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Titre : Etude de couches minces de silicium implantées à l’antimoine ou l’arsenic Type de document : texte imprimé Auteurs : Hassan Guendouz, Auteur ; R. Labbani, Directeur de thèse Editeur : constantine [Algérie] : Université Constantine 1 Année de publication : 2014 Importance : 121 f. Format : 30 cm. Note générale : 2 copies imprimées disponibles
Langues : Français (fre) Tags : Silicium antimoine arsenic implantation ionique RBS simulation RBX microdureté de Knoop Silicon antimony ion implantation RBX simulation Knoop
micro-hardness ????????? ??????? ????? ??????? ???????? RBX ????? Knoop ????????Index. décimale : 530 Physique Résumé : In this work, the ion implantation of antimony or arsenic in silicon specimens was investigated. This study was based on the simulation of experimental RBS spectra by RBX code and the measurement of Knoop micro-hardness.
Experimentally, the samples which were characterized by RBS and simulated by RBX are the virgin single crystal silicon Si(111) and the doped single crystal silicon Si(111) by antimony ions with a dose of for an energy of . Those which were characterized by the Knoop test are, in one hand, the single crystal silicon Si(111) wafers which are doped by antimony ions with a dose of for an energy of
. On the other hand, they are the other single crystal silicon Si(111) samples which are doped by arsenic ions with a dose of for an energy of . A conventional thermal annealing under vacuum for thirty minutes was applied at 900 °C during 30 minutes Regarding to the characterization of thin films, the wafers which are un-implanted or implanted by antimony with a dose of were analyzed by the RBS
technique with both random and channeling mode. The other implanted specimens by antimony or arsenic with doses of or respectively were analyzed by Knoop micro-hardness test. All the doped samples were characterized before and after the thermal annealing. This characterization revealed the caused damages,
their restoration and their influence on the surface hardening.
The RBX simulation of RBS spectra in both random and channeled mode allowed us to estimate the ion implantation parameters, these parameters are agreed with those which were found by SRIM 2013 simulation and those which were calculated empirically. Furthermore, the defect concentration profile has been obtained.
Diplôme : Magistère En ligne : ../theses/physique/GUE6749.pdf Format de la ressource électronique : Permalink : https://bu.umc.edu.dz/md/index.php?lvl=notice_display&id=9866 Etude de couches minces de silicium implantées à l’antimoine ou l’arsenic [texte imprimé] / Hassan Guendouz, Auteur ; R. Labbani, Directeur de thèse . - constantine (Route ain el bey, Algérie) : Université Constantine 1, 2014 . - 121 f. ; 30 cm.
2 copies imprimées disponibles
Langues : Français (fre)
Tags : Silicium antimoine arsenic implantation ionique RBS simulation RBX microdureté de Knoop Silicon antimony ion implantation RBX simulation Knoop
micro-hardness ????????? ??????? ????? ??????? ???????? RBX ????? Knoop ????????Index. décimale : 530 Physique Résumé : In this work, the ion implantation of antimony or arsenic in silicon specimens was investigated. This study was based on the simulation of experimental RBS spectra by RBX code and the measurement of Knoop micro-hardness.
Experimentally, the samples which were characterized by RBS and simulated by RBX are the virgin single crystal silicon Si(111) and the doped single crystal silicon Si(111) by antimony ions with a dose of for an energy of . Those which were characterized by the Knoop test are, in one hand, the single crystal silicon Si(111) wafers which are doped by antimony ions with a dose of for an energy of
. On the other hand, they are the other single crystal silicon Si(111) samples which are doped by arsenic ions with a dose of for an energy of . A conventional thermal annealing under vacuum for thirty minutes was applied at 900 °C during 30 minutes Regarding to the characterization of thin films, the wafers which are un-implanted or implanted by antimony with a dose of were analyzed by the RBS
technique with both random and channeling mode. The other implanted specimens by antimony or arsenic with doses of or respectively were analyzed by Knoop micro-hardness test. All the doped samples were characterized before and after the thermal annealing. This characterization revealed the caused damages,
their restoration and their influence on the surface hardening.
The RBX simulation of RBS spectra in both random and channeled mode allowed us to estimate the ion implantation parameters, these parameters are agreed with those which were found by SRIM 2013 simulation and those which were calculated empirically. Furthermore, the defect concentration profile has been obtained.
