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Auteur salah Kemouche |
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Titre : Etude et simulation d’un micro capteur de pression avec électronique associée : PFET. Type de document : texte imprimé Auteurs : salah Kemouche, Auteur ; Fouad Kerrour, Directeur de thèse Mention d'édition : 03/03/2020 Editeur : جامعة الإخوة منتوري قسنطينة Année de publication : 2020 Importance : 131 f. Format : 30 cm. Note générale : 1 copies imprimées disponibles
Langues : Français (fre) Catégories : Français - Anglais
ElectroniqueTags : Electronique: Microélectronique et Instrumentation Capteur de pression à effet de champ CMOS-MEMS Modélisation Optimisation Sensibilité COMSOL FET pressure sensor Modeling Optimization Sensibility COMSOL software جهاز استشعار الضغط النمذجة التحسين الحساسية برامج
COMSOLIndex. décimale : 621 Electronique Résumé :
These days, most of the sensors are ‘smart’ in nature. In such sensors, the sensing elements and associated electronics are integrated on the same chip. This work is focusing on the study and simulation of a micro pressure sensor with associated electronics. This new pressure Sensor Field Effect Transistor PSFET shows some significant advantages such as the output signal (voltage or current). Furthermore, the full compatibility with complementary metal oxide semiconductor (CMOS) technology features to evolve to an intelligent sensor. We have begun our work with a bibliographic study on the state of the art of the pressure sensor device and the various methods of manufacturing of this sensor. The core of this study is the modeling and simulation of Pressure Sensor Based on suspended gate MOSFET; we have developed an analytical model describing the behavior of the sensor. We have investigated several membrane shapes and for different dielectric structures of the suspended gate. Finite element method based COMSOL is used to simulate the behavior of the PSFET pressure sensor. The results show that this type of pressure sensors has a non-linear response and high sensitivity with very small dimensions. We have investigated on the influence of the geometric shape of the membrane, dimensions and type of MOSET on the drain current and on the pressure sensitivity. This study allows us to optimize the sensor performance in function to the application for which it is dedicated. The response of the PSFET pressure sensor based on piezoelectric transistor as a function of pressure was determined in the last chapter. This sensor can be used to measure the air overpressure, due to his linear response in a high-pressure range.
Diplôme : Doctorat en sciences En ligne : ../theses/electronique/KEM7627.pdf Format de la ressource électronique : Permalink : index.php?lvl=notice_display&id=11463 Etude et simulation d’un micro capteur de pression avec électronique associée : PFET. [texte imprimé] / salah Kemouche, Auteur ; Fouad Kerrour, Directeur de thèse . - 03/03/2020 . - جامعة الإخوة منتوري قسنطينة, 2020 . - 131 f. ; 30 cm.
1 copies imprimées disponibles
Langues : Français (fre)
Catégories : Français - Anglais
ElectroniqueTags : Electronique: Microélectronique et Instrumentation Capteur de pression à effet de champ CMOS-MEMS Modélisation Optimisation Sensibilité COMSOL FET pressure sensor Modeling Optimization Sensibility COMSOL software جهاز استشعار الضغط النمذجة التحسين الحساسية برامج
COMSOLIndex. décimale : 621 Electronique Résumé :
These days, most of the sensors are ‘smart’ in nature. In such sensors, the sensing elements and associated electronics are integrated on the same chip. This work is focusing on the study and simulation of a micro pressure sensor with associated electronics. This new pressure Sensor Field Effect Transistor PSFET shows some significant advantages such as the output signal (voltage or current). Furthermore, the full compatibility with complementary metal oxide semiconductor (CMOS) technology features to evolve to an intelligent sensor. We have begun our work with a bibliographic study on the state of the art of the pressure sensor device and the various methods of manufacturing of this sensor. The core of this study is the modeling and simulation of Pressure Sensor Based on suspended gate MOSFET; we have developed an analytical model describing the behavior of the sensor. We have investigated several membrane shapes and for different dielectric structures of the suspended gate. Finite element method based COMSOL is used to simulate the behavior of the PSFET pressure sensor. The results show that this type of pressure sensors has a non-linear response and high sensitivity with very small dimensions. We have investigated on the influence of the geometric shape of the membrane, dimensions and type of MOSET on the drain current and on the pressure sensitivity. This study allows us to optimize the sensor performance in function to the application for which it is dedicated. The response of the PSFET pressure sensor based on piezoelectric transistor as a function of pressure was determined in the last chapter. This sensor can be used to measure the air overpressure, due to his linear response in a high-pressure range.
