| Titre : |
Etude des propriétés des couches minces de carbure de silicium amorphe : Application couche antireflet et passivation |
| Type de document : |
texte imprimé |
| Auteurs : |
Saloua Merazga, Auteur ; Aissa Keffous, Directeur de thèse ; Kamel Mirouh, Directeur de thèse |
| Editeur : |
Constantine : Université Mentouri Constantine |
| Année de publication : |
2015 |
| Importance : |
146 f. |
| Format : |
30 cm. |
| Note générale : |
2 copies imprimées disponibles
|
| Langues : |
Français (fre) |
| Catégories : |
Français - Anglais
Physique
|
| Tags : |
carbure de silicium antireflet passivation couche mince silicon carbide antireflection Thin film السيليكون الكربوني المضادة للانعكاس تخميل السطح الشرائح الرقيقة |
| Index. décimale : |
530 Physique |
| Résumé : |
Thin films of hydrogenated amorphous silicon carbide (a-SiC:H) are long time used in solar cells based on silicon. Various applications can be considered an example is cited as:
antireflection coating for solar cells based on hydrogenated amorphous silicon (a-Si: H) and dielectric layers for crystalline silicon (c-Si) for surface passivation. These layers have a good optical structural, electrical property and can provide exceptional surface passivation, essentially for crystalline silicon solar cells with high efficiency. This thesis reflects a fundamental study of the properties of the a-SiC: H layers deposited by sputtering and the a-Si1-x (CH3)x:H layers prepared by RF-PECVD. The deposition conditions were optimized in conjunction with the structural characterization, optical, electrical. A high minority carrier lifetime has reached as 121 μs for a 5% carbon content.
In addition, an optical gap can be increased by 1.91 eV to 2.10 eV by varying the deposition temperature and 1.97 to 2.41 eV according to the carbon content with a refractive index (n) adjustable of 1.57 to 2.61. Thin films a-SiC:H with 5% of carbon has been used for passivation of a crystalline silicon solar cell type n+pSi. |
| Diplôme : |
Doctorat |
| En ligne : |
../theses/physique/MER6774.pdf |
| Format de la ressource électronique : |
pdf |
| Permalink : |
index.php?lvl=notice_display&id=9836 |
Etude des propriétés des couches minces de carbure de silicium amorphe : Application couche antireflet et passivation [texte imprimé] / Saloua Merazga, Auteur ; Aissa Keffous, Directeur de thèse ; Kamel Mirouh, Directeur de thèse . - Constantine : Université Mentouri Constantine, 2015 . - 146 f. ; 30 cm. 2 copies imprimées disponibles
Langues : Français ( fre)
| Catégories : |
Français - Anglais
Physique
|
| Tags : |
carbure de silicium antireflet passivation couche mince silicon carbide antireflection Thin film السيليكون الكربوني المضادة للانعكاس تخميل السطح الشرائح الرقيقة |
| Index. décimale : |
530 Physique |
| Résumé : |
Thin films of hydrogenated amorphous silicon carbide (a-SiC:H) are long time used in solar cells based on silicon. Various applications can be considered an example is cited as:
antireflection coating for solar cells based on hydrogenated amorphous silicon (a-Si: H) and dielectric layers for crystalline silicon (c-Si) for surface passivation. These layers have a good optical structural, electrical property and can provide exceptional surface passivation, essentially for crystalline silicon solar cells with high efficiency. This thesis reflects a fundamental study of the properties of the a-SiC: H layers deposited by sputtering and the a-Si1-x (CH3)x:H layers prepared by RF-PECVD. The deposition conditions were optimized in conjunction with the structural characterization, optical, electrical. A high minority carrier lifetime has reached as 121 μs for a 5% carbon content.
In addition, an optical gap can be increased by 1.91 eV to 2.10 eV by varying the deposition temperature and 1.97 to 2.41 eV according to the carbon content with a refractive index (n) adjustable of 1.57 to 2.61. Thin films a-SiC:H with 5% of carbon has been used for passivation of a crystalline silicon solar cell type n+pSi. |
| Diplôme : |
Doctorat |
| En ligne : |
../theses/physique/MER6774.pdf |
| Format de la ressource électronique : |
pdf |
| Permalink : |
index.php?lvl=notice_display&id=9836 |
|
Affiner la recherche Interroger des sources externesElaboration et étude par microscopie électronique à transmission en coupes transversales de l'influence des traitements thermiques sur les interfaces Cr/Si et le silicium amorphe en couches minces / Kamel Mirouh
