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Partager le résultat de cette recherche Interroger des sources externesElaboration et caractérisation des couches minces du semiconducteur ZnO pures et dopées par le Cadmium / Badis Rahal
Titre : Elaboration et caractérisation des couches minces du semiconducteur ZnO pures et dopées par le Cadmium Type de document : texte imprimé Auteurs : Badis Rahal, Auteur ; Boubekeur Boudine, Directeur de thèse Editeur : جامعة الإخوة منتوري قسنطينة Année de publication : 2017 Importance : 117 f. Format : 30 cm. Note générale : 2 copies imprimées disponibles
Langues : Français (fre) Catégories : Français - Anglais
PhysiqueTags : Zinc oxide Cadmium oxide Nanocomposite Thin films Dip-coating Colloidal Sol-Gel Oxyde de zinc Oxyde de cadmium Couches minces Dip-Coating Colloïdale Index. décimale : 530 Physique Résumé : The present work consists in the elaboration and characterization of the undoped and
cadmium-doped ZnO with different concentrations of cadmium (Cd) (1, 2, 5 and 10% in weight)
thin films in order to improve the structural and optical properties of ZnO. The samples were
prepared using two methods; Colloidal and Sol-Gel and deposited on glass and silicon substrates
by the Dip-coating technique.
The structural characterization showed the formation of ZnO with hexagonal structure
(wurtzite) with a preferential orientation according to plane (002) (sol-gel method). With the
exception of doping with 10% Cd (colloidal method), the formation of the ZnO/CdO
nanocomposite was assisted. SEM and AFM images revealed the nanometric character of our
films. The Raman diffusion confirmed the results of the DRX that is the formation of ZnO with
hexagonal structure (wurtzite).
The RBS spectroscopy has proved the existence, in our films, of the elements (zinc,
cadmium and oxygen) and gave us an idea on the thickness of the thin films. The measurement
of ellipsometry allowed us to evaluate the refractive index of our films and to estimate their
thickness. UV-visible spectroscopy has shown that our layers have a transparency, in the visible,
which varies between 70 and 90%. And that the gap decreases with the increase in doping. The
photoluminescence of the films showed ultraviolet (UV) and visible emissions related to defects.
Auger analysis on layers deposited on silicon substrates gave us an estimate of the thickness.Diplôme : Doctorat en sciences En ligne : ../theses/physique/RAH7052.pdf Format de la ressource électronique : Permalink : index.php?lvl=notice_display&id=10548 Elaboration et caractérisation des couches minces du semiconducteur ZnO pures et dopées par le Cadmium [texte imprimé] / Badis Rahal, Auteur ; Boubekeur Boudine, Directeur de thèse . - جامعة الإخوة منتوري قسنطينة, 2017 . - 117 f. ; 30 cm.
2 copies imprimées disponibles
Langues : Français (fre)
Catégories : Français - Anglais
PhysiqueTags : Zinc oxide Cadmium oxide Nanocomposite Thin films Dip-coating Colloidal Sol-Gel Oxyde de zinc Oxyde de cadmium Couches minces Dip-Coating Colloïdale Index. décimale : 530 Physique Résumé : The present work consists in the elaboration and characterization of the undoped and
cadmium-doped ZnO with different concentrations of cadmium (Cd) (1, 2, 5 and 10% in weight)
thin films in order to improve the structural and optical properties of ZnO. The samples were
prepared using two methods; Colloidal and Sol-Gel and deposited on glass and silicon substrates
by the Dip-coating technique.
The structural characterization showed the formation of ZnO with hexagonal structure
(wurtzite) with a preferential orientation according to plane (002) (sol-gel method). With the
exception of doping with 10% Cd (colloidal method), the formation of the ZnO/CdO
nanocomposite was assisted. SEM and AFM images revealed the nanometric character of our
films. The Raman diffusion confirmed the results of the DRX that is the formation of ZnO with
hexagonal structure (wurtzite).
The RBS spectroscopy has proved the existence, in our films, of the elements (zinc,
cadmium and oxygen) and gave us an idea on the thickness of the thin films. The measurement
of ellipsometry allowed us to evaluate the refractive index of our films and to estimate their
thickness. UV-visible spectroscopy has shown that our layers have a transparency, in the visible,
which varies between 70 and 90%. And that the gap decreases with the increase in doping. The
photoluminescence of the films showed ultraviolet (UV) and visible emissions related to defects.