Diplôme : Doctorat en sciences En ligne : ../theses/electronique/KEM7627.pdf Format de la ressource électronique : Permalink : index.php?lvl=notice_display&id=11463 Exemplaires (1)
Code-barres Cote Support Localisation Section Disponibilité KEM/7627 KEM/7627 Thèse Bibliothèque principale Thèses Disponible Simulation Thermomécanique de Capteurs de Pression au silicium Pour des Applications Biomédicales / salah Kemouche
Titre : Simulation Thermomécanique de Capteurs de Pression au silicium Pour des Applications Biomédicales Type de document : texte imprimé Auteurs : salah Kemouche, Auteur ; Fouad Kerrour, Directeur de thèse Editeur : constantine [Algérie] : Université Constantine 1 Année de publication : 2014 Importance : 95 f. Format : 30 cm. Note générale : 2 copies imprimées disponibles
Langues : Français (fre) Catégories : Français - Anglais
ElectroniqueTags : "Capteur de pression au silicium, Capacitif, Piézorésistif, Membrane,
Sensibilité, pression plantaire,"
"Silicon pressure sensor, capacitive, piezoresistive, diaphragm, sensitivity,
plantar pressure."
"جهاز استشعار الضغط , سعت , بييسوهماوهيت , الحراريت الويكا يًكيت , الحساسيت , السليكىى , اىخطب قٍبث
.MATLAB – Simulink و COMSOL Multiphysique , اىطب تٍ
"Index. décimale : 621 Electronique Résumé : "This memoire aims to study the Thermo-Mechanical Behavior of Silicon Pressure
Sensors for Biomedical Applications. Even though the main function of silicon
pressure sensors stays the same for several years, the optimization of sensors for a
given application still always puzzling step.
The first chapter provides a general view of the silicon pressure sensors, in addition to
the main function and the theoretical model of the capacitive and piezoresistive
response.
In the second chapter, a 3D model in COMSOL Multi-physics environment is
established with an integral structure of the capacitive pressure sensor of the circular
diaphragm form by using the Silicon/Pyrex technology. The simulation results show
that the temperature sensitivity does not depend on the substrate thickness, but
depends on the welding width, the thickness of the diaphragm, the thickness of the
cavity and the form of the fixed support.
The response of the piezoresistive silicon pressure sensor based on the pressure and
the temperature and it is determined in the third chapter. Despite of their many
advantages, high accuracy, low non linearity, the piezoresistive pressure sensors are
extremely sensitive to temperature.
A system for measuring plantar pressure is studied in the fourth chapter. The system
is realized through coupling COMSOL Multiphysics and MATLAB-Simulink. This
system presents the advantage the simplicity of the conception and the low cost in
comparison with devices available in markets"
Diplôme : Magistère En ligne : ../theses/electronique/KEM6516.pdf Format de la ressource électronique : Permalink : index.php?lvl=notice_display&id=9630 Simulation Thermomécanique de Capteurs de Pression au silicium Pour des Applications Biomédicales [texte imprimé] / salah Kemouche, Auteur ; Fouad Kerrour, Directeur de thèse . - constantine [Algérie] : Université Constantine 1, 2014 . - 95 f. ; 30 cm.
2 copies imprimées disponibles
Langues : Français (fre)
Catégories : Français - Anglais
ElectroniqueTags : "Capteur de pression au silicium, Capacitif, Piézorésistif, Membrane,
Sensibilité, pression plantaire,"
"Silicon pressure sensor, capacitive, piezoresistive, diaphragm, sensitivity,
plantar pressure."
"جهاز استشعار الضغط , سعت , بييسوهماوهيت , الحراريت الويكا يًكيت , الحساسيت , السليكىى , اىخطب قٍبث
.MATLAB – Simulink و COMSOL Multiphysique , اىطب تٍ
"Index. décimale : 621 Electronique Résumé : "This memoire aims to study the Thermo-Mechanical Behavior of Silicon Pressure
Sensors for Biomedical Applications. Even though the main function of silicon
pressure sensors stays the same for several years, the optimization of sensors for a
given application still always puzzling step.
The first chapter provides a general view of the silicon pressure sensors, in addition to
the main function and the theoretical model of the capacitive and piezoresistive
response.
In the second chapter, a 3D model in COMSOL Multi-physics environment is
established with an integral structure of the capacitive pressure sensor of the circular
diaphragm form by using the Silicon/Pyrex technology. The simulation results show
that the temperature sensitivity does not depend on the substrate thickness, but
depends on the welding width, the thickness of the diaphragm, the thickness of the
cavity and the form of the fixed support.
The response of the piezoresistive silicon pressure sensor based on the pressure and
the temperature and it is determined in the third chapter. Despite of their many
advantages, high accuracy, low non linearity, the piezoresistive pressure sensors are
extremely sensitive to temperature.
A system for measuring plantar pressure is studied in the fourth chapter. The system
is realized through coupling COMSOL Multiphysics and MATLAB-Simulink. This
system presents the advantage the simplicity of the conception and the low cost in
comparison with devices available in markets"
Diplôme : Magistère En ligne : ../theses/electronique/KEM6516.pdf Format de la ressource électronique : Permalink : index.php?lvl=notice_display&id=9630 Exemplaires (1)
Code-barres Cote Support Localisation Section Disponibilité KEM/6516 KEM/6516 Thèse Bibliothèque principale Thèses Disponible
