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Partager le résultat de cette recherche Interroger des sources externesElaboration des films minces d’oxyde de Zinc par evaporation et par pulverisation magnetron et etude de leurs proprietes / Noua Bouhssira
Titre : Elaboration des films minces d’oxyde de Zinc par evaporation et par pulverisation magnetron et etude de leurs proprietes Type de document : texte imprimé Auteurs : Noua Bouhssira, Auteur ; Mohamed Salah Aida, Directeur de thèse Editeur : constantine [Algérie] : Université Constantine 1 Année de publication : 2013 Importance : 120 f. Format : 30 cm. Note générale : 2 copies imprimées disponibles Langues : Français (fre) Catégories : Français - Anglais
PhysiqueTags : thin film ZnO structure morphology photoluminescence conductivity nano rode couche mince morphologie conductivité الشرائح الرقیقة أكسید الزنك البنیة الهیئة لمعان ضوئي الموصلیة الانابیب النانونیة. Index. décimale : 530 Physique Résumé : Zinc oxide (ZnO) is direct wide band gap semiconductor (3.37 eV) with many interesting properties (structural, morphological, optical, electric, …). A wide range of applications makes it one of the most studied materials in the past decade.
In this research, we prepared by magnetron sputtering and thermal evaporation of thin layers of zinc oxide. In the first method of this work we deposited layers from a ZnO powder to study the influence of annealing temperature in the range from 2 hours to 6 hours on the structural properties of the films. While the second method, ZnO films were prepared from metallic Zn, and the influence of thermal annealing and annealing time on the structural, morphological, optical and electrical properties is the goal of this work.
These layers are transparent, and an electric conductivity with a semiconductor n-type nature, the structure has a hexagonal wurtzite type with a preferential orientation along the axis (002). The morphology of these layers indicates the presence of nano rodes.Diplôme : Doctorat en sciences En ligne : ../theses/physique/BOU6478.pdf Format de la ressource électronique : Permalink : index.php?lvl=notice_display&id=9523 Elaboration des films minces d’oxyde de Zinc par evaporation et par pulverisation magnetron et etude de leurs proprietes [texte imprimé] / Noua Bouhssira, Auteur ; Mohamed Salah Aida, Directeur de thèse . - constantine [Algérie] : Université Constantine 1, 2013 . - 120 f. ; 30 cm.
2 copies imprimées disponibles
Langues : Français (fre)
Catégories : Français - Anglais
PhysiqueTags : thin film ZnO structure morphology photoluminescence conductivity nano rode couche mince morphologie conductivité الشرائح الرقیقة أكسید الزنك البنیة الهیئة لمعان ضوئي الموصلیة الانابیب النانونیة. Index. décimale : 530 Physique Résumé : Zinc oxide (ZnO) is direct wide band gap semiconductor (3.37 eV) with many interesting properties (structural, morphological, optical, electric, …). A wide range of applications makes it one of the most studied materials in the past decade.
In this research, we prepared by magnetron sputtering and thermal evaporation of thin layers of zinc oxide. In the first method of this work we deposited layers from a ZnO powder to study the influence of annealing temperature in the range from 2 hours to 6 hours on the structural properties of the films. While the second method, ZnO films were prepared from metallic Zn, and the influence of thermal annealing and annealing time on the structural, morphological, optical and electrical properties is the goal of this work.
These layers are transparent, and an electric conductivity with a semiconductor n-type nature, the structure has a hexagonal wurtzite type with a preferential orientation along the axis (002). The morphology of these layers indicates the presence of nano rodes.Diplôme : Doctorat en sciences En ligne : ../theses/physique/BOU6478.pdf Format de la ressource électronique : Permalink : index.php?lvl=notice_display&id=9523 Exemplaires (1)
Code-barres Cote Support Localisation Section Disponibilité BOU/6478 BOU/6478 Thèse Bibliothèque principale Thèses Disponible Documents numériques
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Titre : Réalisation de dispositifs microélectroniques à base de films organiques Type de document : texte imprimé Auteurs : Ibrahim Missoum, Auteur ; Abla Chaker, Directeur de thèse Editeur : جامعة الإخوة منتوري قسنطينة Année de publication : 2016 Importance : 149 f. Format : 30 cm. Note générale : 2 copies imprimées disponibles
Langues : Français (fre) Catégories : Français - Anglais
PhysiqueTags : MetalPhthalocyanine film mince diode Schottky MgPc microélectronique,solaire-photovoltaïque thin film Schottky diode MPc microelectronic solarphotovoltaic رقائق مواد عضوية cPM صمامات شوتكي طرق التشخيص قياسات التيار الكهربائي مقادير
إلكترونية وفوطوضوئية الميكروالكترونيك العضوية و الخلايا الشمسيةIndex. décimale : 530 Physique Résumé : This thesis focuses on the realization of microelectronic devices based on organic materials.
