Détail de l'auteur
Auteur Azzedine Telia |
Documents disponibles écrits par cet auteur (5)
Affiner la recherche Interroger des sources externesElaboration et caractérisation des matériaux en couches minces d’oxydes de zinc pour applications capteurs / Salah Ghanem
Titre : Elaboration et caractérisation des matériaux en couches minces d’oxydes de zinc pour applications capteurs Type de document : texte imprimé Auteurs : Salah Ghanem, Auteur ; Azzedine Telia, Directeur de thèse Editeur : جامعة الإخوة منتوري قسنطينة Année de publication : 2016 Importance : 115 f. Format : 30 cm. Note générale : 2 copies imprimées disponibles
Langues : Français (fre) Catégories : Français - Anglais
ElectroniqueTags : ZnO dipcoating spin coating Capteur humidité Capteur de gaz humidity sensor gaz sensor أكسيد الزنك الطلاء بالغمس الطلاء بالتدوير ملقط الرطوبة ملقط الغاز Index. décimale : 621 Electronique Résumé :
This work focuses on the study, development and characterization of thin film materials based on zinc oxide for use sensing application. Those films were elaborated using sol gel technique associated to dip and spin coating. At first it sets out general notions about gas sensing and the different types of chemical sensors based on metal oxide. A presentation of the sol-gel process will
be discussed. The Properties of gas and humidity sensing of ZnO thin films will be dealt with illustrations and discussions of surface phenomena. The mounting manipulations ensuring filing procedures and The steps of developing thin film ZnO include all phases of preparation will be exhibited. After the phase of the preparation, characterization were performed on the samples of pure and Sn doped ZnO.A comparative study has been carried out between films elaborated by
spincoating and films elaborated by . For the tests of relative humidity both sensors show an obvious change in the impedance with respect to Rh%. The effect of the operating temperature was also studied. The Sn doping effect on ZnO films was also studied. Characterisation XRD showedthat the intensity of the XRD peaks decreases with increasing concentrations of Sn.AFM images showed that the surface morphologies of the films are dependent on dopant concentration.To study
the properties of the reaction of the sensor based on ZnO films to humidity and volatile gas of ethanol. we investigated the change in sensor resistance at different relative humidity environments and at different concentrations of ethanol gaz. The corresponding resistance decreases with increase of the relative humidity (RH%) for different doping levels of Sn. The sensor based on ZnO doped
with Sn to 5% this much linearity with high sensitivity to moisture. It is indicated that the zinc oxide film doped with tin have a high sensitivity in these gas detection experiments.
Diplôme : Doctorat En ligne : ../theses/electronique/GHA6927.pdf Format de la ressource électronique : Permalink : index.php?lvl=notice_display&id=10279 Elaboration et caractérisation des matériaux en couches minces d’oxydes de zinc pour applications capteurs [texte imprimé] / Salah Ghanem, Auteur ; Azzedine Telia, Directeur de thèse . - جامعة الإخوة منتوري قسنطينة, 2016 . - 115 f. ; 30 cm.
2 copies imprimées disponibles
Langues : Français (fre)
Catégories : Français - Anglais
ElectroniqueTags : ZnO dipcoating spin coating Capteur humidité Capteur de gaz humidity sensor gaz sensor أكسيد الزنك الطلاء بالغمس الطلاء بالتدوير ملقط الرطوبة ملقط الغاز Index. décimale : 621 Electronique Résumé :
This work focuses on the study, development and characterization of thin film materials based on zinc oxide for use sensing application. Those films were elaborated using sol gel technique associated to dip and spin coating. At first it sets out general notions about gas sensing and the different types of chemical sensors based on metal oxide. A presentation of the sol-gel process will
be discussed. The Properties of gas and humidity sensing of ZnO thin films will be dealt with illustrations and discussions of surface phenomena. The mounting manipulations ensuring filing procedures and The steps of developing thin film ZnO include all phases of preparation will be exhibited. After the phase of the preparation, characterization were performed on the samples of pure and Sn doped ZnO.A comparative study has been carried out between films elaborated by
spincoating and films elaborated by . For the tests of relative humidity both sensors show an obvious change in the impedance with respect to Rh%. The effect of the operating temperature was also studied. The Sn doping effect on ZnO films was also studied. Characterisation XRD showedthat the intensity of the XRD peaks decreases with increasing concentrations of Sn.AFM images showed that the surface morphologies of the films are dependent on dopant concentration.To study
the properties of the reaction of the sensor based on ZnO films to humidity and volatile gas of ethanol. we investigated the change in sensor resistance at different relative humidity environments and at different concentrations of ethanol gaz. The corresponding resistance decreases with increase of the relative humidity (RH%) for different doping levels of Sn. The sensor based on ZnO doped
with Sn to 5% this much linearity with high sensitivity to moisture. It is indicated that the zinc oxide film doped with tin have a high sensitivity in these gas detection experiments.