Diplôme : Magistère En ligne : ../theses/physique/GUE6749.pdf Format de la ressource électronique : Permalink : https://bu.umc.edu.dz/md/index.php?lvl=notice_display&id=9866 Exemplaires
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Titre : Contribution à l’étude de l’implantation des ions de carbone dans le silicium Type de document : texte imprimé Auteurs : Amar Bouguerra, Auteur Editeur : جامعة الإخوة منتوري قسنطينة Année de publication : 2016 Importance : 140 f. Format : 30 cm. Note générale : 2 copies imprimées disponibles
Langues : Français (fre) Tags : carbone silicium implantation ionique Trim Ctystal-Trim carbon silicon ion implantation Crystal Trim ??????? ???????? ????? ??????? Index. décimale : 530 Physique Résumé : In this work, we studied the ion implantation of carbon in silicon by simulation and experimentally. Several phenomena related to carbon implantation in Si (100) were simulated using two codes: Trim and Crystal Trim.
Experimentally, the samples were prepared by implanting carbon into silicon wafers with an implantation energy of 70 keV C+ to fluences of 11016 C+ cm-2 and 11017 C+ cm-2 (for a tilt angle of 7°).The implanted wafers were annealed at different temperatures (875 ° C, 1000 °C and 1250 °C). The characterization of the samples was performed using three techniques:
secondary ion masse spectroscopy (SIMS), Raman spectroscopy and Vickers hardness test.
In the simulation part, we determined several parameters related to the distribution profiles of the implanted ions. We also studied the effect of implantation parameters (such as energy, fluence, tilt angle and orientation of the substrate) on the distribution profiles.
SIMS measurements provided us the experimental distribution profiles of implanted ions. The effect of post-annealing treatment was also studied by this technique.
The analysis by Raman spectroscopy was very useful to study the damage and recrystallization of implanted targets. We were able to determine the rate of damage of the implanted areas. We also studied the effect of thermal annealing on the restoration of defects.
Finally, the Vickers micro-hardness test allowed us to study the effects of implantation and thermal annealing on the hardness of the implanted substrates. The hardness decreased considerably after ion implantation (due to amorphization of the implanted zones) and increased significantly after thermal annealing
Diplôme : Doctorat en sciences En ligne : ../theses/physique/BOU6969.pdf Format de la ressource électronique : Permalink : https://bu.umc.edu.dz/md/index.php?lvl=notice_display&id=10367 Contribution à l’étude de l’implantation des ions de carbone dans le silicium [texte imprimé] / Amar Bouguerra, Auteur . - [S.l.] : جامعة الإخوة منتوري قسنطينة, 2016 . - 140 f. ; 30 cm.
2 copies imprimées disponibles
Langues : Français (fre)
Tags : carbone silicium implantation ionique Trim Ctystal-Trim carbon silicon ion implantation Crystal Trim ??????? ???????? ????? ??????? Index. décimale : 530 Physique Résumé : In this work, we studied the ion implantation of carbon in silicon by simulation and experimentally. Several phenomena related to carbon implantation in Si (100) were simulated using two codes: Trim and Crystal Trim.
Experimentally, the samples were prepared by implanting carbon into silicon wafers with an implantation energy of 70 keV C+ to fluences of 11016 C+ cm-2 and 11017 C+ cm-2 (for a tilt angle of 7°).The implanted wafers were annealed at different temperatures (875 ° C, 1000 °C and 1250 °C). The characterization of the samples was performed using three techniques:
secondary ion masse spectroscopy (SIMS), Raman spectroscopy and Vickers hardness test.
In the simulation part, we determined several parameters related to the distribution profiles of the implanted ions. We also studied the effect of implantation parameters (such as energy, fluence, tilt angle and orientation of the substrate) on the distribution profiles.
SIMS measurements provided us the experimental distribution profiles of implanted ions. The effect of post-annealing treatment was also studied by this technique.
The analysis by Raman spectroscopy was very useful to study the damage and recrystallization of implanted targets. We were able to determine the rate of damage of the implanted areas. We also studied the effect of thermal annealing on the restoration of defects.
Finally, the Vickers micro-hardness test allowed us to study the effects of implantation and thermal annealing on the hardness of the implanted substrates. The hardness decreased considerably after ion implantation (due to amorphization of the implanted zones) and increased significantly after thermal annealing
Diplôme : Doctorat en sciences En ligne : ../theses/physique/BOU6969.pdf Format de la ressource électronique : Permalink : https://bu.umc.edu.dz/md/index.php?lvl=notice_display&id=10367 Exemplaires
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Titre : أمثلة زرع أيوني الأنتموان و الزرنيح في السليكون Type de document : texte imprimé Auteurs : حمزة سرار, Auteur ; ربيحة لعباني, Directeur de thèse Editeur : جامعة الإخوة منتوري قسنطينة Année de publication : 2017 Importance : 191 ورقة. Format : 30 سم. Note générale : 2نسخ موجودة مكتبة المركزية
Langues : Arabe (ara) Tags : ion-matter interactions silicon antimony Arsenic Rutherford backscattering
spectroscopy (RBS) interactions ion-matière Silicium Antimoine Spectroscopie de
Rétrodiffusion Rutherford (RBS) ???????? ????-???? ???????? ????????? ??????? ??????? ???????? ?????????
