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Partager le résultat de cette recherche Interroger des sources externesCaractérisations des réactions interfaciales dans les couches minces métalliques binaires et multiples / Farida Kezai (Née Medjani)
Titre : Caractérisations des réactions interfaciales dans les couches minces métalliques binaires et multiples Type de document : texte imprimé Auteurs : Farida Kezai (Née Medjani) ; Université Mentouri, Editeur scientifique ; Rachid Halimi, Directeur de thèse Année de publication : 2007 Importance : 89 f. Note générale : 01 Disponible à la salle de recherche 02 Disponibles au magazin de la B.U.C. 01 CD Langues : Français (fre) Catégories : Français - Anglais
PhysiqueTags : Pulvérisation Morphologie Multicouches TiN/AlN Nanocomposite Propriétés structurales Résistivité électrique Nanodureté Sputtering Multilayers TiN/AlN Zr-Si-N Structural proprieties Morphology Electrical resistivity Nanohardness Index. décimale : 530 Physique Résumé : DC reactive magnetron co-sputtering was used for the deposition of Zr-Si-N thin films and a multilayers TiN/AlN.
Si content (CSi) was varied by changing the power applied on the Si target, whereas that on Zr target was kept constant. Four series of samples have been deposited at various substrate temperatures: room temperature, 240 °C, 440 °C and 640 °C. The evolution of morphology,
crystalline structure, grain size and lattice constant has been investigated by X-ray diffraction analyses. Nanohardness, stress and resistivity measurements provide complementary information, which validate the proposed 3-step model for the film formation of the Zr-Si-N system deposited by reactive magnetron cosputtering. For low Si content the Si atoms substitute the Zr atoms in the ZrN lattice. Above the solubility limit, a nanocomposite film containing ZrN:Si nanocrystallites and amorphous SiNy is formed. Further increase of Si content results in a reduction of grain size (D), while the thickness of the SiNy layer at the crystallite surface remains constant. The increasing amount of the SiNy amorphous phase in the films is realized by increasing the surface to volume ratio of the crystallites. In this concentration range, the size of the crystallites in the Zr-Si-N films decreases according to the relationship CSi ~1/D. With
increasing the substrate temperature, the solubility limit of Si in ZrN decreases whereas the films’ global nitruration (CN /(CSi + CZr)) increases. The concentration dependence of the electrical resistivity is interpreted in terms of the variation of the SiNy layer thickness.
By controlling the thickness of individual layers (1-50 nm) and substrate bias (Vb = -25 V and V b = - 100V) two series of samples were prepared. The films were characterized using X-ray diffraction (DRX), cross-sectional electron microscopy (MET) and nanoindentation. The
measured hardness of multilayer films were found to be always higher than the rule of the mixture, but the magnitude of hardness enhancement was found to be dependent on the bilayer thickness and bias substrate. Decreasing progressively the layer thickness favors the alignment of
(0002) basal plan of w-AlN on (111) plane of TiN, and results in the development of strong (111) texture, prerequisite for stabilization of c-AlN and formation of epitaxial coherent structures.Diplôme : Doctorat En ligne : ../theses/physique/KEZ5008.pdf Permalink : https://bu.umc.edu.dz/md/index.php?lvl=notice_display&id=3347 Caractérisations des réactions interfaciales dans les couches minces métalliques binaires et multiples [texte imprimé] / Farida Kezai (Née Medjani) ; Université Mentouri, Editeur scientifique ; Rachid Halimi, Directeur de thèse . - 2007 . - 89 f.
01 Disponible à la salle de recherche 02 Disponibles au magazin de la B.U.C. 01 CD
Langues : Français (fre)
Catégories : Français - Anglais
PhysiqueTags : Pulvérisation Morphologie Multicouches TiN/AlN Nanocomposite Propriétés structurales Résistivité électrique Nanodureté Sputtering Multilayers TiN/AlN Zr-Si-N Structural proprieties Morphology Electrical resistivity Nanohardness Index. décimale : 530 Physique Résumé : DC reactive magnetron co-sputtering was used for the deposition of Zr-Si-N thin films and a multilayers TiN/AlN.
