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Partager le résultat de cette recherche Interroger des sources externesRécristallisation thermiques et conduction électrique de couches minces semiconductrices pour leur application à des structures MOS / Sidi Mohamed Ould Ahmed
Titre : Récristallisation thermiques et conduction électrique de couches minces semiconductrices pour leur application à des structures MOS Type de document : texte imprimé Auteurs : Sidi Mohamed Ould Ahmed ; Univ. de Constantine, Éditeur scientifique ; F. Mansour, Directeur de thèse Année de publication : 2001 Importance : 87 f. Note générale : 1 Disponible à la salle de recherche
2 Disponibles au magasin de la bibliothèque centraleLangues : Français (fre) Catégories : Français - Anglais
PhysiqueTags : Silicium polycristallin Cristallisation Recuit thermique Propriétés électroniques Index. décimale : 530 Physique Permalink : index.php?lvl=notice_display&id=2983 Récristallisation thermiques et conduction électrique de couches minces semiconductrices pour leur application à des structures MOS [texte imprimé] / Sidi Mohamed Ould Ahmed ; Univ. de Constantine, Éditeur scientifique ; F. Mansour, Directeur de thèse . - 2001 . - 87 f.
1 Disponible à la salle de recherche
2 Disponibles au magasin de la bibliothèque centrale
Langues : Français (fre)
Catégories : Français - Anglais
PhysiqueTags : Silicium polycristallin Cristallisation Recuit thermique Propriétés électroniques Index. décimale : 530 Physique Permalink : index.php?lvl=notice_display&id=2983 Exemplaires (1)
Code-barres Cote Support Localisation Section Disponibilité OUL/3503 OUL/3503 Thèse Bibliothèque principale Thèses Disponible 
Titre : Etude et caractérisation de matériaux à base d’oxyde de Silicium pour applications en microtechnologies Type de document : texte imprimé Auteurs : Bessem Kaghouche, Auteur ; Farida Mansour, Directeur de thèse Editeur : constantine [Algérie] : Université Constantine 1 Année de publication : 2014 Importance : 169 f. Format : 30 cm. Note générale : 2 copies imprimées disponibles
Langues : Français (fre) Catégories : Français - Anglais
ElectroniqueTags : silicon oxynitride SiOxNy LPCVD ellipsometry effective medium theory FTIR thermal annealing Oxynitrure de silicium ellipsométrie théorie des milieux effectifs recuit thermique أكسينتريد السليسيوم تقنية الأهلجيمتري نظرية الوسائط الفعالة التلدين الحراري Index. décimale : 621 Electronique Résumé : This thesis is devoted to the study of thin films silicon oxynitride SiOxNy characteristics. Currently, silicon oxynitride SiOxNy is considered the most appropriate material for the manufacture of electronic and optoelectronic devices, since it presents several advantages and the ability to obtain intermediate properties between silicon oxide SiO2 and silicon nitride Si3N4, while being compatible with the standard technology of the microelectronic industry.
The main purpose of this thesis is to study the optical and physico-chemical properties of SiOxNy films before and after annealing, using analysis techniques such as ellipsometry, FTIR and RBS technique. The films involved in this study were deposited on (100) silicon single-crystal wafer by low pressure chemical vapour deposition (LPCVD) technique at temperature of about 8500C from a mixture of dichlorosilane (SiH2C12), nitrous oxide (N2O) and ammonia (NH3). The optical properties, film thickness and composition of the oxynitride layers were studied by spectroscopic ellipsometry. For ellipsometry analysis, the application of Bruggeman effective medium approximation theory BEMA and the Tauc-Lorentz dispersion model has allowed us to calculate the refractive index, the volume fractions, the optical gap and thickness of silicon oxynitride films. The physico-chemical properties of the as deposited SiOxNy (not annealed) films were essentially studied using Fourier-Transform Infra-Red spectroscopy (FTIR). Based on the deconvolution of the FTIR spectra, we have identified the vibration modes of Si-O and Si-N bonds. To improve the deconvolution method and the interpretation of FTIR results, we proposed a novel method based on the correlation between the obtained results by BEMA model (derived from the analysis ellipsometry) and FTIR measurements. This method allowed a satisfactory and accurate estimatation of the SiOxNy films stoichiometry and their atomic concentrations. Additional measurements were obtained by the RBS technique to access to the volume fractions values [O]/[Si] and [N]/[Si]. By using these characterization techniques on thermally annealed samples at high temperatures, we have found that a suitable thermal annealing of the SiOxNy film can, on the one hand, almost completely releases the nitrogen
atoms, on the other hand, causes the formation of a certain amount of silicon clusters in these films.