In order to develop next generation devices those have applications in the topic of solarphotovoltaic energy. Organic semiconductors based MetalPhthalocyanine appear as an alternative to inorganic semiconductors and represent a promising technology for economic and environmental issues. Our research involves the fabrication and characterization of devices based MetalPhthalocyanine (MPc). We have set up an experimental protocol of
microelectronic devices (Schottky diodes) based MPc achievement. In the first step, we make thin films based on MgPc, ZnPc, AlPc-Cl and AlPc-H on several substrates glass, n-GaAs, InP-p, n-Si and p-Si. The selected thin films deposited on glass substrate are then investigated by X-ray pattern, UV-VIS-IR, Raman diffusion, AFM-SEM observation means. In the second step, the selected layers deposited on n-GaAs, InP-p, n-Si and p-Si are the tools of the organic device fabrication. Our fabricated devices form the Schottky diodes and the microelectronic properties are then studied. The preparation of thin films and fabrication of Schottky diodes are achieved by the spin-coating and thermal evaporation under vacuum techniques. At room temperature, the achieved electrical measurements of MPC organic Schottky diodes are current-voltage in dark-light and capacitance-voltage under dark condition. Based on physical properties study of thin layers (MgPc, ZnPc and AlPc-Cl) deposited on glass, we confirm the
formation of MPc phase and the nanogranular structure of such layers G~ 1 nm. Besides the films are transparent semiconductors owing an indirect wide band gap of 2.8 eV and present vibrational modes. MPc layers have a smooth (RMS ~1 0 nm) surface morphology and nanograins grow along z-axis. As mentioned earlier, we have made 12 kinds of organic devices. The measurement of the (I-V) characteristic under light and dark, and the (C-V) and
(G / ω-V) measurements allow extracting many microelectronic and photovoltaic parameters such as ideality factor, series resistance, barrier height, rectifying parameter, interface density, open circuit voltage, short circuit current, photosensitivity, fill factor, efficiency, donor and acceptor carrier densities and potential in built. The well known approximation methods of parameters calculation Cheung-Cheung and Norde are used. Conduction mechanisms of such organic structures are widely investigated in one hand and effect of substrate and organic layer on electronic properties is also largely studied in other hand. The Schottky diodes based on MgPc have shown excellent performance for different structures (Ag/MgPc/n-Si/Au, Ag/MgPc/p-InP/Au-Zn and Ag/MgPc/n-GaAs/Au-Ge). Consequently, the organic MgPc device is the best candidate for applications in microelectronics and the solar photovoltaic
compared to ZnPc, AlPc-Cl and AlPc-H.
Diplôme : Doctorat en sciences En ligne : ../theses/physique/MIS6963.pdf Format de la ressource électronique : Permalink : index.php?lvl=notice_display&id=10355 Réalisation de dispositifs microélectroniques à base de films organiques [texte imprimé] / Ibrahim Missoum, Auteur ; Abla Chaker, Directeur de thèse . - جامعة الإخوة منتوري قسنطينة, 2016 . - 149 f. ; 30 cm.
2 copies imprimées disponibles
Langues : Français (fre)
Catégories : Français - Anglais
PhysiqueTags : MetalPhthalocyanine film mince diode Schottky MgPc microélectronique,solaire-photovoltaïque thin film Schottky diode MPc microelectronic solarphotovoltaic رقائق مواد عضوية cPM صمامات شوتكي طرق التشخيص قياسات التيار الكهربائي مقادير
إلكترونية وفوطوضوئية الميكروالكترونيك العضوية و الخلايا الشمسيةIndex. décimale : 530 Physique Résumé : This thesis focuses on the realization of microelectronic devices based on organic materials.
