5 résultat(s) recherche sur le tag 'FTIR'    

Contribution au Développement des Matériaux Nano-Composites à Base de ZnO et Polymère Etude Structural et Optique / Abdellah Elkaiem  

Public ISBD Titre : Contribution au Développement des Matériaux Nano-Composites à Base de ZnO et Polymère Etude Structural et Optique Type de document : texte imprimé Auteurs : Abdellah Elkaiem, Auteur ; Abdelhamid Chari, Directeur de thèse Editeur : Constantine : Université Mentouri Constantine Année de publication : 2015 Importance : 87 f. Format : 30 cm. Note générale : 2 copies imprimées disponibles Langues : Français (fre) Catégories : Français - Anglais Physique Tags : Semi-conducteurs  ZnO  nano poudres  dope  XRD  FTIR  ZnAl2O4 Index. décimale : 530 Physique Résumé : In this work, we have prepared the Nano powder and thin films of ZnO pure and doped Al with ( 5%,7%) by sol-gel technique and have annealed at (450°C ,750°C). then we analyzed the specimens by X rays diffraction and UV-visible and IR. the structural characteristics of the specimens analyzed by X rays diffraction that confirm the formation of hexagonal structure of ZnO of the type (wûrtzite) with preferential direction for (101). the optics characteristics of the specimens have analyzed by the UV-visible that have helped on calculation of gap energy by using second derived and Tauc method where we have found the energy value is 4.2 ev. the optics characteristics of the specimens have analyzed by the (FTIR)that there is appearance for absorption peaks that have attributed for existence to the new phase that can not be observed through the X rays who be phase spinel. Diplôme : Magistère En ligne : ../theses/physique/ELK6727.pdf Format de la ressource électronique : pdf Permalink : https://bu.umc.edu.dz/md/index.php?lvl=notice_display&id=9896 Contribution au Développement des Matériaux Nano-Composites à Base de ZnO et Polymère Etude Structural et Optique [texte imprimé] / Abdellah Elkaiem, Auteur ; Abdelhamid Chari, Directeur de thèse . - Constantine : Université Mentouri Constantine, 2015 . - 87 f. ; 30 cm. 2 copies imprimées disponibles Langues : Français (fre) Catégories : Français - Anglais Physique Tags : Semi-conducteurs  ZnO  nano poudres  dope  XRD  FTIR  ZnAl2O4 Index. décimale : 530 Physique Résumé : In this work, we have prepared the Nano powder and thin films of ZnO pure and doped Al with ( 5%,7%) by sol-gel technique and have annealed at (450°C ,750°C). then we analyzed the specimens by X rays diffraction and UV-visible and IR. the structural characteristics of the specimens analyzed by X rays diffraction that confirm the formation of hexagonal structure of ZnO of the type (wûrtzite) with preferential direction for (101). the optics characteristics of the specimens have analyzed by the UV-visible that have helped on calculation of gap energy by using second derived and Tauc method where we have found the energy value is 4.2 ev. the optics characteristics of the specimens have analyzed by the (FTIR)that there is appearance for absorption peaks that have attributed for existence to the new phase that can not be observed through the X rays who be phase spinel. Diplôme : Magistère En ligne : ../theses/physique/ELK6727.pdf Format de la ressource électronique : pdf Permalink : https://bu.umc.edu.dz/md/index.php?lvl=notice_display&id=9896

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Etude et caractérisation de matériaux à base d’oxyde de Silicium pour applications en microtechnologies / Bessem Kaghouche    