Finally, in the last part of this thesis, we presented an application of SiOxNy films in the field of microelectronics technology, such as the submicron MOSFET with silicon oxynitride as gate material. The study was carried out using TCAD -SILVACO software. A comparison was made between the characteristics of a conventional gate transistor (based on silicon oxide SiO2) and a transistor gate made of SiOxNy. The obtained results showed that the use of silicon oxynitride as the gate of TMOS has enabled a significant improvement in the device performance in particular, the reduction of gate leakage current and the increase in current drain. These advantages allow the consideration of this material as a good candidate to replace conventional insulators used in the MOS technology.Diplôme : Doctorat en sciences En ligne : ../theses/electronique/KAG6622.pdf Format de la ressource électronique : Permalink : index.php?lvl=notice_display&id=9745 Etude et caractérisation de matériaux à base d’oxyde de Silicium pour applications en microtechnologies [texte imprimé] / Bessem Kaghouche, Auteur ; Farida Mansour, Directeur de thèse . - constantine [Algérie] : Université Constantine 1, 2014 . - 169 f. ; 30 cm.
2 copies imprimées disponibles
Langues : Français (fre)
Catégories : Français - Anglais
ElectroniqueTags : silicon oxynitride SiOxNy LPCVD ellipsometry effective medium theory FTIR thermal annealing Oxynitrure de silicium ellipsométrie théorie des milieux effectifs recuit thermique أكسينتريد السليسيوم تقنية الأهلجيمتري نظرية الوسائط الفعالة التلدين الحراري Index. décimale : 621 Electronique Résumé : This thesis is devoted to the study of thin films silicon oxynitride SiOxNy characteristics. Currently, silicon oxynitride SiOxNy is considered the most appropriate material for the manufacture of electronic and optoelectronic devices, since it presents several advantages and the ability to obtain intermediate properties between silicon oxide SiO2 and silicon nitride Si3N4, while being compatible with the standard technology of the microelectronic industry.
The main purpose of this thesis is to study the optical and physico-chemical properties of SiOxNy films before and after annealing, using analysis techniques such as ellipsometry, FTIR and RBS technique. The films involved in this study were deposited on (100) silicon single-crystal wafer by low pressure chemical vapour deposition (LPCVD) technique at temperature of about 8500C from a mixture of dichlorosilane (SiH2C12), nitrous oxide (N2O) and ammonia (NH3). The optical properties, film thickness and composition of the oxynitride layers were studied by spectroscopic ellipsometry. For ellipsometry analysis, the application of Bruggeman effective medium approximation theory BEMA and the Tauc-Lorentz dispersion model has allowed us to calculate the refractive index, the volume fractions, the optical gap and thickness of silicon oxynitride films. The physico-chemical properties of the as deposited SiOxNy (not annealed) films were essentially studied using Fourier-Transform Infra-Red spectroscopy (FTIR). Based on the deconvolution of the FTIR spectra, we have identified the vibration modes of Si-O and Si-N bonds. To improve the deconvolution method and the interpretation of FTIR results, we proposed a novel method based on the correlation between the obtained results by BEMA model (derived from the analysis ellipsometry) and FTIR measurements. This method allowed a satisfactory and accurate estimatation of the SiOxNy films stoichiometry and their atomic concentrations. Additional measurements were obtained by the RBS technique to access to the volume fractions values [O]/[Si] and [N]/[Si]. By using these characterization techniques on thermally annealed samples at high temperatures, we have found that a suitable thermal annealing of the SiOxNy film can, on the one hand, almost completely releases the nitrogen
atoms, on the other hand, causes the formation of a certain amount of silicon clusters in these films.