In order to develop next generation devices those have applications in the topic of solarphotovoltaic energy. Organic semiconductors based MetalPhthalocyanine appear as an alternative to inorganic semiconductors and represent a promising technology for economic and environmental issues. Our research involves the fabrication and characterization of devices based MetalPhthalocyanine (MPc). We have set up an experimental protocol of
microelectronic devices (Schottky diodes) based MPc achievement. In the first step, we make thin films based on MgPc, ZnPc, AlPc-Cl and AlPc-H on several substrates glass, n-GaAs, InP-p, n-Si and p-Si. The selected thin films deposited on glass substrate are then investigated by X-ray pattern, UV-VIS-IR, Raman diffusion, AFM-SEM observation means. In the second step, the selected layers deposited on n-GaAs, InP-p, n-Si and p-Si are the tools of the organic device fabrication. Our fabricated devices form the Schottky diodes and the microelectronic properties are then studied. The preparation of thin films and fabrication of Schottky diodes are achieved by the spin-coating and thermal evaporation under vacuum techniques. At room temperature, the achieved electrical measurements of MPC organic Schottky diodes are current-voltage in dark-light and capacitance-voltage under dark condition. Based on physical properties study of thin layers (MgPc, ZnPc and AlPc-Cl) deposited on glass, we confirm the
formation of MPc phase and the nanogranular structure of such layers G~ 1 nm. Besides the films are transparent semiconductors owing an indirect wide band gap of 2.8 eV and present vibrational modes. MPc layers have a smooth (RMS ~1 0 nm) surface morphology and nanograins grow along z-axis. As mentioned earlier, we have made 12 kinds of organic devices. The measurement of the (I-V) characteristic under light and dark, and the (C-V) and
(G / ω-V) measurements allow extracting many microelectronic and photovoltaic parameters such as ideality factor, series resistance, barrier height, rectifying parameter, interface density, open circuit voltage, short circuit current, photosensitivity, fill factor, efficiency, donor and acceptor carrier densities and potential in built. The well known approximation methods of parameters calculation Cheung-Cheung and Norde are used. Conduction mechanisms of such organic structures are widely investigated in one hand and effect of substrate and organic layer on electronic properties is also largely studied in other hand. The Schottky diodes based on MgPc have shown excellent performance for different structures (Ag/MgPc/n-Si/Au, Ag/MgPc/p-InP/Au-Zn and Ag/MgPc/n-GaAs/Au-Ge). Consequently, the organic MgPc device is the best candidate for applications in microelectronics and the solar photovoltaic
compared to ZnPc, AlPc-Cl and AlPc-H.
Diplôme : Doctorat en sciences En ligne : ../theses/physique/MIS6963.pdf Format de la ressource électronique : Permalink : index.php?lvl=notice_display&id=10355 Exemplaires (1)
Code-barres Cote Support Localisation Section Disponibilité MIS/6963 MIS/6963 Thèse Bibliothèque principale Thèses Disponible
Titre : Etude des propriétés des couches minces de carbure de silicium amorphe : Application couche antireflet et passivation Type de document : texte imprimé Auteurs : Saloua Merazga, Auteur ; Aissa Keffous, Directeur de thèse ; Kamel Mirouh, Directeur de thèse Editeur : Constantine : Université Mentouri Constantine Année de publication : 2015 Importance : 146 f. Format : 30 cm. Note générale : 2 copies imprimées disponibles
Langues : Français (fre) Catégories : Français - Anglais
PhysiqueTags : carbure de silicium antireflet passivation couche mince silicon carbide antireflection Thin film السيليكون الكربوني المضادة للانعكاس تخميل السطح الشرائح الرقيقة Index. décimale : 530 Physique Résumé : Thin films of hydrogenated amorphous silicon carbide (a-SiC:H) are long time used in solar cells based on silicon. Various applications can be considered an example is cited as:
antireflection coating for solar cells based on hydrogenated amorphous silicon (a-Si: H) and dielectric layers for crystalline silicon (c-Si) for surface passivation. These layers have a good optical structural, electrical property and can provide exceptional surface passivation, essentially for crystalline silicon solar cells with high efficiency. This thesis reflects a fundamental study of the properties of the a-SiC: H layers deposited by sputtering and the a-Si1-x (CH3)x:H layers prepared by RF-PECVD. The deposition conditions were optimized in conjunction with the structural characterization, optical, electrical. A high minority carrier lifetime has reached as 121 μs for a 5% carbon content.
