| Titre : |
أمثلة زرع أيوني الأنتموان و الزرنيح في السليكون |
| Type de document : |
texte imprimé |
| Auteurs : |
حمزة سرار, Auteur ; ربيحة لعباني, Directeur de thèse |
| Editeur : |
جامعة الإخوة منتوري قسنطينة |
| Année de publication : |
2017 |
| Importance : |
191 ورقة. |
| Format : |
30 سم. |
| Note générale : |
2نسخ موجودة مكتبة المركزية
|
| Langues : |
Arabe (ara) |
| Catégories : |
Arabe
الفيزياء
|
| Tags : |
علوم المواد:أنصاف النواقل ion-matter interactions silicon antimony Arsenic Rutherford backscattering
spectroscopy (RBS) interactions ion-matière Silicium Antimoine Spectroscopie de
Rétrodiffusion Rutherford (RBS) لتفاعلات أيون-مادة السليكون الأنتموان الزرنيخ مطيافية الانتشار الارتدادي
لروذرفورد ) (RB |
| Index. décimale : |
530 الفيزياء |
| Résumé : |
In this work, several parameters related to the ion implantation of antimony or
arsenic, in silicon substrates have been studied. This study was realized experimentally and by simulation using suitable programs. Theoretically, we have used SRIM and C-TRIM programs to simulate and predict the physical phenomena resulting from ion collisions with target atoms. We have also obtained the different distributions (vacancies, ions,….) in depth of the target and estimated several parameters related to the implantation (RP, DRP, ....). In addition, we have studied the channeling phenomenon resulting from the impact of the ions beam orientation of the ions with respect to the sample surface. Experimentally, the samples have been prepared by ion implantation of Sb+ (dose =1×1015 Sb+/cm2, 1.6×1015 Sb+/cm2, energy = 120 keV, in Si (111) substrates) or As+ (dose =1.5×1016 As+/cm2, energy = 100 keV, in Si (100) substrates). Afterwards, thermal annealing (900 ° C,30min) have been performed under vacuum. We adopted RUMP, RBX and SIMNRA programs to analyze RBS spectra in random mode. We were able to estimate different parameters of ion implantation which were in agreement with simulation. Concerning the experimental spectra in channeling mode, we have used the suitable RBX program. This program allowed us to estimate the thickness of the damaged layer of the target and to plot the curves of defects. Concerning the heat treatments, by these annealings, a good restoration of radiation has been achieved. Moreover, the impurities (As or Sb) have been electrically activated. The samples have also been analyzed by other techniques such as X-Ray Diffraction (XRD), Infra Red spectroscopy by Fourier Transform (FTIR), Photoluminescence spectroscopy (PL) and four points resistivity. |
| Diplôme : |
Doctorat en sciences |
| En ligne : |
../theses/physique/ASER4170.pdf |
| Format de la ressource électronique : |
pdf |
| Permalink : |
index.php?lvl=notice_display&id=10704 |
أمثلة زرع أيوني الأنتموان و الزرنيح في السليكون [texte imprimé] / حمزة سرار, Auteur ; ربيحة لعباني, Directeur de thèse . - جامعة الإخوة منتوري قسنطينة, 2017 . - 191 ورقة. ; 30 سم. 2نسخ موجودة مكتبة المركزية
Langues : Arabe ( ara)
| Catégories : |
Arabe
الفيزياء
|
| Tags : |
علوم المواد:أنصاف النواقل ion-matter interactions silicon antimony Arsenic Rutherford backscattering
spectroscopy (RBS) interactions ion-matière Silicium Antimoine Spectroscopie de
Rétrodiffusion Rutherford (RBS) لتفاعلات أيون-مادة السليكون الأنتموان الزرنيخ مطيافية الانتشار الارتدادي
لروذرفورد ) (RB |
| Index. décimale : |
530 الفيزياء |
| Résumé : |
In this work, several parameters related to the ion implantation of antimony or
arsenic, in silicon substrates have been studied. This study was realized experimentally and by simulation using suitable programs. Theoretically, we have used SRIM and C-TRIM programs to simulate and predict the physical phenomena resulting from ion collisions with target atoms. We have also obtained the different distributions (vacancies, ions,….) in depth of the target and estimated several parameters related to the implantation (RP, DRP, ....). In addition, we have studied the channeling phenomenon resulting from the impact of the ions beam orientation of the ions with respect to the sample surface. Experimentally, the samples have been prepared by ion implantation of Sb+ (dose =1×1015 Sb+/cm2, 1.6×1015 Sb+/cm2, energy = 120 keV, in Si (111) substrates) or As+ (dose =1.5×1016 As+/cm2, energy = 100 keV, in Si (100) substrates). Afterwards, thermal annealing (900 ° C,30min) have been performed under vacuum. We adopted RUMP, RBX and SIMNRA programs to analyze RBS spectra in random mode. We were able to estimate different parameters of ion implantation which were in agreement with simulation. Concerning the experimental spectra in channeling mode, we have used the suitable RBX program. This program allowed us to estimate the thickness of the damaged layer of the target and to plot the curves of defects. Concerning the heat treatments, by these annealings, a good restoration of radiation has been achieved. Moreover, the impurities (As or Sb) have been electrically activated. The samples have also been analyzed by other techniques such as X-Ray Diffraction (XRD), Infra Red spectroscopy by Fourier Transform (FTIR), Photoluminescence spectroscopy (PL) and four points resistivity. |
| Diplôme : |
Doctorat en sciences |
| En ligne : |
../theses/physique/ASER4170.pdf |
| Format de la ressource électronique : |
pdf |
| Permalink : |
index.php?lvl=notice_display&id=10704 |
|
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