Titre :	Diagnostic d’un Plasma de Procédé de Couches Minces par Pulvérisation Cathodique
Type de document :	texte imprimé
Auteurs :	Nedjoua Benchiheb, Auteur ; Nadhir Attaf, Directeur de thèse
Editeur :	Constantine : Université Mentouri Constantine
Année de publication :	2015
Importance :	145 f.
Format :	30 cm.
Note générale :	2 copies imprimées disponibles
Langues :	Français (fre)
Tags :	Amorphous silicon  Sputtering  Plasma  Optical emission spectroscopy  Fast neutral  Silicium amorphe  Pulvérisation cathodique  Spectroscopie d’émission optique  Neutre rapide  ???????? ????????  ?? ?????  ??????  ??????? ???????? ??????  ??????? ??????
Index. décimale :	530 Physique
Résumé :	Our study was carried out to a better understanding of the phenomena governing Rf glow discharge plasmas used for the deposition of amorphous silicon thin films by sputtering technique. The optical emission spectroscopy (OES) diagnostic technique allowed us to identify the different excited species present in the plasma and to study the influence of preparation conditions on their distributions in the space between electrodes. The transition phenomena between α and γ regimes, as well as the multiplication by Penning effect, are observed. A new tool to estimate the sputtering yield based on the rate of sputtered atom intensity to projectile atom is proposed. It allows us to estimate experimentally the contribution of the fast atom created from the symmetric charge transfer collision in the target sputtering process. A physicochemical analysis shows the existence of a correlation between the three essential regions in the reactor : target / plasma / substrate.
Diplôme :	Doctorat en sciences
En ligne :	../theses/physique/BEN6755.pdf
Format de la ressource électronique :	pdf
Permalink :	https://bu.umc.edu.dz/md/index.php?lvl=notice_display&id=9860

Diagnostic d’un Plasma de Procédé de Couches Minces par Pulvérisation Cathodique [texte imprimé] / Nedjoua Benchiheb, Auteur ; Nadhir Attaf, Directeur de thèse . - Constantine : Université Mentouri Constantine, 2015 . - 145 f. ; 30 cm.
2 copies imprimées disponibles

Langues : Français (fre)

Tags :	Amorphous silicon  Sputtering  Plasma  Optical emission spectroscopy  Fast neutral  Silicium amorphe  Pulvérisation cathodique  Spectroscopie d’émission optique  Neutre rapide  ???????? ????????  ?? ?????  ??????  ??????? ???????? ??????  ??????? ??????
Index. décimale :	530 Physique
Résumé :	Our study was carried out to a better understanding of the phenomena governing Rf glow discharge plasmas used for the deposition of amorphous silicon thin films by sputtering technique. The optical emission spectroscopy (OES) diagnostic technique allowed us to identify the different excited species present in the plasma and to study the influence of preparation conditions on their distributions in the space between electrodes. The transition phenomena between α and γ regimes, as well as the multiplication by Penning effect, are observed. A new tool to estimate the sputtering yield based on the rate of sputtered atom intensity to projectile atom is proposed. It allows us to estimate experimentally the contribution of the fast atom created from the symmetric charge transfer collision in the target sputtering process. A physicochemical analysis shows the existence of a correlation between the three essential regions in the reactor : target / plasma / substrate.
Diplôme :	Doctorat en sciences
En ligne :	../theses/physique/BEN6755.pdf
Format de la ressource électronique :	pdf
Permalink :	https://bu.umc.edu.dz/md/index.php?lvl=notice_display&id=9860