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Titre : Etude de couches minces de silicium implantées à l’antimoine ou l’arsenic Type de document : texte imprimé Auteurs : Hassan Guendouz, Auteur ; R. Labbani, Directeur de thèse Editeur : constantine [Algérie] : Université Constantine 1 Année de publication : 2014 Importance : 121 f. Format : 30 cm. Note générale : 2 copies imprimées disponibles
Langues : Français (fre) Tags : Silicium antimoine arsenic implantation ionique RBS simulation RBX microdureté de Knoop Silicon antimony ion implantation RBX simulation Knoop
micro-hardness ????????? ??????? ????? ??????? ???????? RBX ????? Knoop ????????Index. décimale : 530 Physique Résumé : In this work, the ion implantation of antimony or arsenic in silicon specimens was investigated. This study was based on the simulation of experimental RBS spectra by RBX code and the measurement of Knoop micro-hardness.
Experimentally, the samples which were characterized by RBS and simulated by RBX are the virgin single crystal silicon Si(111) and the doped single crystal silicon Si(111) by antimony ions with a dose of for an energy of . Those which were characterized by the Knoop test are, in one hand, the single crystal silicon Si(111) wafers which are doped by antimony ions with a dose of for an energy of
. On the other hand, they are the other single crystal silicon Si(111) samples which are doped by arsenic ions with a dose of for an energy of . A conventional thermal annealing under vacuum for thirty minutes was applied at 900 °C during 30 minutes Regarding to the characterization of thin films, the wafers which are un-implanted or implanted by antimony with a dose of were analyzed by the RBS
technique with both random and channeling mode. The other implanted specimens by antimony or arsenic with doses of or respectively were analyzed by Knoop micro-hardness test. All the doped samples were characterized before and after the thermal annealing. This characterization revealed the caused damages,
their restoration and their influence on the surface hardening.
The RBX simulation of RBS spectra in both random and channeled mode allowed us to estimate the ion implantation parameters, these parameters are agreed with those which were found by SRIM 2013 simulation and those which were calculated empirically. Furthermore, the defect concentration profile has been obtained.
Diplôme : Magistère En ligne : ../theses/physique/GUE6749.pdf Format de la ressource électronique : Permalink : https://bu.umc.edu.dz/md/index.php?lvl=notice_display&id=9866 Etude de couches minces de silicium implantées à l’antimoine ou l’arsenic [texte imprimé] / Hassan Guendouz, Auteur ; R. Labbani, Directeur de thèse . - constantine (Route ain el bey, Algérie) : Université Constantine 1, 2014 . - 121 f. ; 30 cm.
2 copies imprimées disponibles
Langues : Français (fre)
Tags : Silicium antimoine arsenic implantation ionique RBS simulation RBX microdureté de Knoop Silicon antimony ion implantation RBX simulation Knoop
micro-hardness ????????? ??????? ????? ??????? ???????? RBX ????? Knoop ????????Index. décimale : 530 Physique Résumé : In this work, the ion implantation of antimony or arsenic in silicon specimens was investigated. This study was based on the simulation of experimental RBS spectra by RBX code and the measurement of Knoop micro-hardness.
Experimentally, the samples which were characterized by RBS and simulated by RBX are the virgin single crystal silicon Si(111) and the doped single crystal silicon Si(111) by antimony ions with a dose of for an energy of . Those which were characterized by the Knoop test are, in one hand, the single crystal silicon Si(111) wafers which are doped by antimony ions with a dose of for an energy of
. On the other hand, they are the other single crystal silicon Si(111) samples which are doped by arsenic ions with a dose of for an energy of . A conventional thermal annealing under vacuum for thirty minutes was applied at 900 °C during 30 minutes Regarding to the characterization of thin films, the wafers which are un-implanted or implanted by antimony with a dose of were analyzed by the RBS
technique with both random and channeling mode. The other implanted specimens by antimony or arsenic with doses of or respectively were analyzed by Knoop micro-hardness test. All the doped samples were characterized before and after the thermal annealing. This characterization revealed the caused damages,
their restoration and their influence on the surface hardening.
The RBX simulation of RBS spectra in both random and channeled mode allowed us to estimate the ion implantation parameters, these parameters are agreed with those which were found by SRIM 2013 simulation and those which were calculated empirically. Furthermore, the defect concentration profile has been obtained.