Si content (CSi) was varied by changing the power applied on the Si target, whereas that on Zr target was kept constant. Four series of samples have been deposited at various substrate temperatures: room temperature, 240 °C, 440 °C and 640 °C. The evolution of morphology,
crystalline structure, grain size and lattice constant has been investigated by X-ray diffraction analyses. Nanohardness, stress and resistivity measurements provide complementary information, which validate the proposed 3-step model for the film formation of the Zr-Si-N system deposited by reactive magnetron cosputtering. For low Si content the Si atoms substitute the Zr atoms in the ZrN lattice. Above the solubility limit, a nanocomposite film containing ZrN:Si nanocrystallites and amorphous SiNy is formed. Further increase of Si content results in a reduction of grain size (D), while the thickness of the SiNy layer at the crystallite surface remains constant. The increasing amount of the SiNy amorphous phase in the films is realized by increasing the surface to volume ratio of the crystallites. In this concentration range, the size of the crystallites in the Zr-Si-N films decreases according to the relationship CSi ~1/D. With
increasing the substrate temperature, the solubility limit of Si in ZrN decreases whereas the films’ global nitruration (CN /(CSi + CZr)) increases. The concentration dependence of the electrical resistivity is interpreted in terms of the variation of the SiNy layer thickness.
By controlling the thickness of individual layers (1-50 nm) and substrate bias (Vb = -25 V and V b = - 100V) two series of samples were prepared. The films were characterized using X-ray diffraction (DRX), cross-sectional electron microscopy (MET) and nanoindentation. The
measured hardness of multilayer films were found to be always higher than the rule of the mixture, but the magnitude of hardness enhancement was found to be dependent on the bilayer thickness and bias substrate. Decreasing progressively the layer thickness favors the alignment of
(0002) basal plan of w-AlN on (111) plane of TiN, and results in the development of strong (111) texture, prerequisite for stabilization of c-AlN and formation of epitaxial coherent structures.Diplôme : Doctorat En ligne : ../theses/physique/KEZ5008.pdf Permalink : https://bu.umc.edu.dz/md/index.php?lvl=notice_display&id=3347 Exemplaires (1)
Code-barres Cote Support Localisation Section Disponibilité KEZ/5008 KEZ/5008 Thèse Bibliothèque principale Thèses Disponible
Titre : Diagnostic d’un Plasma de Procédé de Couches Minces par Pulvérisation Cathodique Type de document : texte imprimé Auteurs : Nedjoua Benchiheb, Auteur ; Nadhir Attaf, Directeur de thèse Editeur : Constantine : Université Mentouri Constantine Année de publication : 2015 Importance : 145 f. Format : 30 cm. Note générale : 2 copies imprimées disponibles
Langues : Français (fre) Catégories : Français - Anglais
PhysiqueTags : Amorphous silicon Sputtering Plasma Optical emission spectroscopy Fast neutral Silicium amorphe Pulvérisation cathodique Spectroscopie d’émission optique Neutre rapide ???????? ???????? ?? ????? ?????? ??????? ???????? ?????? ???????
??????Index. décimale : 530 Physique Résumé : Our study was carried out to a better understanding of the phenomena governing Rf glow discharge plasmas used for the deposition of amorphous silicon thin films by sputtering technique. The optical emission spectroscopy (OES) diagnostic technique allowed us to identify the different excited species present in the plasma and to study the influence of preparation conditions on their distributions in the space between electrodes. The transition
phenomena between α and γ regimes, as well as the multiplication by Penning effect, are observed.
A new tool to estimate the sputtering yield based on the rate of sputtered atom intensity to projectile atom is proposed. It allows us to estimate experimentally the contribution of the fast atom created from the symmetric charge transfer collision in the target sputtering process.
A physicochemical analysis shows the existence of a correlation between the three essential regions in the
reactor : target / plasma / substrate.
Diplôme : Doctorat en sciences En ligne : ../theses/physique/BEN6755.pdf Format de la ressource électronique : Permalink : https://bu.umc.edu.dz/md/index.php?lvl=notice_display&id=9860 Diagnostic d’un Plasma de Procédé de Couches Minces par Pulvérisation Cathodique [texte imprimé] / Nedjoua Benchiheb, Auteur ; Nadhir Attaf, Directeur de thèse . - Constantine : Université Mentouri Constantine, 2015 . - 145 f. ; 30 cm.
2 copies imprimées disponibles
Langues : Français (fre)
Catégories : Français - Anglais
PhysiqueTags : Amorphous silicon Sputtering Plasma Optical emission spectroscopy Fast neutral Silicium amorphe Pulvérisation cathodique Spectroscopie d’émission optique Neutre rapide ???????? ???????? ?? ????? ?????? ??????? ???????? ?????? ???????
??????Index. décimale : 530 Physique Résumé : Our study was carried out to a better understanding of the phenomena governing Rf glow discharge plasmas used for the deposition of amorphous silicon thin films by sputtering technique. The optical emission spectroscopy (OES) diagnostic technique allowed us to identify the different excited species present in the plasma and to study the influence of preparation conditions on their distributions in the space between electrodes. The transition
phenomena between α and γ regimes, as well as the multiplication by Penning effect, are observed.
A new tool to estimate the sputtering yield based on the rate of sputtered atom intensity to projectile atom is proposed. It allows us to estimate experimentally the contribution of the fast atom created from the symmetric charge transfer collision in the target sputtering process.