Diplôme : Doctorat En ligne : ../theses/electronique/GHA6927.pdf Format de la ressource électronique : Permalink : index.php?lvl=notice_display&id=10279 Exemplaires (1)
Code-barres Cote Support Localisation Section Disponibilité GHA/6927 GHA/6927 Thèse Bibliothèque principale Thèses Disponible
Titre : Electronic and structural properties of Al1-xInxN with application to an electronic device. Type de document : texte imprimé Auteurs : Abdelhakim Meziani, Auteur ; Azzedine Telia, Directeur de thèse Editeur : جامعة الإخوة منتوري قسنطينة Année de publication : 2018 Importance : 112 f. Format : 30 cm. Note générale : 2 copies imprimées disponibles
Langues : Anglais (eng) Catégories : Français - Anglais
PhysiqueTags : Materials science: Semi-conductor Nitrures LCAO théorie de la densité fonctionnelle propriétés électroniques et structurales Nitrides alloys tight binding density functional theory electronic and structural properties نیترید النظریة الوظیفیة للكثافة الخصائص الھیكلیة والإلكترونیة نظریة الربط القوي Index. décimale : 530 Physique Résumé :
The ternary AlInN is a material used in optical components such as light emitting diodes, laser diodes, fiber Bragg grating as well as in electronic components such as HEMTs. It comes in two phases, wurtzite and zinc blende, it is proposed then, in this work, first to compare the structural and electronic properties of the two phases. This comparison would be beneficial to choose the most appropriate phase for a given component. Furthermore we will try to study high pressure effects on the structural and electronic properties of AlInN and its phase transformation into the rocksalt phase. The AlInN comes generally in the form of heterostructure AlInN/GaN in electronic components. Its growth on the GaN layer causes the appearance of elastic stresses resulting in profound changes in its structural and electronic properties. The second part of this work will involve the study of the physical effect of these constraints. And finally after a brief introduction on architecture and on the physics of a HEMT, one will attempt to apply the above concepts to the effects on the main parameters governing the operation of this component.
Two calculation methods have been used for theoretical studies: the first semi empirical tight
binding method, and the second ab-initio the density functional theory. A theoretical overview
of these methods is exposed as well as the calculation parameters used.
Diplôme : Doctorat en sciences En ligne : ../theses/physique/MEZ7424.pdf Format de la ressource électronique : Permalink : index.php?lvl=notice_display&id=11077 Electronic and structural properties of Al1-xInxN with application to an electronic device. [texte imprimé] / Abdelhakim Meziani, Auteur ; Azzedine Telia, Directeur de thèse . - جامعة الإخوة منتوري قسنطينة, 2018 . - 112 f. ; 30 cm.
2 copies imprimées disponibles
Langues : Anglais (eng)
Catégories : Français - Anglais
PhysiqueTags : Materials science: Semi-conductor Nitrures LCAO théorie de la densité fonctionnelle propriétés électroniques et structurales Nitrides alloys tight binding density functional theory electronic and structural properties نیترید النظریة الوظیفیة للكثافة الخصائص الھیكلیة والإلكترونیة نظریة الربط القوي Index. décimale : 530 Physique Résumé :
The ternary AlInN is a material used in optical components such as light emitting diodes, laser diodes, fiber Bragg grating as well as in electronic components such as HEMTs. It comes in two phases, wurtzite and zinc blende, it is proposed then, in this work, first to compare the structural and electronic properties of the two phases. This comparison would be beneficial to choose the most appropriate phase for a given component. Furthermore we will try to study high pressure effects on the structural and electronic properties of AlInN and its phase transformation into the rocksalt phase. The AlInN comes generally in the form of heterostructure AlInN/GaN in electronic components. Its growth on the GaN layer causes the appearance of elastic stresses resulting in profound changes in its structural and electronic properties. The second part of this work will involve the study of the physical effect of these constraints. And finally after a brief introduction on architecture and on the physics of a HEMT, one will attempt to apply the above concepts to the effects on the main parameters governing the operation of this component.