Diplôme : Magistère En ligne : ../theses/physique/GUE6749.pdf Format de la ressource électronique : Permalink : https://bu.umc.edu.dz/md/index.php?lvl=notice_display&id=9866 Exemplaires
Code-barres Cote Support Localisation Section Disponibilité aucun exemplaire Etude structurale et optique de films minces ZnO élaborés par voie physique et/ou chimique / Adel Taabouche
Titre : Etude structurale et optique de films minces ZnO élaborés par voie physique et/ou chimique Type de document : texte imprimé Auteurs : Adel Taabouche, Auteur ; A. Bouabellou, Directeur de thèse Editeur : Constantine : Université Mentouri Constantine Année de publication : 2015 Importance : 107 f. Format : 30 cm. Note générale : 2 copies imprimées disponibles
Langues : Français (fre) Tags : Sciences des matériaux Couche mince ZnO PLD Spray DRX AFM RBS M-lines UV-visible Effet Hall Thin films XRD Hall Effect ????? ????? ????????? ??????? ???? ??? ?????? ?????? ??????
??????? ??????? ??????? ??????? ?????? ??????? ??? ???Index. décimale : 530 Physique Résumé : In the present work, we have studied essentially the structural and optical properties of ZnO thin films elaborated using the physical technique s of the pulsed laser ablation (PLD) and the chemical method of the ultrasonic spray pyrolysis.
We have prepared undoped (ZnO) and cobalt-doped zinc oxide (CZO) thin films (Co: 3,5 at.%) by means of the PLD method. Synthesized films have been deposited on glass and silicon substrates heated at 450°C. The used source was a KrF eximer laser (248 nm, 25 ns, 2 J ⁄cm2). Different experimental techniques have been carried out to analyze the fabricated films: the X-ray diffraction (XRD), atomic force microscopy (AFM), Rutherford Backscattering spectrometry (RBS), UV-visible spectrophotometry, M-lines
spectroscopy and Hall effect.
While the ZnO films obtained by the ultrasonic spray technique have been deposited with different deposition times (10, 20, 30 min) on a glass substrate heated at 410 °C, and then they have characterized by XRD, AFM, UV-visible, M-lines and hall effect techniques.
The carried out study shows that all the prepared zinc oxide films have a hexagonal wurtzite-type structure and a preferentially oriented along the direction (002) confused with the c-axis perpendicular to the surface of the substrates. The grain sizes deducted from the XRD measurements vary between 24 and 40 nm. The optical coupling analysis realized by M-lines show that the ZnO films are monomode (for both TE and TM polarizations). However, the undoped ZnO film obtained by PLD is found to be two
guiding modes for TM. The films obtained have an optical transmission of 70 to 90% in the visible region of the spectrum and an optical band gap varying from 3.18 to 3.37 eV.
The electrical conductivity and the concentration of carriers, deduced from Hall effect measurements, are relatively low namely for the films prepared by spray pyrolysis technique.
Diplôme : Doctorat en sciences En ligne : ../theses/physique/TAA6719.pdf Format de la ressource électronique : Permalink : https://bu.umc.edu.dz/md/index.php?lvl=notice_display&id=9904 Etude structurale et optique de films minces ZnO élaborés par voie physique et/ou chimique [texte imprimé] / Adel Taabouche, Auteur ; A. Bouabellou, Directeur de thèse . - Constantine : Université Mentouri Constantine, 2015 . - 107 f. ; 30 cm.
2 copies imprimées disponibles
Langues : Français (fre)
Tags : Sciences des matériaux Couche mince ZnO PLD Spray DRX AFM RBS M-lines UV-visible Effet Hall Thin films XRD Hall Effect ????? ????? ????????? ??????? ???? ??? ?????? ?????? ??????
??????? ??????? ??????? ??????? ?????? ??????? ??? ???Index. décimale : 530 Physique Résumé : In the present work, we have studied essentially the structural and optical properties of ZnO thin films elaborated using the physical technique s of the pulsed laser ablation (PLD) and the chemical method of the ultrasonic spray pyrolysis.
We have prepared undoped (ZnO) and cobalt-doped zinc oxide (CZO) thin films (Co: 3,5 at.%) by means of the PLD method. Synthesized films have been deposited on glass and silicon substrates heated at 450°C. The used source was a KrF eximer laser (248 nm, 25 ns, 2 J ⁄cm2). Different experimental techniques have been carried out to analyze the fabricated films: the X-ray diffraction (XRD), atomic force microscopy (AFM), Rutherford Backscattering spectrometry (RBS), UV-visible spectrophotometry, M-lines
spectroscopy and Hall effect.
