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Auteur Fatima Khelfaoui |
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Titre : Déposition et étude des couches pérovskites pour le photovoltaïque. Type de document : texte imprimé Auteurs : Itidel Belaidi, Auteur ; Nadhir Attaf, Directeur de thèse ; Fatima Khelfaoui, Directeur de thèse Mention d'édition : 07/07/2021 Editeur : جامعة الإخوة منتوري قسنطينة Année de publication : 2021 Importance : 175 f. Format : 30 cm. Note générale : Doctorat 3éme CYCLE LMD.
1 copies imprimées disponibles
Langues : Français (fre) Catégories : Français - Anglais
PhysiqueTags : pérovskites organiques-inorganiques cellules solaires photovoltaïque hétérojonction perovskite organic-inorganic photovoltaic heterojunction البيروفسكايت الخلايا العضوية غير العضوية الخلايا الشمسية الخلايا الكهروضوئية غير المتجانسة Index. décimale : 530 Physique Résumé :
In recent years, hybrid organic-inorganic perovskites have emerged as a new class of semiconductors with very interesting optoelectronic properties for photovoltaic devices. This thesis focuses on the deposition of CH3NH3PbI3 perovskite materials by spin-coating on glass substrates. The effects of the nature of the solvent and the speed of rotation on the morphology of the films and the structure are studied. Two solvents are used:N, N-dimethylformamide (DMF) and a mixture of dimethylsulfoxide (DMSO) with DMF. The rotation speed varies between 700 and 2000 rpm.Scanning electron microscopy (SEM) observations indicate that the films prepared are not continuous with varying morphologies; the films are formed of elongated fibers. The structural characterization of the films revealed that the latter have a tetragonal structure of the prepared perovskite with a preferential orientation towards (110). The optical and electrical characterizations have shown that the CH3NH3PbI3 films deposited by spin coating have good optoelectronic properties. good absorbance in the visible range with an optical gap equal to1.54eV. The electrical characterizations have shown that the CH3NH3PbI3 films prepared are resistive; the thin layers of CH3NH3PbI3 turn out to be very sensitive to several factors: humidity, oxygen, light irradiation, On the other hand, the study of the heterojunction was made by the IV and CV techniques which made it possible to determine the electrical parameters heterojunction.
Note de contenu : Annexes. Diplôme : Doctorat En ligne : ../theses/physique/BEL7831.pdf Format de la ressource électronique : Permalink : index.php?lvl=notice_display&id=11663 Déposition et étude des couches pérovskites pour le photovoltaïque. [texte imprimé] / Itidel Belaidi, Auteur ; Nadhir Attaf, Directeur de thèse ; Fatima Khelfaoui, Directeur de thèse . - 07/07/2021 . - جامعة الإخوة منتوري قسنطينة, 2021 . - 175 f. ; 30 cm.
Doctorat 3éme CYCLE LMD.
1 copies imprimées disponibles
Langues : Français (fre)
Catégories : Français - Anglais
PhysiqueTags : pérovskites organiques-inorganiques cellules solaires photovoltaïque hétérojonction perovskite organic-inorganic photovoltaic heterojunction البيروفسكايت الخلايا العضوية غير العضوية الخلايا الشمسية الخلايا الكهروضوئية غير المتجانسة Index. décimale : 530 Physique Résumé :
In recent years, hybrid organic-inorganic perovskites have emerged as a new class of semiconductors with very interesting optoelectronic properties for photovoltaic devices. This thesis focuses on the deposition of CH3NH3PbI3 perovskite materials by spin-coating on glass substrates. The effects of the nature of the solvent and the speed of rotation on the morphology of the films and the structure are studied. Two solvents are used:N, N-dimethylformamide (DMF) and a mixture of dimethylsulfoxide (DMSO) with DMF. The rotation speed varies between 700 and 2000 rpm.Scanning electron microscopy (SEM) observations indicate that the films prepared are not continuous with varying morphologies; the films are formed of elongated fibers. The structural characterization of the films revealed that the latter have a tetragonal structure of the prepared perovskite with a preferential orientation towards (110). The optical and electrical characterizations have shown that the CH3NH3PbI3 films deposited by spin coating have good optoelectronic properties. good absorbance in the visible range with an optical gap equal to1.54eV. The electrical characterizations have shown that the CH3NH3PbI3 films prepared are resistive; the thin layers of CH3NH3PbI3 turn out to be very sensitive to several factors: humidity, oxygen, light irradiation, On the other hand, the study of the heterojunction was made by the IV and CV techniques which made it possible to determine the electrical parameters heterojunction.
Note de contenu : Annexes. Diplôme : Doctorat En ligne : ../theses/physique/BEL7831.pdf Format de la ressource électronique : Permalink : index.php?lvl=notice_display&id=11663 Exemplaires (1)
Code-barres Cote Support Localisation Section Disponibilité BEL/7831 BEL/7831 Thèse Bibliothèque principale Thèses Disponible "Etude du mécanisme de croissance des couches a-Si :H élaborées par pulvérisation cathodique" / Fatima Khelfaoui
Titre : "Etude du mécanisme de croissance des couches a-Si :H élaborées par pulvérisation cathodique" : interaction plasma-substrat Type de document : texte imprimé Auteurs : Fatima Khelfaoui, Auteur ; Mohamed Salah Aida, Directeur de thèse Editeur : constantine [Algérie] : Université Constantine 1 Année de publication : 2014 Importance : 81 f. Format : 30 cm. Note générale : 2 copies imprimées disponibles
Langues : Français (fre) Catégories : Français - Anglais
PhysiqueTags : a-Si :H, pulvérisation cathodique, plasma, mécanisme de croissance.
a- Si :H, sputtering, plasma, growth mechanism.
