heterojunction bipolar transistor with a base containing germanium (HBT - SiGe). The two types of components belong to the same 0.35µm BICMOS-die with polysicilium emitters, but made according to two different architectures. Simulation results showed that:
the first type of transistor, TB-Si was much more affected by the presence of etching defects than the second type (HBT-SiGe),
at low and middle injection levels, the deep level-defects caused by the etching process lead to a decrease in the current gain. However, the defects present in the grain boundaries are able to limit this reduction.
At high injection levels, the electrical characteristics are very close to those obtained in the absence of defects at the interfaces.Diplôme : Doctorat en sciences En ligne : ../theses/electronique/BEN7244.pdf Format de la ressource électronique : Permalink : index.php?lvl=notice_display&id=10812 Étude des effets de la forte injection dans les structures bipolaires [texte imprimé] / Asma Benchiheb, Auteur ; Farida Hobar, Directeur de thèse . - جامعة الإخوة منتوري قسنطينة, 2018 . - 170 f. ; 30 cm.
2 copies imprimées disponibles
Langues : Français (fre)
Catégories : Français - Anglais
ElectroniqueTags : Modélisation électrique transistor bipolaire hétérojonction technologie BICMOS défauts de
gravures joints de grains polysilicium effet quantique Electric modeling bipolar transistor heterojunction BICMOS technology etching defects polysilicon Quantum effect grain boundary نمذجة كهربائية مقحل ثنائي القطب وصلة غير متجانسة تكنولوجية BICMOSعيوب النقش حدود الحبيبات السليسيوم المتعدد البلورات التأثير الكميIndex. décimale : 621 Electronique Résumé : The purpose of thesis is the development of software capable to do a simulation of bipolar transistors taking into account both the type of component architecture, the level of carrier’s injection, the granular nature of the polysilicon forming the emitter and defects caused by the etching process of this material. To achieve this goal, we proceeded in progressive steps. First of all, we considered the classical semiconductor equations accounting for the displacement and the conservation of the carriers as well in the case of a homojunction as in the case of a heteronjunction. By the finite difference method, we have passed from the continuous case to the
discrete case by establishing at the end of this operation, a system of coupled equations whose resolution makes it possible to calculate the potential, the density of the electrons and the holes in each point of the component and also to deduce other physical quantities. This step constitutes a first ideal approach of the transistor and a comparison of the simulation results with the experimental measurements shows a rather important difference. Thus, in the second phase of the work, we proceeded to a correction of the model and this, by introducing the quantum drift diffusion model (QDDM) which take count of the quantum effects and the defects that can exist
in the bipolar transistors and which disrupt their operation very significantly. Finally, in the last
step, we used this software to simulate two types of bipolar transistors: homojunction bipolar transistor (TB-Si) and heterojunction bipolar transistor with a base containing germanium (HBT - SiGe). The two types of components belong to the same 0.35µm BICMOS-die with polysicilium emitters, but made according to two different architectures. Simulation results showed that:
the first type of transistor, TB-Si was much more affected by the presence of etching defects than the second type (HBT-SiGe),
at low and middle injection levels, the deep level-defects caused by the etching process lead to a decrease in the current gain. However, the defects present in the grain boundaries are able to limit this reduction.
At high injection levels, the electrical characteristics are very close to those obtained in the absence of defects at the interfaces.Diplôme : Doctorat en sciences En ligne : ../theses/electronique/BEN7244.pdf Format de la ressource électronique : Permalink : index.php?lvl=notice_display&id=10812 Exemplaires (1)
Code-barres Cote Support Localisation Section Disponibilité BEN/7244 BEN/7244 Thèse Bibliothèque principale Thèses Disponible
Titre : Modélisation d’une cellule solaire à puits quantique en GaAs/AlGaAs Type de document : texte imprimé Auteurs : Badreddine Mamri, Auteur ; Mimia Marir-benabbas, Directeur de thèse Editeur : constantine [Algérie] : Université Constantine 1 Année de publication : 2014 Importance : 97 f. Format : 30 cm. Note générale : 2 copies imprimées disponibles Langues : Français (fre) Catégories : Français - Anglais
ElectroniqueTags : quantum well heterojunction solar cell with heterojunction Ga.As، ALGaAs puits quantique hétérojonction cellules solaires quantiques الحفر الكوانتیكیة خلیة شمسیة ذات طبقات متعددة و مختلفة الخلایا الشمسیة الكوانتیكیة Index. décimale : 621 Electronique Résumé : The greatest challenge of the researchers being interested in the renewable environment and energies is to carry out a good output /price on the solar generators in particular in die statement With regard to the third generation of solar cells, the quantum solar cells represent the response to many interrogations.
The work of our thesis related to modeling of a solar cell with heterojunction, with quantum well containing the arsenic of galium GaAs to notched joints of the AlGaAs window. The goal and to determine characteristic I (V) of the cell, the influence of the parameters physical and geometrical on the output of conversion especially the density of the electrons in the quantum well and to profit from electronics qualities and physics as of these two materials, a current of short circuit, a tension of open circuit and a close absorption will infra it red better.Diplôme : Magistère En ligne : ../theses/electronique/MAM6477.pdf Format de la ressource électronique : Permalink : index.php?lvl=notice_display&id=9522 Modélisation d’une cellule solaire à puits quantique en GaAs/AlGaAs [texte imprimé] / Badreddine Mamri, Auteur ; Mimia Marir-benabbas, Directeur de thèse . - constantine [Algérie] : Université Constantine 1, 2014 . - 97 f. ; 30 cm.
2 copies imprimées disponibles
Langues : Français (fre)
Catégories : Français - Anglais
ElectroniqueTags : quantum well heterojunction solar cell with heterojunction Ga.As، ALGaAs puits quantique hétérojonction cellules solaires quantiques الحفر الكوانتیكیة خلیة شمسیة ذات طبقات متعددة و مختلفة الخلایا الشمسیة الكوانتیكیة Index. décimale : 621 Electronique Résumé : The greatest challenge of the researchers being interested in the renewable environment and energies is to carry out a good output /price on the solar generators in particular in die statement With regard to the third generation of solar cells, the quantum solar cells represent the response to many interrogations.
The work of our thesis related to modeling of a solar cell with heterojunction, with quantum well containing the arsenic of galium GaAs to notched joints of the AlGaAs window. The goal and to determine characteristic I (V) of the cell, the influence of the parameters physical and geometrical on the output of conversion especially the density of the electrons in the quantum well and to profit from electronics qualities and physics as of these two materials, a current of short circuit, a tension of open circuit and a close absorption will infra it red better.Diplôme : Magistère En ligne : ../theses/electronique/MAM6477.pdf Format de la ressource électronique : Permalink : index.php?lvl=notice_display&id=9522 Exemplaires (1)
Code-barres Cote Support Localisation Section Disponibilité MAM/6477 MAM/6477 Thèse Bibliothèque principale Thèses Disponible Documents numériques
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