While the ZnO films obtained by the ultrasonic spray technique have been deposited with different deposition times (10, 20, 30 min) on a glass substrate heated at 410 °C, and then they have characterized by XRD, AFM, UV-visible, M-lines and hall effect techniques.
The carried out study shows that all the prepared zinc oxide films have a hexagonal wurtzite-type structure and a preferentially oriented along the direction (002) confused with the c-axis perpendicular to the surface of the substrates. The grain sizes deducted from the XRD measurements vary between 24 and 40 nm. The optical coupling analysis realized by M-lines show that the ZnO films are monomode (for both TE and TM polarizations). However, the undoped ZnO film obtained by PLD is found to be two
guiding modes for TM. The films obtained have an optical transmission of 70 to 90% in the visible region of the spectrum and an optical band gap varying from 3.18 to 3.37 eV.
The electrical conductivity and the concentration of carriers, deduced from Hall effect measurements, are relatively low namely for the films prepared by spray pyrolysis technique.
Diplôme : Doctorat en sciences En ligne : ../theses/physique/TAA6719.pdf Format de la ressource électronique : Permalink : https://bu.umc.edu.dz/md/index.php?lvl=notice_display&id=9904 Exemplaires
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Titre : Elaboration de couches minces ZnO par ablation laser et caractérisation physique Type de document : texte imprimé Auteurs : Fouad Kermiche, Auteur ; A. Bouabellou, Directeur de thèse Editeur : Constantine : Université Mentouri Constantine Année de publication : 2015 Importance : 129 f. Format : 30 cm. Note générale : 2 copies imprimées disponibles
Langues : Français (fre) Tags : Sciences des matériaux ZnO couche mince ZnO dopé aluminium PLD RBS M-lines Effet hall thin films aluminum doped ZnO Hall Effect ????? ????? ????????? ????????? ??????? PLD ???????
??????? (RBS) ??????? ?????? ???????Lines-M ??? ??? ( Hall Effet"Index. décimale : 530 Physique Résumé : Our thesis aims to achieve and study of the physical properties (Structural, morphological, optical and electrical) of conductive and transparent thin layers of undoped zinc oxide (ZnO) and doped aluminum (AZO) prepared by the pulsed laser deposition technique (PLD) on glass and silicon substrates heated to 450°C.
The source used is a KrF excimer laser (248 nm, 25 ns, 2 J/cm2). The structural study by X-ray diffraction (XRD) showed that these layers has a hexagonal crystal structure with a preferential growth according to the (002) orientation, and a decrease in grain sizes of about 40 to 25 nm with increasing aluminum doping rates of 0 to 5 at%.
leading to a deterioration of the crystalline quality of the layers. The Atomic Force Microscope AFM was used to study the state of the surfaces and their roughness which was found to be between 3 and 15 nm. Rutherford backscattering spectroscopy RBS was used to determine the chemical composition and thickness of the prepared
films, the layer thickness ranges from about 179-366 nm. Study by UV-visible spectrophotometry showed that the transmittance of the samples is around 75% in visible with an optical band gap varying from 3.23 to 3.36 eV when the content of Al doping increases from 0 to 5 at.%. Analysis by (M-Lines) helped us to extract approximate values for the refractive index of these layers, which is between 1.83 and 1.97, and thicknesses very close from those estimated by the RBS analysis, as well as the possibility of using the layers in the field of the optical waveguide. In addition to these results, the electrical measurements by (Hall Effect) have shown that all the layers prepared in this study are n-type semiconductor, and that, the aluminum doping increases the concentration of charge carriers and reduces resistance.
Diplôme : Doctorat en sciences En ligne : ../theses/physique/KER6718.pdf Format de la ressource électronique : Permalink : https://bu.umc.edu.dz/md/index.php?lvl=notice_display&id=9905 Elaboration de couches minces ZnO par ablation laser et caractérisation physique [texte imprimé] / Fouad Kermiche, Auteur ; A. Bouabellou, Directeur de thèse . - Constantine : Université Mentouri Constantine, 2015 . - 129 f. ; 30 cm.
2 copies imprimées disponibles
Langues : Français (fre)
Tags : Sciences des matériaux ZnO couche mince ZnO dopé aluminium PLD RBS M-lines Effet hall thin films aluminum doped ZnO Hall Effect ????? ????? ????????? ????????? ??????? PLD ???????