????????? ) (RBIndex. décimale : 530 الفيزياء Résumé : In this work, several parameters related to the ion implantation of antimony or
arsenic, in silicon substrates have been studied. This study was realized experimentally and by
simulation using suitable programs.
Theoretically, we have used SRIM and C-TRIM programs to simulate and predict the
physical phenomena resulting from ion collisions with target atoms. We have also obtained
the different distributions (vacancies, ions,….) in depth of the target and estimated several
parameters related to the implantation (RP, DRP, ....). In addition, we have studied the
channeling phenomenon resulting from the impact of the ions beam orientation of the ions
with respect to the sample surface.
Experimentally, the samples have been prepared by ion implantation of Sb+ (dose =1×1015
Sb+/cm2, 1.6×1015 Sb+/cm2, energy = 120 keV, in Si (111) substrates) or As+ (dose =1.5×1016
As+/cm2, energy = 100 keV, in Si (100) substrates). Afterwards, thermal annealing (900 ° C,
30min) have been performed under vacuum. We adopted RUMP, RBX and SIMNRA
programs to analyze RBS spectra in random mode. We were able to estimate different
parameters of ion implantation which were in agreement with simulation. Concerning the
experimental spectra in channeling mode, we have used the suitable RBX program. This
program allowed us to estimate the thickness of the damaged layer of the target and to plot the
curves of defects. Concerning the heat treatments, by these annealings, a good restoration of
radiation has been achieved. Moreover, the impurities (As or Sb) have been electrically
activated.
The samples have also been analyzed by other techniques such as X-Ray Diffraction (XRD),
Infra Red spectroscopy by Fourier Transform (FTIR), Photoluminescence spectroscopy (PL)
and four points resistivity.Diplôme : Doctorat en sciences En ligne : ../theses/physique/ASER4170.pdf Format de la ressource électronique : Permalink : https://bu.umc.edu.dz/md/index.php?lvl=notice_display&id=10704 أمثلة زرع أيوني الأنتموان و الزرنيح في السليكون [texte imprimé] / حمزة سرار, Auteur ; ربيحة لعباني, Directeur de thèse . - [S.l.] : جامعة الإخوة منتوري قسنطينة, 2017 . - 191 ورقة. ; 30 سم.
2نسخ موجودة مكتبة المركزية
Langues : Arabe (ara)
Tags : ion-matter interactions silicon antimony Arsenic Rutherford backscattering
spectroscopy (RBS) interactions ion-matière Silicium Antimoine Spectroscopie de
Rétrodiffusion Rutherford (RBS) ???????? ????-???? ???????? ????????? ??????? ??????? ???????? ?????????
????????? ) (RBIndex. décimale : 530 الفيزياء Résumé : In this work, several parameters related to the ion implantation of antimony or
arsenic, in silicon substrates have been studied. This study was realized experimentally and by
simulation using suitable programs.
Theoretically, we have used SRIM and C-TRIM programs to simulate and predict the
physical phenomena resulting from ion collisions with target atoms. We have also obtained
the different distributions (vacancies, ions,….) in depth of the target and estimated several
parameters related to the implantation (RP, DRP, ....). In addition, we have studied the
channeling phenomenon resulting from the impact of the ions beam orientation of the ions
with respect to the sample surface.
Experimentally, the samples have been prepared by ion implantation of Sb+ (dose =1×1015
Sb+/cm2, 1.6×1015 Sb+/cm2, energy = 120 keV, in Si (111) substrates) or As+ (dose =1.5×1016
As+/cm2, energy = 100 keV, in Si (100) substrates). Afterwards, thermal annealing (900 ° C,
30min) have been performed under vacuum. We adopted RUMP, RBX and SIMNRA
programs to analyze RBS spectra in random mode. We were able to estimate different
parameters of ion implantation which were in agreement with simulation. Concerning the
experimental spectra in channeling mode, we have used the suitable RBX program. This
program allowed us to estimate the thickness of the damaged layer of the target and to plot the
curves of defects. Concerning the heat treatments, by these annealings, a good restoration of
radiation has been achieved. Moreover, the impurities (As or Sb) have been electrically
activated.