Two calculation methods have been used for theoretical studies: the first semi empirical tight
binding method, and the second ab-initio the density functional theory. A theoretical overview
of these methods is exposed as well as the calculation parameters used.
Diplôme : Doctorat en sciences En ligne : ../theses/physique/MEZ7424.pdf Format de la ressource électronique : Permalink : index.php?lvl=notice_display&id=11077 Exemplaires (1)
Code-barres Cote Support Localisation Section Disponibilité MEZ/7424 MEZ/7424 Thèse Bibliothèque principale Thèses Disponible
Titre : Etude et caractérisation des structures MIS sur InP et des nanostructures à base de ZnO Type de document : texte imprimé Auteurs : Toufik Mouet, Auteur ; Azzedine Telia, Directeur de thèse ; Thierry Devers, Directeur de thèse Editeur : Constantine : Université Mentouri Constantine Année de publication : 2011 Importance : 134 f. Format : 31 cm Note générale : Doctorat en sciences
2 copies imprimées disponiblesLangues : Français (fre) Catégories : Français - Anglais
ElectroniqueTags : Electronique Index. décimale : 621 Electronique Diplôme : Doctorat en sciences En ligne : ../theses/electronique/MOU5889.pdf Format de la ressource électronique : Permalink : index.php?lvl=notice_display&id=5683 Etude et caractérisation des structures MIS sur InP et des nanostructures à base de ZnO [texte imprimé] / Toufik Mouet, Auteur ; Azzedine Telia, Directeur de thèse ; Thierry Devers, Directeur de thèse . - Constantine : Université Mentouri Constantine, 2011 . - 134 f. ; 31 cm.
Doctorat en sciences
2 copies imprimées disponibles
Langues : Français (fre)
Catégories : Français - Anglais
ElectroniqueTags : Electronique Index. décimale : 621 Electronique Diplôme : Doctorat en sciences En ligne : ../theses/electronique/MOU5889.pdf Format de la ressource électronique : Permalink : index.php?lvl=notice_display&id=5683 Exemplaires (1)
Code-barres Cote Support Localisation Section Disponibilité MOU/5889 MOU/5889 Thèse Bibliothèque principale Thèses Disponible
Titre : Etude de l'interface oxyde natif - (n) InP par Ac admittance Type de document : texte imprimé Auteurs : Toufik Mouet ; Univ. de Constantine, Éditeur scientifique ; Azzedine Telia, Directeur de thèse Année de publication : 2000 Importance : 70 f. Note générale : 01 disponible dans la salle de recherche
02 disponibles au magasin de la bibliothèque centraleLangues : Français (fre) Catégories : Français - Anglais
ElectroniqueTags : InP(n) Composants III-V contact métal semiconducteur Structure métal Isolant semiconducteur Interface isolat InP Etats d'interface Impédance Circuit equivalent Index. décimale : 621 Electronique Permalink : index.php?lvl=notice_display&id=2511 Etude de l'interface oxyde natif - (n) InP par Ac admittance [texte imprimé] / Toufik Mouet ; Univ. de Constantine, Éditeur scientifique ; Azzedine Telia, Directeur de thèse . - 2000 . - 70 f.
01 disponible dans la salle de recherche
02 disponibles au magasin de la bibliothèque centrale
Langues : Français (fre)
Catégories : Français - Anglais
ElectroniqueTags : InP(n) Composants III-V contact métal semiconducteur Structure métal Isolant semiconducteur Interface isolat InP Etats d'interface Impédance Circuit equivalent Index. décimale : 621 Electronique Permalink : index.php?lvl=notice_display&id=2511 Exemplaires (1)
Code-barres Cote Support Localisation Section Disponibilité MOU/3462 MOU/3462 Thèse Bibliothèque principale Thèses Disponible
Titre : Etude et modélisation des phénomènes thermiques et de transport sur les performances des composants de puissance à base des hétérostructures AlGaN/GaN, AlInN/GaN. Type de document : texte imprimé Auteurs : Aissa Bellakhdar, Auteur ; Azzedine Telia, Directeur de thèse Mention d'édition : 26/01/2021 Editeur : جامعة الإخوة منتوري قسنطينة Année de publication : 2021 Importance : 107 f. Format : 30 cm. Note générale : 1 copies imprimées disponibles
Langues : Français (fre) Catégories : Français - Anglais
ElectroniqueTags : Electronique:Microélectronique Cap GaN GaN / AlGaN / GaN GaN / AlInN / GaN HEMT Effet auto-échauffant GaN cap GaN/AlGaN/GaN GaN/AlInN/GaN Self-heating effect GaNغطاء تأثير التسخين الذاتي Index. décimale : 621 Electronique Résumé :
