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Partager le résultat de cette recherche Interroger des sources externesContribution à l’étude du transport électrique à travers des oxydes très minces (<10nm) dans des structures MOS / Rachida Bensegueni
Titre : Contribution à l’étude du transport électrique à travers des oxydes très minces (<10nm) dans des structures MOS Type de document : texte imprimé Auteurs : Rachida Bensegueni, Auteur ; Saida Latreche, Directeur de thèse Année de publication : 2016 Importance : 166 f. Format : 30 cm. Note générale : 2 copies imprimées disponibles
Langues : Français (fre) Catégories : Français - Anglais
ElectroniqueTags : Semi-conducteurs Microelectronic down-scaling strained Si channel high-k dielectric mobility gate leakage currents direct tunneling current Microélectronique miniaturisation MOSFET Silicium contraint diélectrique haute
permittivité mobilité courants de fuites courant tunnel direct الالكترونيات الدقيقة التصغير السيليكون المتوترة ثنائية المحور العازل عالي السماحية التىقل الالكتروني التسربات تيار تونالIndex. décimale : 621 Electronique Résumé : The continuous down-scaling of MOS transistors dimensions over the last years allowed a significant revolution in the semiconductor industry. However, in order to maintain this trend, shrinking of conventional n MOS dimensions is no more sufficient enough and replacement of some transistor materials is one of the alternative ways currently under study to solve this issue. In this context, the work presented here, on the study of the transport properties of the nMOS architectures combining both new technology options; a high-k gate dielectric in place of the SiO2 and a biaxialy tensile strained channel.
Firstly, the influence of biaxial tensile strain on the electrical properties of the n-MOS transistor has been investigated using a numerical solution of drift diffusion partial equations.
The simulation results showed a significant improvement in electrons mobility and an increase in current ID (VD).
Then, we study the impact of the incorporation of a high-k gate stack on improving leakage through the oxide. The calculation results obtained from the ATLAS (SILVACOTCAD) simulator have shown that the use of high dielectric constant oxides significantly reduces the tunneling leakage current through increased physical thickness of the stack.
However, we noted a decrease of the electron mobility in the channel If MOS transistors with a high-k dielectric HfO2 hafnium relative to SiO2 Finally, the feasibility and interest to introduce a strained silicon channel to counteract the degradation of mobility associated with stacking metal / HfO2 are then discussed.
Note de contenu :
Annexe I: discrétisation des équations par la méthode des différences finies
Annexe II: simulation électrique par ATLAS (SILVACO-TCAD)Diplôme : Doctorat en sciences En ligne : ../theses/electronique/BEN6980.pdf Format de la ressource électronique : Permalink : index.php?lvl=notice_display&id=10415 Contribution à l’étude du transport électrique à travers des oxydes très minces (<10nm) dans des structures MOS [texte imprimé] / Rachida Bensegueni, Auteur ; Saida Latreche, Directeur de thèse . - 2016 . - 166 f. ; 30 cm.
2 copies imprimées disponibles
Langues : Français (fre)
Catégories : Français - Anglais
ElectroniqueTags : Semi-conducteurs Microelectronic down-scaling strained Si channel high-k dielectric mobility gate leakage currents direct tunneling current Microélectronique miniaturisation MOSFET Silicium contraint diélectrique haute
permittivité mobilité courants de fuites courant tunnel direct الالكترونيات الدقيقة التصغير السيليكون المتوترة ثنائية المحور العازل عالي السماحية التىقل الالكتروني التسربات تيار تونالIndex. décimale : 621 Electronique Résumé : The continuous down-scaling of MOS transistors dimensions over the last years allowed a significant revolution in the semiconductor industry. However, in order to maintain this trend, shrinking of conventional n MOS dimensions is no more sufficient enough and replacement of some transistor materials is one of the alternative ways currently under study to solve this issue. In this context, the work presented here, on the study of the transport properties of the nMOS architectures combining both new technology options; a high-k gate dielectric in place of the SiO2 and a biaxialy tensile strained channel.
Firstly, the influence of biaxial tensile strain on the electrical properties of the n-MOS transistor has been investigated using a numerical solution of drift diffusion partial equations.
The simulation results showed a significant improvement in electrons mobility and an increase in current ID (VD).