سیلیسیوم الامبلور المھدرج ، الرش المھبطي ،بلازما،آلیة نمو.Index. décimale : 530 Physique Résumé : "The present work deals with the study of interaction plasma-substrate effect on
sputtered a-Si :H films growth mechanism. The experimental part was carried by varying two
parameters : the RF power of electric discharge and substrate nature.
The caracterization by scanning electronic microscopy of samples prepared on glass
substrate at substrate temperature of 200°C, revealed a change of the surface morpholy with
the variation of RF power. Indeed, a polycristallization was detected on sample surface
deposited with higher power 400W. This result was confirmed by transmission electronic
microscopy. The infrared spectroscopy (FTIR) showed a decrease of hydrogen content with
increasing RF power. Besides this, an increase of material densification was detected by UV
visible spectroscopy.
On the other hand, the caractrization by SEM of the deposited films on various
substrates with RF power fixed at 400W and substrate temperature at 200°C, showed a light
surface roughness of the film prepared on single-crystalline silicon sustrate. However, the
surface of film deposited on aluminum subtrate remains amorphous.
In order to explain these results, we proceeded to the study of the plasma by three
approaches : i) by calculating the strength generated by the impact of the plasma particules on
the growing film according to pressure and to RF power, ii) by developping a physical model
which allows to calculate the energy distribution of argon ions reaching the substrate, iii) we
have also proposed a numerical model which allows temperature calculation of growing film
with the deposition time.
This study showed that the temperature of growing film is the most controlling
parameter of a-Si :H films growth mechanism."
Diplôme : Doctorat en sciences En ligne : ../theses/physique/KHE6557.pdf Format de la ressource électronique : Permalink : index.php?lvl=notice_display&id=9672 "Etude du mécanisme de croissance des couches a-Si :H élaborées par pulvérisation cathodique" : interaction plasma-substrat [texte imprimé] / Fatima Khelfaoui, Auteur ; Mohamed Salah Aida, Directeur de thèse . - constantine [Algérie] : Université Constantine 1, 2014 . - 81 f. ; 30 cm.
2 copies imprimées disponibles
Langues : Français (fre)
Catégories : Français - Anglais
PhysiqueTags : a-Si :H, pulvérisation cathodique, plasma, mécanisme de croissance.
a- Si :H, sputtering, plasma, growth mechanism.
سیلیسیوم الامبلور المھدرج ، الرش المھبطي ،بلازما،آلیة نمو.Index. décimale : 530 Physique Résumé : "The present work deals with the study of interaction plasma-substrate effect on
sputtered a-Si :H films growth mechanism. The experimental part was carried by varying two
parameters : the RF power of electric discharge and substrate nature.
The caracterization by scanning electronic microscopy of samples prepared on glass
substrate at substrate temperature of 200°C, revealed a change of the surface morpholy with
the variation of RF power. Indeed, a polycristallization was detected on sample surface
deposited with higher power 400W. This result was confirmed by transmission electronic
microscopy. The infrared spectroscopy (FTIR) showed a decrease of hydrogen content with
increasing RF power. Besides this, an increase of material densification was detected by UV
visible spectroscopy.
On the other hand, the caractrization by SEM of the deposited films on various
substrates with RF power fixed at 400W and substrate temperature at 200°C, showed a light
surface roughness of the film prepared on single-crystalline silicon sustrate. However, the
surface of film deposited on aluminum subtrate remains amorphous.
In order to explain these results, we proceeded to the study of the plasma by three
approaches : i) by calculating the strength generated by the impact of the plasma particules on
the growing film according to pressure and to RF power, ii) by developping a physical model
which allows to calculate the energy distribution of argon ions reaching the substrate, iii) we
have also proposed a numerical model which allows temperature calculation of growing film
with the deposition time.
This study showed that the temperature of growing film is the most controlling
parameter of a-Si :H films growth mechanism."
Diplôme : Doctorat en sciences En ligne : ../theses/physique/KHE6557.pdf Format de la ressource électronique : Permalink : index.php?lvl=notice_display&id=9672 Exemplaires (1)
Code-barres Cote Support Localisation Section Disponibilité KHE/6557 KHE/6557 Thèse Bibliothèque principale Thèses Disponible
Titre : Influence d'une source de chaleur sur la distribution thermique dans un milieu semi-conducteur fini-incidence sur la conversion photovolta?que Type de document : texte imprimé Auteurs : Fatima Khelfaoui ; Univ. de Constantine, Éditeur scientifique ; Mohamed Remram, Directeur de thèse Année de publication : 2000 Importance : 62 f. Format : 30 cm Note générale : 01 exp. disponible dans la salle de recherche
02 exp. disponible au magasin de la bibliothèque centraleLangues : Français (fre) Catégories : Français - Anglais
ElectroniqueTags : température Conductivité Traitement thermique Cellule solaire Silicium poly -cristallin Index. décimale : 621 Electronique Permalink : index.php?lvl=notice_display&id=2547 Influence d'une source de chaleur sur la distribution thermique dans un milieu semi-conducteur fini-incidence sur la conversion photovolta?que [texte imprimé] / Fatima Khelfaoui ; Univ. de Constantine, Éditeur scientifique ; Mohamed Remram, Directeur de thèse . - 2000 . - 62 f. ; 30 cm.
01 exp. disponible dans la salle de recherche
02 exp. disponible au magasin de la bibliothèque centrale
Langues : Français (fre)
Catégories : Français - Anglais
ElectroniqueTags : température Conductivité Traitement thermique Cellule solaire Silicium poly -cristallin Index. décimale : 621 Electronique Permalink : index.php?lvl=notice_display&id=2547 Exemplaires (1)
Code-barres Cote Support Localisation Section Disponibilité KHE/3376 KHE/3376 Thèse Bibliothèque principale Thèses Disponible