Public ISBD Titre : Etude et caractérisation de matériaux à base d’oxyde de Silicium pour applications en microtechnologies Type de document : texte imprimé Auteurs : Bessem Kaghouche, Auteur ; Farida Mansour, Directeur de thèse Editeur : constantine [Algérie] : Université Constantine 1 Année de publication : 2014 Importance : 169 f. Format : 30 cm. Note générale : 2 copies imprimées disponibles Langues : Français (fre) Catégories : Français - Anglais Electronique Tags : silicon oxynitride  SiOxNy  LPCVD  ellipsometry  effective medium theory  FTIR  thermal annealing  Oxynitrure de silicium  ellipsométrie  théorie des milieux effectifs  recuit thermique  ????????? ?????????  ????? ???????????  ????? ??????? ???????  ??????? ??????? Index. décimale : 621 Electronique Résumé : This thesis is devoted to the study of thin films silicon oxynitride SiOxNy characteristics. Currently, silicon oxynitride SiOxNy is considered the most appropriate material for the manufacture of electronic and optoelectronic devices, since it presents several advantages and the ability to obtain intermediate properties between silicon oxide SiO2 and silicon nitride Si3N4, while being compatible with the standard technology of the microelectronic industry. The main purpose of this thesis is to study the optical and physico-chemical properties of SiOxNy films before and after annealing, using analysis techniques such as ellipsometry, FTIR and RBS technique. The films involved in this study were deposited on (100) silicon single-crystal wafer by low pressure chemical vapour deposition (LPCVD) technique at temperature of about 8500C from a mixture of dichlorosilane (SiH2C12), nitrous oxide (N2O) and ammonia (NH3). The optical properties, film thickness and composition of the oxynitride layers were studied by spectroscopic ellipsometry. For ellipsometry analysis, the application of Bruggeman effective medium approximation theory BEMA and the Tauc-Lorentz dispersion model has allowed us to calculate the refractive index, the volume fractions, the optical gap and thickness of silicon oxynitride films. The physico-chemical properties of the as deposited SiOxNy (not annealed) films were essentially studied using Fourier-Transform Infra-Red spectroscopy (FTIR). Based on the deconvolution of the FTIR spectra, we have identified the vibration modes of Si-O and Si-N bonds. To improve the deconvolution method and the interpretation of FTIR results, we proposed a novel method based on the correlation between the obtained results by BEMA model (derived from the analysis ellipsometry) and FTIR measurements. This method allowed a satisfactory and accurate estimatation of the SiOxNy films stoichiometry and their atomic concentrations. Additional measurements were obtained by the RBS technique to access to the volume fractions values [O]/[Si] and [N]/[Si]. By using these characterization techniques on thermally annealed samples at high temperatures, we have found that a suitable thermal annealing of the SiOxNy film can, on the one hand, almost completely releases the nitrogen atoms, on the other hand, causes the formation of a certain amount of silicon clusters in these films. Finally, in the last part of this thesis, we presented an application of SiOxNy films in the field of microelectronics technology, such as the submicron MOSFET with silicon oxynitride as gate material. The study was carried out using TCAD -SILVACO software. A comparison was made between the characteristics of a conventional gate transistor (based on silicon oxide SiO2) and a transistor gate made of SiOxNy. The obtained results showed that the use of silicon oxynitride as the gate of TMOS has enabled a significant improvement in the device performance in particular, the reduction of gate leakage current and the increase in current drain. These advantages allow the consideration of this material as a good candidate to replace conventional insulators used in the MOS technology. Diplôme : Doctorat en sciences En ligne : ../theses/electronique/KAG6622.pdf Format de la ressource électronique : pdf Permalink : https://bu.umc.edu.dz/md/index.php?lvl=notice_display&id=9745 Etude et caractérisation de matériaux à base d’oxyde de Silicium pour applications en microtechnologies [texte imprimé] / Bessem Kaghouche, Auteur ; Farida Mansour, Directeur de thèse . - constantine (Route ain el bey, Algérie) : Université Constantine 1, 2014 . - 169 f. ; 30 cm. 2 copies imprimées disponibles Langues : Français (fre) Catégories : Français - Anglais Electronique Tags : silicon oxynitride  SiOxNy  LPCVD  ellipsometry  effective medium theory  FTIR  thermal annealing  Oxynitrure de silicium  ellipsométrie  théorie des milieux effectifs  recuit thermique  ????????? ?????????  ????? ???????????  ????? ??????? ???????  ??????? ??????? Index. décimale : 621 Electronique Résumé : This thesis is devoted to the study of thin films silicon oxynitride SiOxNy characteristics. Currently, silicon oxynitride SiOxNy is considered the most appropriate material for the manufacture of electronic and optoelectronic devices, since it presents several advantages and the ability to obtain intermediate properties between silicon oxide SiO2 and silicon nitride Si3N4, while being compatible with the standard technology of the microelectronic industry. The main purpose of this thesis is to study the optical and physico-chemical properties of SiOxNy films before and after annealing, using analysis techniques such as ellipsometry, FTIR and RBS technique. The films involved in this study were deposited on (100) silicon single-crystal wafer by low pressure chemical vapour deposition (LPCVD) technique at temperature of about 8500C from a mixture of dichlorosilane (SiH2C12), nitrous oxide (N2O) and ammonia (NH3). The optical properties, film thickness and composition of the oxynitride layers were studied by spectroscopic ellipsometry. For ellipsometry analysis, the application of Bruggeman effective medium approximation theory BEMA and the Tauc-Lorentz dispersion model has allowed us to calculate the refractive index, the volume fractions, the optical gap and thickness of silicon oxynitride films. The physico-chemical properties of the as deposited SiOxNy (not annealed) films were essentially studied using Fourier-Transform Infra-Red spectroscopy (FTIR). Based on the deconvolution of the FTIR spectra, we have identified the vibration modes of Si-O and Si-N bonds. To improve the deconvolution method and the interpretation of FTIR results, we proposed a novel method based on the correlation between the obtained results by BEMA model (derived from the analysis ellipsometry) and FTIR measurements. This method allowed a satisfactory and accurate estimatation of the SiOxNy films stoichiometry and their atomic concentrations. Additional measurements were obtained by the RBS technique to access to the volume fractions values [O]/[Si] and [N]/[Si]. By using these characterization techniques on thermally annealed samples at high temperatures, we have found that a suitable thermal annealing of the SiOxNy film can, on the one hand, almost completely releases the nitrogen atoms, on the other hand, causes the formation of a certain amount of silicon clusters in these films. Finally, in the last part of this thesis, we presented an application of SiOxNy films in the field of microelectronics technology, such as the submicron MOSFET with silicon oxynitride as gate material. The study was carried out using TCAD -SILVACO software. A comparison was made between the characteristics of a conventional gate transistor (based on silicon oxide SiO2) and a transistor gate made of SiOxNy. The obtained results showed that the use of silicon oxynitride as the gate of TMOS has enabled a significant improvement in the device performance in particular, the reduction of gate leakage current and the increase in current drain. These advantages allow the consideration of this material as a good candidate to replace conventional insulators used in the MOS technology. Diplôme : Doctorat en sciences En ligne : ../theses/electronique/KAG6622.pdf Format de la ressource électronique : pdf Permalink : https://bu.umc.edu.dz/md/index.php?lvl=notice_display&id=9745