In addition, an optical gap can be increased by 1.91 eV to 2.10 eV by varying the deposition temperature and 1.97 to 2.41 eV according to the carbon content with a refractive index (n) adjustable of 1.57 to 2.61. Thin films a-SiC:H with 5% of carbon has been used for passivation of a crystalline silicon solar cell type n+pSi.Diplôme : Doctorat En ligne : ../theses/physique/MER6774.pdf Format de la ressource électronique : Permalink : index.php?lvl=notice_display&id=9836 Etude des propriétés des couches minces de carbure de silicium amorphe : Application couche antireflet et passivation [texte imprimé] / Saloua Merazga, Auteur ; Aissa Keffous, Directeur de thèse ; Kamel Mirouh, Directeur de thèse . - Constantine : Université Mentouri Constantine, 2015 . - 146 f. ; 30 cm.
2 copies imprimées disponibles
Langues : Français (fre)
Catégories : Français - Anglais
PhysiqueTags : carbure de silicium antireflet passivation couche mince silicon carbide antireflection Thin film السيليكون الكربوني المضادة للانعكاس تخميل السطح الشرائح الرقيقة Index. décimale : 530 Physique Résumé : Thin films of hydrogenated amorphous silicon carbide (a-SiC:H) are long time used in solar cells based on silicon. Various applications can be considered an example is cited as:
antireflection coating for solar cells based on hydrogenated amorphous silicon (a-Si: H) and dielectric layers for crystalline silicon (c-Si) for surface passivation. These layers have a good optical structural, electrical property and can provide exceptional surface passivation, essentially for crystalline silicon solar cells with high efficiency. This thesis reflects a fundamental study of the properties of the a-SiC: H layers deposited by sputtering and the a-Si1-x (CH3)x:H layers prepared by RF-PECVD. The deposition conditions were optimized in conjunction with the structural characterization, optical, electrical. A high minority carrier lifetime has reached as 121 μs for a 5% carbon content.
In addition, an optical gap can be increased by 1.91 eV to 2.10 eV by varying the deposition temperature and 1.97 to 2.41 eV according to the carbon content with a refractive index (n) adjustable of 1.57 to 2.61. Thin films a-SiC:H with 5% of carbon has been used for passivation of a crystalline silicon solar cell type n+pSi.Diplôme : Doctorat En ligne : ../theses/physique/MER6774.pdf Format de la ressource électronique : Permalink : index.php?lvl=notice_display&id=9836 Exemplaires (1)
Code-barres Cote Support Localisation Section Disponibilité MER/6774 MER/6774 Thèse Bibliothèque principale Thèses Disponible
Titre : Élaboration et caractérisation d’un dépôt de couches minces d’oxyde de zinc par spray pyrolyse Type de document : texte imprimé Auteurs : Salah Boulmelh, Auteur ; Lynda Saci, Directeur de thèse Editeur : جامعة الإخوة منتوري قسنطينة Année de publication : 2015 Importance : 103 f. Format : 30 cm. Note générale : 2 copies imprimées disponibles
Langues : Français (fre) Catégories : Français - Anglais
ElectroniqueTags : Couche mince oxyde de zinc (ZnO) Spray Pyrolyses Diffraction rayons X Spectroscopie Raman UV-visible Méthode des quatre pointes Thin film zinc oxide (ZnO) Spray Pyrolysis X-ray diffraction Raman
spectroscopy four-points method الشرائح الرقيقة أكسيد الزنك الرش البروليزي الأشعة السينية مطيافية رامان أربع نقاط UV-VISIndex. décimale : 621 Electronique Résumé : The proposed topic in the context of this thesis focuses on the study, elaboration and characterization of pure zinc oxide (ZnO) thin films deposited on glass substrates by pyrolytic spraying technique mostly called SPRAY PYROLYSIS.
It's the effect of temperature and molarities on the physicochemical properties of ZnO thin films obtained by the spray process that interest us in this study.
Note that these deposits were developed at various temperatures (300 to 450°C) and molarities (0.05 to 0.4 M), using Zn (C2 H3 O2)2 • 2H2O an organometallic precursor.
The structural characterization by X-ray diffraction and Raman spectroscopy showed that the deposited films have a hexagonal polycrystalline wurtzite type structure whose
preferential crystallographic orientation is obtained according to the (100) plane.
Thus, we found an average crystallite size between 18 and 30 nm.