The samples have also been analyzed by other techniques such as X-Ray Diffraction (XRD),
Infra Red spectroscopy by Fourier Transform (FTIR), Photoluminescence spectroscopy (PL)
and four points resistivity.Diplôme : Doctorat en sciences En ligne : ../theses/physique/ASER4170.pdf Format de la ressource électronique : Permalink : https://bu.umc.edu.dz/md/index.php?lvl=notice_display&id=10704 Exemplaires
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Titre : Étude de cristaux photoniques en silicium pour l'application à la biodétection Type de document : texte imprimé Auteurs : Dallel Benelarbi, Auteur ; Touraya Bouchemat, Directeur de thèse Editeur : جامعة الإخوة منتوري قسنطينة Année de publication : 2018 Importance : 120 f. Format : 30 cm. Note générale : 2 copies imprimées disponibles
Langues : Français (fre) Tags : cristaux photoniques silicium biocapteurs guide d'onde cavité SOI sensibilité FDTD-2D photonic crystals silicon biosensors waveguide cavity sensitivity ???????? ??????? ???????? ?????????? ??????? ?????? ?????? ??????? .FDTD-2D ????????SOI Index. décimale : 621 Electronique Résumé : This thesis is dedicated to the study and design of new structures for optical detection. Indeed, the development of these optical devices has a growing and particular interest, particularly for targeting and identifying biological species. For this purpose, the photonic crystal-based components (CPs) have been widely exploited in the field of bio-detection.
Silicon is an ideal candidate designated as a support material for the realization of these devices. In this context, new coupling techniques between waveguide and optical cavity based on planar photonic crystals, made on a silicon-on-insulator (SOI) substrate, have been developed. To do this, we are modeling these bio detectors, optimizing their key parameters such as the quality factor and sensitivity to the optical index of the external environment, using commercial software Fullwave and Crystalwave that exploit the finite difference method in the two-dimensional time domain (FDTD-2D). We first studied the parallel coupling between a resonant cavity and a waveguide (W1) for application to the detection of DNA biomolecules. The originality of this study is to consider several sensors on a single platform, and to demonstrate that each sensor could detect a target independently and without interaction with others, without losses, and this, by acting on the parameters influencing the
essential characteristics, we note a high sensitivity and a low limit of detection. As for the second geometry studied, it consists of another coupling path, the latter comprises two sections of guides W1 between which has been arranged a ring cavity. We have also optimized the different structural parameters for this configuration, in order to improve the sensitivity and the quality factor in order to obtain another type of high-performance sensor, namely the temperature sensor. For this, we consider the evolution of the sensitivity as a function of the change in the temperature of the water, convincing results were noted.
Diplôme : Doctorat En ligne : ../theses/electronique/BEN7253.pdf Format de la ressource électronique : Permalink : https://bu.umc.edu.dz/md/index.php?lvl=notice_display&id=10845 Étude de cristaux photoniques en silicium pour l'application à la biodétection [texte imprimé] / Dallel Benelarbi, Auteur ; Touraya Bouchemat, Directeur de thèse . - [S.l.] : جامعة الإخوة منتوري قسنطينة, 2018 . - 120 f. ; 30 cm.
2 copies imprimées disponibles
Langues : Français (fre)
Tags : cristaux photoniques silicium biocapteurs guide d'onde cavité SOI sensibilité FDTD-2D photonic crystals silicon biosensors waveguide cavity sensitivity ???????? ??????? ???????? ?????????? ??????? ?????? ?????? ??????? .FDTD-2D ????????SOI Index. décimale : 621 Electronique Résumé : This thesis is dedicated to the study and design of new structures for optical detection. Indeed, the development of these optical devices has a growing and particular interest, particularly for targeting and identifying biological species. For this purpose, the photonic crystal-based components (CPs) have been widely exploited in the field of bio-detection.
Silicon is an ideal candidate designated as a support material for the realization of these devices. In this context, new coupling techniques between waveguide and optical cavity based on planar photonic crystals, made on a silicon-on-insulator (SOI) substrate, have been developed. To do this, we are modeling these bio detectors, optimizing their key parameters such as the quality factor and sensitivity to the optical index of the external environment, using commercial software Fullwave and Crystalwave that exploit the finite difference method in the two-dimensional time domain (FDTD-2D). We first studied the parallel coupling between a resonant cavity and a waveguide (W1) for application to the detection of DNA biomolecules. The originality of this study is to consider several sensors on a single platform, and to demonstrate that each sensor could detect a target independently and without interaction with others, without losses, and this, by acting on the parameters influencing the
essential characteristics, we note a high sensitivity and a low limit of detection. As for the second geometry studied, it consists of another coupling path, the latter comprises two sections of guides W1 between which has been arranged a ring cavity. We have also optimized the different structural parameters for this configuration, in order to improve the sensitivity and the quality factor in order to obtain another type of high-performance sensor, namely the temperature sensor. For this, we consider the evolution of the sensitivity as a function of the change in the temperature of the water, convincing results were noted.
Diplôme : Doctorat En ligne : ../theses/electronique/BEN7253.pdf Format de la ressource électronique : Permalink : https://bu.umc.edu.dz/md/index.php?lvl=notice_display&id=10845 Exemplaires
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