Then, we study the impact of the incorporation of a high-k gate stack on improving leakage through the oxide. The calculation results obtained from the ATLAS (SILVACOTCAD) simulator have shown that the use of high dielectric constant oxides significantly reduces the tunneling leakage current through increased physical thickness of the stack.
However, we noted a decrease of the electron mobility in the channel If MOS transistors with a high-k dielectric HfO2 hafnium relative to SiO2 Finally, the feasibility and interest to introduce a strained silicon channel to counteract the degradation of mobility associated with stacking metal / HfO2 are then discussed.
Note de contenu :
Annexe I: discrétisation des équations par la méthode des différences finies
Annexe II: simulation électrique par ATLAS (SILVACO-TCAD)Diplôme : Doctorat en sciences En ligne : ../theses/electronique/BEN6980.pdf Format de la ressource électronique : Permalink : index.php?lvl=notice_display&id=10415 Exemplaires (1)
Code-barres Cote Support Localisation Section Disponibilité BEN/6980 BEN/6980 Thèse Bibliothèque principale Thèses Disponible
Titre : Contribution au Développement des Matériaux Nano-Composites à Base de ZnO et Polymère Etude Structural et Optique Type de document : texte imprimé Auteurs : Abdellah Elkaiem, Auteur ; Abdelhamid Chari, Directeur de thèse Editeur : Constantine : Université Mentouri Constantine Année de publication : 2015 Importance : 87 f. Format : 30 cm. Note générale : 2 copies imprimées disponibles
Langues : Français (fre) Catégories : Français - Anglais
PhysiqueTags : Semi-conducteurs ZnO nano poudres dope XRD FTIR ZnAl2O4 Index. décimale : 530 Physique Résumé : In this work, we have prepared the Nano powder and thin films of ZnO pure and doped Al with ( 5%,7%) by sol-gel technique and have annealed at (450°C ,750°C). then we analyzed the specimens by X rays diffraction and UV-visible and IR.
the structural characteristics of the specimens analyzed by X rays diffraction that confirm the formation of hexagonal structure of ZnO of the type (wûrtzite) with preferential direction for (101).
the optics characteristics of the specimens have analyzed by the UV-visible that have helped on calculation of gap energy by using second derived and Tauc method where we have found the energy value is 4.2 ev.
the optics characteristics of the specimens have analyzed by the (FTIR)that there is appearance for absorption peaks that have attributed for existence to the new phase that can not be observed through the X rays who be phase spinel.
Diplôme : Magistère En ligne : ../theses/physique/ELK6727.pdf Format de la ressource électronique : Permalink : index.php?lvl=notice_display&id=9896 Contribution au Développement des Matériaux Nano-Composites à Base de ZnO et Polymère Etude Structural et Optique [texte imprimé] / Abdellah Elkaiem, Auteur ; Abdelhamid Chari, Directeur de thèse . - Constantine : Université Mentouri Constantine, 2015 . - 87 f. ; 30 cm.
2 copies imprimées disponibles
Langues : Français (fre)
Catégories : Français - Anglais
PhysiqueTags : Semi-conducteurs ZnO nano poudres dope XRD FTIR ZnAl2O4 Index. décimale : 530 Physique Résumé : In this work, we have prepared the Nano powder and thin films of ZnO pure and doped Al with ( 5%,7%) by sol-gel technique and have annealed at (450°C ,750°C). then we analyzed the specimens by X rays diffraction and UV-visible and IR.
the structural characteristics of the specimens analyzed by X rays diffraction that confirm the formation of hexagonal structure of ZnO of the type (wûrtzite) with preferential direction for (101).
the optics characteristics of the specimens have analyzed by the UV-visible that have helped on calculation of gap energy by using second derived and Tauc method where we have found the energy value is 4.2 ev.
the optics characteristics of the specimens have analyzed by the (FTIR)that there is appearance for absorption peaks that have attributed for existence to the new phase that can not be observed through the X rays who be phase spinel.