The optical characterization of the films was carried out using the UV-Visible spectroscopy in the spectral range from 200 to 800 nm. The results shows, that the transparence films are around 15 to 95%. The transmittance spectra analysis allowed us to determine the gap (3.16 to 3.3 eV) and the disorder of our estimated films (65.8 meV). These results are consistent with those obtained in the literature. We also conducted an electrical characterization of our samples by the four-point method. The deducted values of the pure zinc oxide electric conductivity are ranging from 8.15 to 80 (Ω.cm)
-1 at various temperatures and molarities. Thus, the deposited films have more conductive character for the deposit of ZnO in M=0.2 M and at 350°C.
In conclusion, the results show that films with low molarities (≤0,2 M) can be used as buffer layers in photovoltaic cells, while those with high molarities (˃0.2 M) are more promoters candidates for applications as gas sensors.
Diplôme : Magistère En ligne : ../theses/electronique/BOU6797.pdf Permalink : index.php?lvl=notice_display&id=10036 Élaboration et caractérisation d’un dépôt de couches minces d’oxyde de zinc par spray pyrolyse [texte imprimé] / Salah Boulmelh, Auteur ; Lynda Saci, Directeur de thèse . - جامعة الإخوة منتوري قسنطينة, 2015 . - 103 f. ; 30 cm.
2 copies imprimées disponibles
Langues : Français (fre)
Catégories : Français - Anglais
ElectroniqueTags : Couche mince oxyde de zinc (ZnO) Spray Pyrolyses Diffraction rayons X Spectroscopie Raman UV-visible Méthode des quatre pointes Thin film zinc oxide (ZnO) Spray Pyrolysis X-ray diffraction Raman
spectroscopy four-points method الشرائح الرقيقة أكسيد الزنك الرش البروليزي الأشعة السينية مطيافية رامان أربع نقاط UV-VISIndex. décimale : 621 Electronique Résumé : The proposed topic in the context of this thesis focuses on the study, elaboration and characterization of pure zinc oxide (ZnO) thin films deposited on glass substrates by pyrolytic spraying technique mostly called SPRAY PYROLYSIS.
It's the effect of temperature and molarities on the physicochemical properties of ZnO thin films obtained by the spray process that interest us in this study.
Note that these deposits were developed at various temperatures (300 to 450°C) and molarities (0.05 to 0.4 M), using Zn (C2 H3 O2)2 • 2H2O an organometallic precursor.
The structural characterization by X-ray diffraction and Raman spectroscopy showed that the deposited films have a hexagonal polycrystalline wurtzite type structure whose
preferential crystallographic orientation is obtained according to the (100) plane.
Thus, we found an average crystallite size between 18 and 30 nm.
The optical characterization of the films was carried out using the UV-Visible spectroscopy in the spectral range from 200 to 800 nm. The results shows, that the transparence films are around 15 to 95%. The transmittance spectra analysis allowed us to determine the gap (3.16 to 3.3 eV) and the disorder of our estimated films (65.8 meV). These results are consistent with those obtained in the literature. We also conducted an electrical characterization of our samples by the four-point method. The deducted values of the pure zinc oxide electric conductivity are ranging from 8.15 to 80 (Ω.cm)
-1 at various temperatures and molarities. Thus, the deposited films have more conductive character for the deposit of ZnO in M=0.2 M and at 350°C.
In conclusion, the results show that films with low molarities (≤0,2 M) can be used as buffer layers in photovoltaic cells, while those with high molarities (˃0.2 M) are more promoters candidates for applications as gas sensors.