A physicochemical analysis shows the existence of a correlation between the three essential regions in the
reactor : target / plasma / substrate.
Diplôme : Doctorat en sciences En ligne : ../theses/physique/BEN6755.pdf Format de la ressource électronique : Permalink : https://bu.umc.edu.dz/md/index.php?lvl=notice_display&id=9860 Exemplaires (1)
Code-barres Cote Support Localisation Section Disponibilité BEN/6755 BEN/6755 Thèse Bibliothèque principale Thèses Disponible
Titre : Etude de l'interaction entre le Zirconium en couche mince et un substrat en acier Type de document : texte imprimé Auteurs : Karim Benouareth, Auteur ; Abderaheman Bouabellou, Auteur Editeur : جامعة الإخوة منتوري قسنطينة Année de publication : 2018 Importance : 239 f. Format : 30 cm. Note générale : 2 copies imprimées disponibles
Langues : Français (fre) Catégories : Français - Anglais
PhysiqueTags : Carbure de zirconium nitrure de zirconium couches minces nitruration pulvérisation cathodique traitement thermique diffusion nanodureté Zirconium carbide zirconium nitride thin films sputtering heat treatment nanohardness ??????? ?????????? ??????? ??????? ??????? ???? ??????? ???????? ???????? ???????? ????????? Index. décimale : 530 Physique Résumé : Thin films of zirconium carbides and nitrides have been elaborated by depositing the zirconium films by RF magnetron sputtering on high carbon steel EN C100 (1 %wt. of carbon) and nitrided EN C100 steel substrates, followed by a thermal annealing of the (coatings/substrates) systems. By activing the interstitials atoms (carbone, nitrogen) diffusing from the substrate to the film, the thermal annealing leads to the formation of hard coatings with good adhesion to the substrate and excellent mechanical properties. The influence of annealing temperature on the microstructural and mechanical properties and on the formed compounds in the thin films is elucidated.
The nitridation of substrates using a thermochemical technique by ionic plasma allows the formation of stœchiometric compound ZrN of the nitride, while only the under-stœchiometric compound ZrC0.6 of the carbide which is formed on the pristine substrate. The measured values of hardness and Young modulus are 28 GPa and 380 GPa for the nitride film against 18 GPa and 240 GPa respectively for the carbide film.
Diplôme : Doctorat en sciences En ligne : ../theses/physique/BEN7272.pdf Format de la ressource électronique : Permalink : https://bu.umc.edu.dz/md/index.php?lvl=notice_display&id=10853 Etude de l'interaction entre le Zirconium en couche mince et un substrat en acier [texte imprimé] / Karim Benouareth, Auteur ; Abderaheman Bouabellou, Auteur . - [S.l.] : جامعة الإخوة منتوري قسنطينة, 2018 . - 239 f. ; 30 cm.
2 copies imprimées disponibles
Langues : Français (fre)
Catégories : Français - Anglais
PhysiqueTags : Carbure de zirconium nitrure de zirconium couches minces nitruration pulvérisation cathodique traitement thermique diffusion nanodureté Zirconium carbide zirconium nitride thin films sputtering heat treatment nanohardness ??????? ?????????? ??????? ??????? ??????? ???? ??????? ???????? ???????? ???????? ????????? Index. décimale : 530 Physique Résumé : Thin films of zirconium carbides and nitrides have been elaborated by depositing the zirconium films by RF magnetron sputtering on high carbon steel EN C100 (1 %wt. of carbon) and nitrided EN C100 steel substrates, followed by a thermal annealing of the (coatings/substrates) systems. By activing the interstitials atoms (carbone, nitrogen) diffusing from the substrate to the film, the thermal annealing leads to the formation of hard coatings with good adhesion to the substrate and excellent mechanical properties. The influence of annealing temperature on the microstructural and mechanical properties and on the formed compounds in the thin films is elucidated.
The nitridation of substrates using a thermochemical technique by ionic plasma allows the formation of stœchiometric compound ZrN of the nitride, while only the under-stœchiometric compound ZrC0.6 of the carbide which is formed on the pristine substrate. The measured values of hardness and Young modulus are 28 GPa and 380 GPa for the nitride film against 18 GPa and 240 GPa respectively for the carbide film.
Diplôme : Doctorat en sciences En ligne : ../theses/physique/BEN7272.pdf Format de la ressource électronique : Permalink : https://bu.umc.edu.dz/md/index.php?lvl=notice_display&id=10853 Exemplaires (1)
Code-barres Cote Support Localisation Section Disponibilité BEN/7272 BEN/7272 Thèse Bibliothèque principale Thèses Disponible