Finally, in the last part of this thesis, we presented an application of SiOxNy films in the field of microelectronics technology, such as the submicron MOSFET with silicon oxynitride as gate material. The study was carried out using TCAD -SILVACO software. A comparison was made between the characteristics of a conventional gate transistor (based on silicon oxide SiO2) and a transistor gate made of SiOxNy. The obtained results showed that the use of silicon oxynitride as the gate of TMOS has enabled a significant improvement in the device performance in particular, the reduction of gate leakage current and the increase in current drain. These advantages allow the consideration of this material as a good candidate to replace conventional insulators used in the MOS technology.Diplôme : Doctorat en sciences En ligne : ../theses/electronique/KAG6622.pdf Format de la ressource électronique : Permalink : index.php?lvl=notice_display&id=9745 Exemplaires (1)
Code-barres Cote Support Localisation Section Disponibilité KAG/6622 KAG/6622 Thèse Bibliothèque principale Thèses Disponible Documents numériques
texte intégreAdobe Acrobat PDF
Titre : Etude des propriétés de couches minces d'oxydes métalliques pour applications dans le domaine biomédical : détection de gaz toxiques. Type de document : texte imprimé Auteurs : Bouteina Bendahmane, Auteur ; Farida Mansour, Directeur de thèse ; Nour El Houda Touidjen, Directeur de thèse Mention d'édition : 23/09/2021 Editeur : جامعة الإخوة منتوري قسنطينة Année de publication : 2021 Importance : 128 f. Format : 30 cm. Note générale : Doctorat 3éme CYCLE LMD.
1 copies imprimées disponibles
Langues : Français (fre) Catégories : Français - Anglais
ElectroniqueTags : Electonique: Procédés et dispositifs pour le biomédical spray pyrolyse couches minces dioxyde d’étain recuit thermique dopage détection des gaz toxiques spray pyrolysis thin films tin dioxide thermal annealing doping detection of toxic gases رذاذ الانحلال الحراري الطبقات الرقيقة ثاني أكسيد القصدير المعالجة الحرارية ، التنشيط الكشف عن الغازات السامة Index. décimale : 621 Electronique Résumé :
In this dissertation, we used chemical spray pyrolysis method for the growth of pristine, annealed, and magnesium (Mg) doped tin dioxide (SnO2) thin films, for their application in the detection of toxic gases. The synthesis of tin dioxide thin films, their characterizations as well as their gas sensing performances have been investigated. The spray pyrolysis method has proved its compatibility and its suitability for growing pristine and doped thin films within a single step deposition process at moderate temperatures (≤ 400°C). Furthermore, various analyzing techniques have been used to examine the structure, morphology, and composition
of the synthesized films. The results showed that thermal annealing at 450°C improved the crystallinity and homogeneity of the Mg-doped SnO2 films. The gas sensing characteristics in the presence of toxic gases, showed that the increase of the Mg doping level up to 1.6 at.% within the SnO2 films has improved their responses, their sensitivities, as well as their partial selectivities mainly towards ethanol (the response is almost fourteen times higher). Thus, we were able to propose an explanatory model for the interaction of the sensitive layers surface with gas molecules. The latter is based on the defects introduced in the films, the subsequent decrease in the crystallites’ size and the formation of different phase that led to the improvement
of the interaction between the adsorbed oxygen species and the target gas molecules.
Diplôme : Doctorat En ligne : ../theses/electronique/BEN7803.pdf Format de la ressource électronique : Permalink : index.php?lvl=notice_display&id=11635 Etude des propriétés de couches minces d'oxydes métalliques pour applications dans le domaine biomédical : détection de gaz toxiques. [texte imprimé] / Bouteina Bendahmane, Auteur ; Farida Mansour, Directeur de thèse ; Nour El Houda Touidjen, Directeur de thèse . - 23/09/2021 . - جامعة الإخوة منتوري قسنطينة, 2021 . - 128 f. ; 30 cm.