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Etude de l’effet de la composition d’une couche mince et de ses conditions d’élaboration par plasma froid à partir de vapeurs organosiliciées sur les propriétés de surface d’un film polymérique / Abdelouahab Nouicer Ilyès dit  

Public ISBD Titre : Etude de l’effet de la composition d’une couche mince et de ses conditions d’élaboration par plasma froid à partir de vapeurs organosiliciées sur les propriétés de surface d’un film polymérique Type de document : texte imprimé Auteurs : Abdelouahab Nouicer Ilyès dit, Auteur ; Salah Sahli, Directeur de thèse Editeur : جامعة الإخوة منتوري قسنطينة Année de publication : 2017 Importance : 159 f. Format : 30 cm. Note générale : 2 copies imprimées disponibles Langues : Français (fre) Catégories : Français - Anglais Electronique Tags : HMDSO  Polyimide  traitement de surface  mouillabilité  super-hydrophobie  nanopoudre  PECVD  RCER  FTIR  MEB  AFM  surface treatment  wettability  super-hydrophobic  nanopowder  SEM  ?????????  ?????? ?????  ?????  ???????? ??????????? Index. décimale : 621 Electronique Résumé : Plasma polymerization of hexamethyldisiloxane (PPHMDSO) was used to deposit SiOxCyHz thin films on silicon and polyimide substrates, using low-frequency plasma and microwave plasma discharge at low pressure. The effects of plasma chamber pressure, oxygen rate in Ar/O2 mixture, treatment time and post-treatment on the films characteristics were studied. The thickness, surface properties and chemical structure of the deposited thin films were analyzed using profilo-meter measurements, scanning electron microscopy (SEM), static contact angle and infrared spectroscopy (FTIR and FTIR-ATR). At low frequencies and for certain deposition parameters, nano-powders of different concentrations and sizes were observed on the deposited thin films surface. The FTIR analysis revealed that the chemical formula of the deposited layers is close to SiOxCyHz one, with more organic character when chamber pressure and/or deposition time were increased. Water contact angle measurements show that the increase in the deposition pressure and deposition time leads to the growth on the polyimide and silicon substrates of thin layers with super-hydrophobic surface due to the increase in the concentration of the nano-powders on the treated surfaces. Plasmas created in HMDSO vapours using a microwave frequency plasma in ECR reactor leads to the deposition of similar PPHMDSO thin layer on polyimide and silicon surfaces. A post-treatment of these coating layers using a microwave plasma created in Ar/O2 mixtures shows that the increase of oxygen rate in this mixture and the increase in the post-treatment time induces a significant decrease of the contact angle because of a decrease in the layers roughness (revealed by AFM characterization) and mainly, because of a more surface oxidation of the thin layers (revealed by FTIR analyzes) Diplôme : Doctorat en sciences En ligne : ../theses/electronique/NOU7147.pdf Format de la ressource électronique : pdf Permalink : https://bu.umc.edu.dz/md/index.php?lvl=notice_display&id=10456 Etude de l’effet de la composition d’une couche mince et de ses conditions d’élaboration par plasma froid à partir de vapeurs organosiliciées sur les propriétés de surface d’un film polymérique [texte imprimé] / Abdelouahab Nouicer Ilyès dit, Auteur ; Salah Sahli, Directeur de thèse . - [S.l.] : جامعة الإخوة منتوري قسنطينة, 2017 . - 159 f. ; 30 cm. 2 copies imprimées disponibles Langues : Français (fre) Catégories : Français - Anglais Electronique Tags : HMDSO  Polyimide  traitement de surface  mouillabilité  super-hydrophobie  nanopoudre  PECVD  RCER  FTIR  MEB  AFM  surface treatment  wettability  super-hydrophobic  nanopowder  SEM  ?????????  ?????? ?????  ?????  ???????? ??????????? Index. décimale : 621 Electronique Résumé : Plasma polymerization of hexamethyldisiloxane (PPHMDSO) was used to deposit SiOxCyHz thin films on silicon and polyimide substrates, using low-frequency plasma and microwave plasma discharge at low pressure. The effects of plasma chamber pressure, oxygen rate in Ar/O2 mixture, treatment time and post-treatment on the films characteristics were studied. The thickness, surface properties and chemical structure of the deposited thin films were analyzed using profilo-meter measurements, scanning electron microscopy (SEM), static contact angle and infrared spectroscopy (FTIR and FTIR-ATR). At low frequencies and for certain deposition parameters, nano-powders of different concentrations and sizes were observed on the deposited thin films surface. The FTIR analysis revealed that the chemical formula of the deposited layers is close to SiOxCyHz one, with more organic character when chamber pressure and/or deposition time were increased. Water contact angle measurements show that the increase in the deposition pressure and deposition time leads to the growth on the polyimide and silicon substrates of thin layers with super-hydrophobic surface due to the increase in the concentration of the nano-powders on the treated surfaces. Plasmas created in HMDSO vapours using a microwave frequency plasma in ECR reactor leads to the deposition of similar PPHMDSO thin layer on polyimide and silicon surfaces. A post-treatment of these coating layers using a microwave plasma created in Ar/O2 mixtures shows that the increase of oxygen rate in this mixture and the increase in the post-treatment time induces a significant decrease of the contact angle because of a decrease in the layers roughness (revealed by AFM characterization) and mainly, because of a more surface oxidation of the thin layers (revealed by FTIR analyzes) Diplôme : Doctorat en sciences En ligne : ../theses/electronique/NOU7147.pdf Format de la ressource électronique : pdf Permalink : https://bu.umc.edu.dz/md/index.php?lvl=notice_display&id=10456