??????? (RBS) ??????? ?????? ???????Lines-M ??? ??? ( Hall Effet"Index. décimale : 530 Physique Résumé : Our thesis aims to achieve and study of the physical properties (Structural, morphological, optical and electrical) of conductive and transparent thin layers of undoped zinc oxide (ZnO) and doped aluminum (AZO) prepared by the pulsed laser deposition technique (PLD) on glass and silicon substrates heated to 450°C.
The source used is a KrF excimer laser (248 nm, 25 ns, 2 J/cm2). The structural study by X-ray diffraction (XRD) showed that these layers has a hexagonal crystal structure with a preferential growth according to the (002) orientation, and a decrease in grain sizes of about 40 to 25 nm with increasing aluminum doping rates of 0 to 5 at%.
leading to a deterioration of the crystalline quality of the layers. The Atomic Force Microscope AFM was used to study the state of the surfaces and their roughness which was found to be between 3 and 15 nm. Rutherford backscattering spectroscopy RBS was used to determine the chemical composition and thickness of the prepared
films, the layer thickness ranges from about 179-366 nm. Study by UV-visible spectrophotometry showed that the transmittance of the samples is around 75% in visible with an optical band gap varying from 3.23 to 3.36 eV when the content of Al doping increases from 0 to 5 at.%. Analysis by (M-Lines) helped us to extract approximate values for the refractive index of these layers, which is between 1.83 and 1.97, and thicknesses very close from those estimated by the RBS analysis, as well as the possibility of using the layers in the field of the optical waveguide. In addition to these results, the electrical measurements by (Hall Effect) have shown that all the layers prepared in this study are n-type semiconductor, and that, the aluminum doping increases the concentration of charge carriers and reduces resistance.
Diplôme : Doctorat en sciences En ligne : ../theses/physique/KER6718.pdf Format de la ressource électronique : Permalink : https://bu.umc.edu.dz/md/index.php?lvl=notice_display&id=9905 Exemplaires
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Titre : Contribution à l’étude de couches minces de siliciures formés sur le silicium : (Ni,Co)/Si Type de document : texte imprimé Auteurs : Charafeddine Sedrati, Auteur ; A. Bouabellou, Directeur de thèse Editeur : جامعة الإخوة منتوري قسنطينة Année de publication : 2015 Importance : 147 f. Format : 30 cm. Note générale : 2 copies imprimées disponibles
Langues : Français (fre) Tags : Thin films cobalt nickel silicide sheet resistance RBS GIXRD AFM RAMAN.
Couches minces siliciures résistance carrée ????? ????? ?????? ???????? ??????????? ????????? ??????????Index. décimale : 530 Physique Résumé : This work focuses on the study of the formation of silicides by the solid state reaction in the Co/Ni/Si(100) and Ni/Co/Si(100) systems. The samples are obtained by a vacuum thermal evaporation of Co-Ni and Ni-Co bilayers on Si(100) substrates followed by a thermal annealing in air in the temperature range of 300 - 800 °C. The Grazing incidence X rays diffraction (GIXRD), the Rutherford backscattering spectroscopy (RBS), the atomic force microscopy (AFM), the Raman spectroscopy and the measurement of the electric resistivity by using the our-point method are the experimental techniques employed for samples characterization.
The analysis the Co/Ni/Si(100) system annealed at 300°C shows that the nickel reacts
initially with the Si substrate to form the Ni2Si silicide, and the cobalt diffuses to form
the (CoxNi1 -x)2Si phase. Then, the Ni2Si phase transforms to the NiSi monosilicide
which remains stable up to a temperature of 600°C. In addition, Co begins to react with the silicon to form the various phases of cobalt silicide. Beyond the temperature of 500°C, the ternary (CoxNi1 -x)Si2 phase appears. The formation of this ternary phase is confirmed by the shift of the peaks in the Raman spectrum. RBS technique shows that the ternary phase (CoxNi1 -x)Si2 is formed with different concentrations of Ni and Co elements with the thickness varying between 30 and 50 nm. Electrical measurements show that the obtained ternary silicide is more considered than the binary silicides because of its low resistivity and its high thermal stability.
For the Ni/Co/Si(100) system, the analysis allows to observe the formation of different silicides at different temperatures. Indeed, it is clearly confirmed the coexistence of both CoSi and Co2Si phases at 300 °C, the formation of Ni2Si rich nickel silicide at 400 °C followed by the formation of the NiSi, this latter keeps its thermal stability up to 700 °C, and finally the formation of NiSi2 at 800 ° C. The apparition of the ternary (CoxNi1 -x)Si phase takes place at 500°C.