Diplôme : Magistère En ligne : ../theses/physique/ELK6727.pdf Format de la ressource électronique : Permalink : index.php?lvl=notice_display&id=9896 Exemplaires (1)
Code-barres Cote Support Localisation Section Disponibilité ELK/6727 ELK/6727 Thèse Bibliothèque principale Thèses Disponible
Titre : Élaboration et caracterisation des films ZnS par bain chimique Type de document : texte imprimé Auteurs : Hichem Lekiket, Auteur ; Mohamed Salah Aida, Directeur de thèse Editeur : جامعة الإخوة منتوري قسنطينة Année de publication : 2016 Importance : 116 f. Format : 30 cm. Note générale : 2 copies imprimes disponibles Langues : Français (fre) Catégories : Français - Anglais
PhysiqueTags : Science des matériaux semi-conducteurs Couches minces Sulfure de zinc Bain chimique Cellules solaires Thin films Zinc sulfide Chemical bath Solar cells الشرائح الرقيقة كبريتات الزنك بالحمام الكميائ الخلايا الشمسية Index. décimale : 530 Physique Résumé : The present work deals with the study of ZnS thin film synthesis by chemical bath deposition
technique (CBD). The latter is known to be cheap and simple which motivates our choice of
this method. We have used Zinc sulfate (ZnSO4), Thiourea (CS(NH2)2), ammonia (NH3) and
hydrazine (N2H4). thin films were prepared with two different parameters such as the pH
and the solution temperature. The structural, optical and electrical properties of the obtained
films were characterized by means of several techniques. From structural studies of ZnS films
we inferred that ZnS films have a cubic structure with a preferential orientation (111).
The optical studies reveal that ZnS films have a large transparency in the visible range. This
comforts their using as buffer layer in thin films solar cells.Diplôme : Doctorat en sciences En ligne : ../theses/physique/LEK6849.pdf Format de la ressource électronique : Permalink : index.php?lvl=notice_display&id=10146 Élaboration et caracterisation des films ZnS par bain chimique [texte imprimé] / Hichem Lekiket, Auteur ; Mohamed Salah Aida, Directeur de thèse . - جامعة الإخوة منتوري قسنطينة, 2016 . - 116 f. ; 30 cm.
2 copies imprimes disponibles
Langues : Français (fre)
Catégories : Français - Anglais
PhysiqueTags : Science des matériaux semi-conducteurs Couches minces Sulfure de zinc Bain chimique Cellules solaires Thin films Zinc sulfide Chemical bath Solar cells الشرائح الرقيقة كبريتات الزنك بالحمام الكميائ الخلايا الشمسية Index. décimale : 530 Physique Résumé : The present work deals with the study of ZnS thin film synthesis by chemical bath deposition
technique (CBD). The latter is known to be cheap and simple which motivates our choice of
this method. We have used Zinc sulfate (ZnSO4), Thiourea (CS(NH2)2), ammonia (NH3) and
hydrazine (N2H4). thin films were prepared with two different parameters such as the pH
and the solution temperature. The structural, optical and electrical properties of the obtained
films were characterized by means of several techniques. From structural studies of ZnS films
we inferred that ZnS films have a cubic structure with a preferential orientation (111).
The optical studies reveal that ZnS films have a large transparency in the visible range. This
comforts their using as buffer layer in thin films solar cells.Diplôme : Doctorat en sciences En ligne : ../theses/physique/LEK6849.pdf Format de la ressource électronique : Permalink : index.php?lvl=notice_display&id=10146 Exemplaires (1)
Code-barres Cote Support Localisation Section Disponibilité LEK/6849 LEK/6849 Thèse Bibliothèque principale Thèses Disponible
Titre : La synthèse des nano particules de CuO avec la méthode de précipitation sol_ gel : en utilisant le précurseur CuCl2 et l'étude de leurs propriétés structurales et optiques Type de document : texte imprimé Auteurs : Rabie Bacha, Auteur ; Abderrahmane Chaieb, Directeur de thèse Editeur : constantine [Algérie] : Université Constantine 1 Année de publication : 2015 Importance : 91 f. Format : 30 cm. Note générale : 2 copies imprimées disponibles
Langues : Français (fre) Catégories : Français - Anglais
PhysiqueTags : Semi-conducteurs CuO composite nanocomposite matrice polymère procédé sol-gel masse effective « spin –coating » gap optique CuO/PMMA thin film powders (sol-gel) process optical properties structural analysis المساحيق الشرائح الرقيقة صول-جال أكسيد النحاس Index. décimale : 530 Physique Résumé : The object of this thesis is the synthesis and characterization of the copper oxide powders “CuO” and its composite thin film of (CuO/PMMA), by (sol-gel) process (wet-chemistry route), also the comparison between two methods of preparation using two different precursors.