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Adsorption du Bore en solution aqueuse par le charbon actif et l'alumine / Zelikha Bououden  

Public ISBD Titre : Adsorption du Bore en solution aqueuse par le charbon actif et l'alumine Type de document : texte imprimé Auteurs : Zelikha Bououden ; Université Mentouri, Editeur scientifique ; A. Mennour, Directeur de thèse Année de publication : 2007 Importance : 77 f. Note générale : 01 Disponible à la salle de recherche 02 Disponibles au magazin de la B.U.C. 01 CD Langues : Français (fre) Catégories : Français - Anglais Chimie Tags : Bore  FTIR  Adsorption  Charbon actif  Y-Alumine Index. décimale : 540 Chimie et sciences connexes Diplôme : Magistère En ligne : ../theses/chimie/BOU4885.pdf Permalink : https://bu.umc.edu.dz/md/index.php?lvl=notice_display&id=3726 Adsorption du Bore en solution aqueuse par le charbon actif et l'alumine [texte imprimé] / Zelikha Bououden ; Université Mentouri, Editeur scientifique ; A. Mennour, Directeur de thèse . - 2007 . - 77 f. 01 Disponible à la salle de recherche 02 Disponibles au magazin de la B.U.C. 01 CD Langues : Français (fre) Catégories : Français - Anglais Chimie Tags : Bore  FTIR  Adsorption  Charbon actif  Y-Alumine Index. décimale : 540 Chimie et sciences connexes Diplôme : Magistère En ligne : ../theses/chimie/BOU4885.pdf Permalink : https://bu.umc.edu.dz/md/index.php?lvl=notice_display&id=3726

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Spectroscopie d'émission optique (SEO) par analyseur optique muticanaux d'un plasma basse pression / Fouzi Bouanaka  

Public ISBD Titre : Spectroscopie d'émission optique (SEO) par analyseur optique muticanaux d'un plasma basse pression Type de document : texte imprimé Auteurs : Fouzi Bouanaka ; Université Mentouri, Editeur scientifique ; Saida Benahmed-Rebiai, Directeur de thèse Année de publication : 2008 Importance : 81 f. Note générale : 01 Disponible à la salle de recherche 02 Disponibles au magazin de la B.U.C. 01 CD Langues : Français (fre) Catégories : Français - Anglais Electronique Tags : Plasma  SEO  FTIR  BST  HMDSO Index. décimale : 621 Electronique En ligne : ../theses/electronique/BOU5066.pdf Permalink : https://bu.umc.edu.dz/md/index.php?lvl=notice_display&id=2744 Spectroscopie d'émission optique (SEO) par analyseur optique muticanaux d'un plasma basse pression [texte imprimé] / Fouzi Bouanaka ; Université Mentouri, Editeur scientifique ; Saida Benahmed-Rebiai, Directeur de thèse . - 2008 . - 81 f. 01 Disponible à la salle de recherche 02 Disponibles au magazin de la B.U.C. 01 CD Langues : Français (fre) Catégories : Français - Anglais Electronique Tags : Plasma  SEO  FTIR  BST  HMDSO Index. décimale : 621 Electronique En ligne : ../theses/electronique/BOU5066.pdf Permalink : https://bu.umc.edu.dz/md/index.php?lvl=notice_display&id=2744

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