Doctorat 3éme CYCLE LMD.
1 copies imprimées disponibles
Langues : Français (fre)
Catégories : Français - Anglais
ElectroniqueTags : Electonique: Procédés et dispositifs pour le biomédical spray pyrolyse couches minces dioxyde d’étain recuit thermique dopage détection des gaz toxiques spray pyrolysis thin films tin dioxide thermal annealing doping detection of toxic gases رذاذ الانحلال الحراري الطبقات الرقيقة ثاني أكسيد القصدير المعالجة الحرارية ، التنشيط الكشف عن الغازات السامة Index. décimale : 621 Electronique Résumé :
In this dissertation, we used chemical spray pyrolysis method for the growth of pristine, annealed, and magnesium (Mg) doped tin dioxide (SnO2) thin films, for their application in the detection of toxic gases. The synthesis of tin dioxide thin films, their characterizations as well as their gas sensing performances have been investigated. The spray pyrolysis method has proved its compatibility and its suitability for growing pristine and doped thin films within a single step deposition process at moderate temperatures (≤ 400°C). Furthermore, various analyzing techniques have been used to examine the structure, morphology, and composition
of the synthesized films. The results showed that thermal annealing at 450°C improved the crystallinity and homogeneity of the Mg-doped SnO2 films. The gas sensing characteristics in the presence of toxic gases, showed that the increase of the Mg doping level up to 1.6 at.% within the SnO2 films has improved their responses, their sensitivities, as well as their partial selectivities mainly towards ethanol (the response is almost fourteen times higher). Thus, we were able to propose an explanatory model for the interaction of the sensitive layers surface with gas molecules. The latter is based on the defects introduced in the films, the subsequent decrease in the crystallites’ size and the formation of different phase that led to the improvement
of the interaction between the adsorbed oxygen species and the target gas molecules.
Diplôme : Doctorat En ligne : ../theses/electronique/BEN7803.pdf Format de la ressource électronique : Permalink : index.php?lvl=notice_display&id=11635 Exemplaires (1)
Code-barres Cote Support Localisation Section Disponibilité BEN/7803 BEN/7803 Thèse Bibliothèque principale Thèses Disponible
Titre : Etude des propriétés technologiques des films de Si-LPCVD fortement dopés au bore : modélisation de la diffusion accélérée et transitoire ou TED Type de document : texte imprimé Auteurs : Salah Abadli ; Univ. de Constantine, Éditeur scientifique ; F. Mansour, Directeur de thèse Année de publication : 2009 Importance : 175 f. Note générale : 01 Disponible à la salle de recherche 02 Disponibles au mafazin de la B.U.C. 01 CD Langues : Français (fre) Catégories : Français - Anglais
ElectroniqueTags : Modélisation Piégeage SIMS Ségrégation Bore Clusters Diffusion accélérée et transitoire Cristallisation Recuit thermique Index. décimale : 621 Electronique Permalink : index.php?lvl=notice_display&id=2669 Etude des propriétés technologiques des films de Si-LPCVD fortement dopés au bore : modélisation de la diffusion accélérée et transitoire ou TED [texte imprimé] / Salah Abadli ; Univ. de Constantine, Éditeur scientifique ; F. Mansour, Directeur de thèse . - 2009 . - 175 f.
01 Disponible à la salle de recherche 02 Disponibles au mafazin de la B.U.C. 01 CD
Langues : Français (fre)
Catégories : Français - Anglais
ElectroniqueTags : Modélisation Piégeage SIMS Ségrégation Bore Clusters Diffusion accélérée et transitoire Cristallisation Recuit thermique Index. décimale : 621 Electronique Permalink : index.php?lvl=notice_display&id=2669 Exemplaires (1)
Code-barres Cote Support Localisation Section Disponibilité ABA/5431 ABA/5431 Thèse Bibliothèque principale Thèses Disponible Exemplaires (1)
Code-barres Cote Support Localisation Section Disponibilité LAH/6741 LAH/6741 Thèse Bibliothèque principale Thèses Disponible