The Work was divided into two parts:
The first part allowed to the preparation of the “CuO” powder, and its composite thin film of (CuO/PMMA), by the precursor (CuCl2, 2H2O), and the study of its structural, morphological, and optical properties, we also study in this part the annealing temperature effect on the size of CuO crystallites.
The second part was dedicated to prepare the CuO powder, and its composite thin film (CuO/PMMA), by precursor (Cu (CH3COO) 2, H2O), and DMF (CH3) 2 NC (OH), as solvent, and also the study of the structural, and optical properties.
Various analysis techniques have been used to characterize the CuO powders and its composite (CuO/PMMA) thin films, they are divided into two category:
- The structural analysis including the x-rays diffraction (XRD), the infrared spectroscopy (IR) and the electron scanning microscopy.
- Optical properties and band gap of CuO were studied by UV-Vis spectroscopy.
For the CuO powders prepared by the first precursor (CuCl2, 2H2O), and with different annealing temperatures, the study by x-rays diffraction (XRD) reveals single phase monoclinic structure of CuO, the average crystallite size increased with increasing of annealing temperature.
For the powder CuO to prepare with the second precursor (Cu (CH3COO) 2, H2O) the study by the x-rays diffraction(XRD) , reveals single phase monoclinic structure of CuO, the average crystallite size of the powder annealed to 450 C° is 16,76nm.
The study of the optical properties of the CuO/PMMA composite thin films by the two methods has shown a band gap is estimated to be 3, 90 eV.
Diplôme : Magistère En ligne : ../theses/physique/BAC6717.pdf Format de la ressource électronique : Permalink : index.php?lvl=notice_display&id=9906 La synthèse des nano particules de CuO avec la méthode de précipitation sol_ gel : en utilisant le précurseur CuCl2 et l'étude de leurs propriétés structurales et optiques [texte imprimé] / Rabie Bacha, Auteur ; Abderrahmane Chaieb, Directeur de thèse . - constantine [Algérie] : Université Constantine 1, 2015 . - 91 f. ; 30 cm.
2 copies imprimées disponibles
Langues : Français (fre)
Catégories : Français - Anglais
PhysiqueTags : Semi-conducteurs CuO composite nanocomposite matrice polymère procédé sol-gel masse effective « spin –coating » gap optique CuO/PMMA thin film powders (sol-gel) process optical properties structural analysis المساحيق الشرائح الرقيقة صول-جال أكسيد النحاس Index. décimale : 530 Physique Résumé : The object of this thesis is the synthesis and characterization of the copper oxide powders “CuO” and its composite thin film of (CuO/PMMA), by (sol-gel) process (wet-chemistry route), also the comparison between two methods of preparation using two different precursors.
The Work was divided into two parts:
The first part allowed to the preparation of the “CuO” powder, and its composite thin film of (CuO/PMMA), by the precursor (CuCl2, 2H2O), and the study of its structural, morphological, and optical properties, we also study in this part the annealing temperature effect on the size of CuO crystallites.
The second part was dedicated to prepare the CuO powder, and its composite thin film (CuO/PMMA), by precursor (Cu (CH3COO) 2, H2O), and DMF (CH3) 2 NC (OH), as solvent, and also the study of the structural, and optical properties.
Various analysis techniques have been used to characterize the CuO powders and its composite (CuO/PMMA) thin films, they are divided into two category:
- The structural analysis including the x-rays diffraction (XRD), the infrared spectroscopy (IR) and the electron scanning microscopy.
- Optical properties and band gap of CuO were studied by UV-Vis spectroscopy.
For the CuO powders prepared by the first precursor (CuCl2, 2H2O), and with different annealing temperatures, the study by x-rays diffraction (XRD) reveals single phase monoclinic structure of CuO, the average crystallite size increased with increasing of annealing temperature.
For the powder CuO to prepare with the second precursor (Cu (CH3COO) 2, H2O) the study by the x-rays diffraction(XRD) , reveals single phase monoclinic structure of CuO, the average crystallite size of the powder annealed to 450 C° is 16,76nm.
The study of the optical properties of the CuO/PMMA composite thin films by the two methods has shown a band gap is estimated to be 3, 90 eV.
Diplôme : Magistère En ligne : ../theses/physique/BAC6717.pdf Format de la ressource électronique : Permalink : index.php?lvl=notice_display&id=9906 Exemplaires (1)
Code-barres Cote Support Localisation Section Disponibilité BAC/6717 BAC/6717 Thèse Bibliothèque principale Thèses Disponible