We present an analytical model for the I-V characteristics of AlGaN/GaN and AlInN/GaN high electron mobility transistors (HEMT). Our study focuses on the influence of a GaN capping layer, and of thermal and self-heating effects. (structures A). The saturated drain current drops significantly when the temperature rises above room temperature from 300 K to 425 K in both structures A and B. Furthermore, the self-heating effect strongly influences the Ids-Vds characteristics. Especially, the drain current at higher drain voltage becomes weaker and a negative resistance effect may arise. In conclusion, n+GaN/AlInN/GaN HEMTs exhibit better performance,
especially when covered with a thin highly-doped capping layer, even when selfheating and thermal effects are taken into account. Spontaneous and piezoelectric polarizations at Al(Ga,In)N/GaN and GaN/Al(Ga,In)N
interfaces have been incorporated in the analysis. Our model permits to fit several published data. Our results indicate that the GaN cap layer reduces the sheet density of the two-dimensional electron gas (2DEG), leading to a decrease of the drain current, and that n +-doped GaN cap layer provides a higher sheet density than
undoped one. In n + GaN/AlInN/GaN HEMTs, the sheet carrier concentration is higher than in n + GaN/AlGaN/GaN HEMTs, due to the higher spontaneous polarization charge and conduction band discontinuity at the substrate/barrier layer interface. HEMT’s performances are greatly degraded in by self-heating and thermal
effects, more in GaN/Al0.83InN0.17/GaN (structures B) than in GaN/Al0.32Ga0.68N /Ga
Diplôme : Doctorat en sciences En ligne : ../theses/electronique/BEL7717.pdf Format de la ressource électronique : Permalink : index.php?lvl=notice_display&id=11551 Etude et modélisation des phénomènes thermiques et de transport sur les performances des composants de puissance à base des hétérostructures AlGaN/GaN, AlInN/GaN. [texte imprimé] / Aissa Bellakhdar, Auteur ; Azzedine Telia, Directeur de thèse . - 26/01/2021 . - جامعة الإخوة منتوري قسنطينة, 2021 . - 107 f. ; 30 cm.
1 copies imprimées disponibles
Langues : Français (fre)
Catégories : Français - Anglais
ElectroniqueTags : Electronique:Microélectronique Cap GaN GaN / AlGaN / GaN GaN / AlInN / GaN HEMT Effet auto-échauffant GaN cap GaN/AlGaN/GaN GaN/AlInN/GaN Self-heating effect GaNغطاء تأثير التسخين الذاتي Index. décimale : 621 Electronique Résumé :
We present an analytical model for the I-V characteristics of AlGaN/GaN and AlInN/GaN high electron mobility transistors (HEMT). Our study focuses on the influence of a GaN capping layer, and of thermal and self-heating effects. (structures A). The saturated drain current drops significantly when the temperature rises above room temperature from 300 K to 425 K in both structures A and B. Furthermore, the self-heating effect strongly influences the Ids-Vds characteristics. Especially, the drain current at higher drain voltage becomes weaker and a negative resistance effect may arise. In conclusion, n+GaN/AlInN/GaN HEMTs exhibit better performance,
especially when covered with a thin highly-doped capping layer, even when selfheating and thermal effects are taken into account. Spontaneous and piezoelectric polarizations at Al(Ga,In)N/GaN and GaN/Al(Ga,In)N
interfaces have been incorporated in the analysis. Our model permits to fit several published data. Our results indicate that the GaN cap layer reduces the sheet density of the two-dimensional electron gas (2DEG), leading to a decrease of the drain current, and that n +-doped GaN cap layer provides a higher sheet density than
undoped one. In n + GaN/AlInN/GaN HEMTs, the sheet carrier concentration is higher than in n + GaN/AlGaN/GaN HEMTs, due to the higher spontaneous polarization charge and conduction band discontinuity at the substrate/barrier layer interface. HEMT’s performances are greatly degraded in by self-heating and thermal
effects, more in GaN/Al0.83InN0.17/GaN (structures B) than in GaN/Al0.32Ga0.68N /Ga
Diplôme : Doctorat en sciences En ligne : ../theses/electronique/BEL7717.pdf Format de la ressource électronique : Permalink : index.php?lvl=notice_display&id=11551 Exemplaires (1)
Code-barres Cote Support Localisation Section Disponibilité BEL/7717 BEL/7717 Thèse Bibliothèque principale Thèses Disponible