Diplôme : Doctorat en sciences En ligne : ../theses/physique/SED6806.pdf Format de la ressource électronique : Permalink : https://bu.umc.edu.dz/md/index.php?lvl=notice_display&id=10059 Contribution à l’étude de couches minces de siliciures formés sur le silicium : (Ni,Co)/Si [texte imprimé] / Charafeddine Sedrati, Auteur ; A. Bouabellou, Directeur de thèse . - [S.l.] : جامعة الإخوة منتوري قسنطينة, 2015 . - 147 f. ; 30 cm.
2 copies imprimées disponibles
Langues : Français (fre)
Tags : Thin films cobalt nickel silicide sheet resistance RBS GIXRD AFM RAMAN.
Couches minces siliciures résistance carrée ????? ????? ?????? ???????? ??????????? ????????? ??????????Index. décimale : 530 Physique Résumé : This work focuses on the study of the formation of silicides by the solid state reaction in the Co/Ni/Si(100) and Ni/Co/Si(100) systems. The samples are obtained by a vacuum thermal evaporation of Co-Ni and Ni-Co bilayers on Si(100) substrates followed by a thermal annealing in air in the temperature range of 300 - 800 °C. The Grazing incidence X rays diffraction (GIXRD), the Rutherford backscattering spectroscopy (RBS), the atomic force microscopy (AFM), the Raman spectroscopy and the measurement of the electric resistivity by using the our-point method are the experimental techniques employed for samples characterization.
The analysis the Co/Ni/Si(100) system annealed at 300°C shows that the nickel reacts
initially with the Si substrate to form the Ni2Si silicide, and the cobalt diffuses to form
the (CoxNi1 -x)2Si phase. Then, the Ni2Si phase transforms to the NiSi monosilicide
which remains stable up to a temperature of 600°C. In addition, Co begins to react with the silicon to form the various phases of cobalt silicide. Beyond the temperature of 500°C, the ternary (CoxNi1 -x)Si2 phase appears. The formation of this ternary phase is confirmed by the shift of the peaks in the Raman spectrum. RBS technique shows that the ternary phase (CoxNi1 -x)Si2 is formed with different concentrations of Ni and Co elements with the thickness varying between 30 and 50 nm. Electrical measurements show that the obtained ternary silicide is more considered than the binary silicides because of its low resistivity and its high thermal stability.
For the Ni/Co/Si(100) system, the analysis allows to observe the formation of different silicides at different temperatures. Indeed, it is clearly confirmed the coexistence of both CoSi and Co2Si phases at 300 °C, the formation of Ni2Si rich nickel silicide at 400 °C followed by the formation of the NiSi, this latter keeps its thermal stability up to 700 °C, and finally the formation of NiSi2 at 800 ° C. The apparition of the ternary (CoxNi1 -x)Si phase takes place at 500°C.
Diplôme : Doctorat en sciences En ligne : ../theses/physique/SED6806.pdf Format de la ressource électronique : Permalink : https://bu.umc.edu.dz/md/index.php?lvl=notice_display&id=10059 Exemplaires
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Titre : Caractérisation de films de composés Fe Si formés sur Si mono cristallin Type de document : texte imprimé Auteurs : Amis Rouabhia ; Université Mentouri, Editeur scientifique ; A. Bouabellou, Directeur de thèse Année de publication : 2002 Importance : 75 f. Note générale : 01 Disponible à la salle de recherche
02 Disponibles au magasin de la bibliothèque centraleLangues : Français (fre) Tags : Fer Silicium Silicium de fer RBS diffraction des rayons X Diode Schottky Hétéro jonction Index. décimale : 530 Physique Permalink : https://bu.umc.edu.dz/md/index.php?lvl=notice_display&id=2956 Caractérisation de films de composés Fe Si formés sur Si mono cristallin [texte imprimé] / Amis Rouabhia ; Université Mentouri, Editeur scientifique ; A. Bouabellou, Directeur de thèse . - 2002 . - 75 f.
01 Disponible à la salle de recherche
02 Disponibles au magasin de la bibliothèque centrale
Langues : Français (fre)
Tags : Fer Silicium Silicium de fer RBS diffraction des rayons X Diode Schottky Hétéro jonction Index. décimale : 530 Physique Permalink : https://bu.umc.edu.dz/md/index.php?lvl=notice_display&id=2956 Exemplaires
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