Diplôme : Magistère En ligne : ../theses/electronique/BOU6797.pdf Permalink : index.php?lvl=notice_display&id=10036 Exemplaires (1)
Code-barres Cote Support Localisation Section Disponibilité BOU/6797 BOU/6797 Thèse Bibliothèque principale Thèses Disponible
Titre : Etude des propriétés structurales et optiques de nano-cristaux semi-conducteurs à grand gap synthétisés par voie sol-gel modifiée Type de document : texte imprimé Auteurs : Soumia Haya, Auteur ; Ouahiba Halimi, Directeur de thèse Editeur : Constantine : Université Mentouri Constantine Année de publication : 2010 Importance : 99 f. Format : 30 cm. Note générale : 2 copies imprimées disponibles
Langues : Français (fre) Catégories : Français - Anglais
PhysiqueTags : Couches Minces ZnO,TiO2 irradiation UV diffraction des rayons X absorption optique photoluminescence Sol-Gel Dip-Cointing Thin Film UV light X-ray diffraction Optical absorption Photoluminescence امتصاص الضوئى UV الاشعة RX الاشعة السینیة TiO و 2 ZnO رقائق 2
. Dip – Coating الانبعاث الفوتوضوئى طریقة صول الجالIndex. décimale : 530 Physique Résumé : This thesis concerns the development and characterization of thin films of ZnO and TiO2, which were conducted at temperatures close to room temperature using the sol-gel method with a deposition technique ""Dip Coating."" The Both
samples were prepared by two different solutions: the first is to add the precursor of zinc acetate dihydrate and the solvent 2-methoxyethanol with monoethanolamine as a stabilizer, while the second is to dissolve the titaniaume IV propoxide in ethanol (solvent) with the addition of HCl as catalyst.
Structural characterization of thin films of ZnO and TiO2 was carried out by X-ray diffraction. It confirmed first, the formation of crystallites for both samples irradiated by UV light for 84 hours and 155 hours in the case of ZnO and TiO2, respectively, and secondly to determine their crystal structures and their small size
does not exceed a few of nanometers.
Characterization by measurement of optical absorption in the UV – visible domain, showed a shift of absorption edge for ZnO and TiO2 layers to high energies (short wavelengths) compared to that of bulk crystal of the latter two. This
discrepancy is due to quantum confinement effect induced by size reduction.
A second optical characterization by photoluminescence measurement showed that the samples prepared exhibit intense emission bands in the visible and near UV.
This observation led us to practical applications in area of optic and photovoltaic.
Diplôme : Magistère En ligne : ../theses/physique/HAY6698.pdf Format de la ressource électronique : Permalink : index.php?lvl=notice_display&id=9925 Etude des propriétés structurales et optiques de nano-cristaux semi-conducteurs à grand gap synthétisés par voie sol-gel modifiée [texte imprimé] / Soumia Haya, Auteur ; Ouahiba Halimi, Directeur de thèse . - Constantine : Université Mentouri Constantine, 2010 . - 99 f. ; 30 cm.
2 copies imprimées disponibles
Langues : Français (fre)
Catégories : Français - Anglais
PhysiqueTags : Couches Minces ZnO,TiO2 irradiation UV diffraction des rayons X absorption optique photoluminescence Sol-Gel Dip-Cointing Thin Film UV light X-ray diffraction Optical absorption Photoluminescence امتصاص الضوئى UV الاشعة RX الاشعة السینیة TiO و 2 ZnO رقائق 2
. Dip – Coating الانبعاث الفوتوضوئى طریقة صول الجالIndex. décimale : 530 Physique Résumé : This thesis concerns the development and characterization of thin films of ZnO and TiO2, which were conducted at temperatures close to room temperature using the sol-gel method with a deposition technique ""Dip Coating."" The Both
samples were prepared by two different solutions: the first is to add the precursor of zinc acetate dihydrate and the solvent 2-methoxyethanol with monoethanolamine as a stabilizer, while the second is to dissolve the titaniaume IV propoxide in ethanol (solvent) with the addition of HCl as catalyst.
Structural characterization of thin films of ZnO and TiO2 was carried out by X-ray diffraction. It confirmed first, the formation of crystallites for both samples irradiated by UV light for 84 hours and 155 hours in the case of ZnO and TiO2, respectively, and secondly to determine their crystal structures and their small size
does not exceed a few of nanometers.
Characterization by measurement of optical absorption in the UV – visible domain, showed a shift of absorption edge for ZnO and TiO2 layers to high energies (short wavelengths) compared to that of bulk crystal of the latter two. This
discrepancy is due to quantum confinement effect induced by size reduction.
A second optical characterization by photoluminescence measurement showed that the samples prepared exhibit intense emission bands in the visible and near UV.
This observation led us to practical applications in area of optic and photovoltaic.
Diplôme : Magistère En ligne : ../theses/physique/HAY6698.pdf Format de la ressource électronique : Permalink : index.php?lvl=notice_display&id=9925 Exemplaires (1)
Code-barres Cote Support Localisation Section Disponibilité HAY/6698 HAY/6698 Thèse Bibliothèque principale Thèses Disponible
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