Auger analysis on layers deposited on silicon substrates gave us an estimate of the thickness.Diplôme : Doctorat en sciences En ligne : ../theses/physique/RAH7052.pdf Format de la ressource électronique : Permalink : index.php?lvl=notice_display&id=10548 Exemplaires (1)
Code-barres Cote Support Localisation Section Disponibilité RAH/7052 RAH/7052 Thèse Bibliothèque principale Thèses Disponible
Titre : Elaboration et caractérisation des couches minces de matériau CZTS (Cu2ZnSnS4) obtenues par voie sol gel : Applications a la photovoltaïque. Type de document : texte imprimé Auteurs : Mohamed Cherif Benachour, Auteur ; Rabah Bensaha, Directeur de thèse Mention d'édition : 05/11/2020 Editeur : جامعة الإخوة منتوري قسنطينة Année de publication : 2020 Importance : 122 f. Format : 30 cm. Note générale : 1 copies imprimées disponibles
Langues : Français (fre) Catégories : Français - Anglais
PhysiqueTags : physique: sciences des matériaux sciences des matériaux:Céramique CZTS dip-coating sol gel DRX cellule solaire solar cell PL طلاء بالغمس سائل الهلام ،خلية شمسية الاستضاءة الضوئية Index. décimale : 530 Physique Résumé :
Recently, considerable work has been done on the Cu2ZnSnS4 (CZTS) quaternary compound semiconductor, due to its simplicity, low cost and above all its flexibility in the combination of several chemical compounds, to make it a good absorbent layer for thin film solar cells and thermoelectric energy generator. CZTS thin films are a kind of p-type direct band gap semiconductor with a band gap value of Eg ≈ 1.5 eV for photoelectric energy conversion and are characterized by a large absorption coefficient (> 104 cm - 1). In this way, the aim of the present work is to study the parameters of the annealing temperature and optimal annealing time for the formation of pure CZTS thin layer. For this, we have developed a simple and non-toxic sulfur-free process using the sol gel process and the vacuum channels to prepare the thin layers of pure CZTS phase deposited on glass substrates by dip-coating technique and annealed at different temperatures. and different annealing times. We studied the effect of annealing temperature on the optical properties of CZTS thin films. The last ones were deposited by dip-coating technique using the sol-gel method. They found that increasing the annealing temperature from 200 to 500 °C for one hour (1h) reduced
the energy gap from 1.72 to 1.50 eV. So, they judged that these thin layers are good for solar cells. Consideration of these results prompted us to study the effect of the annealing time from 5 to 60 min on the properties of CZTS thin films. The samples obtained were studied by several techniques such as XRD, Raman spectroscopy, SEM, Atomic force microscopy (AFM), UV-vis spectroscopy and photoluminescence. Confirmed by Raman spectroscopy, XRD analysis reveals the formation of a single-phase Cu2ZnSnS4 compound, of quasistoichiometric composition, in the tetragonal structure of kesterite with a preferential orientation along the direction [112]. The grain size tends to increase as the duration of the annealing increases and the temperature of the annealing also increases, a result confirmed by SEM. The study of the morphology by SEM and AFM confirms that the thin films thus produced are homogeneous, without cracking, of nanometric structure and having a very low roughness (of the order of 1 nm). Optical measurements analysis reveals that the layers have a relatively high absorption coefficient in the visible spectrum with a range gap of 1.62−1.50 eV, which is somewhat close to the optimal value of the solar cell. The Luminous Spectra (PL) shows broad bands with a limited intensity of a maximum between 1.62 and 1.50 eV, corresponding to the optical range gap of CZTS and increasing with the annealing time. The study of electrical properties using I(V) also showed that increasing annealing time improves the electrical properties of the structure. In addition, we examined the problem of secondary phases and suggested a way to avoid its formation.
Note de contenu :
Annexes.Diplôme : Doctorat en sciences En ligne : ../theses/physique/BEN7667.pdf Format de la ressource électronique : Permalink : index.php?lvl=notice_display&id=11501 Elaboration et caractérisation des couches minces de matériau CZTS (Cu2ZnSnS4) obtenues par voie sol gel : Applications a la photovoltaïque. [texte imprimé] / Mohamed Cherif Benachour, Auteur ; Rabah Bensaha, Directeur de thèse . - 05/11/2020 . - جامعة الإخوة منتوري قسنطينة, 2020 . - 122 f. ; 30 cm.
1 copies imprimées disponibles
Langues : Français (fre)
Catégories : Français - Anglais
PhysiqueTags : physique: sciences des matériaux sciences des matériaux:Céramique CZTS dip-coating sol gel DRX cellule solaire solar cell PL طلاء بالغمس سائل الهلام ،خلية شمسية الاستضاءة الضوئية Index. décimale : 530 Physique Résumé :
Recently, considerable work has been done on the Cu2ZnSnS4 (CZTS) quaternary compound semiconductor, due to its simplicity, low cost and above all its flexibility in the combination of several chemical compounds, to make it a good absorbent layer for thin film solar cells and thermoelectric energy generator. CZTS thin films are a kind of p-type direct band gap semiconductor with a band gap value of Eg ≈ 1.5 eV for photoelectric energy conversion and are characterized by a large absorption coefficient (> 104 cm - 1). In this way, the aim of the present work is to study the parameters of the annealing temperature and optimal annealing time for the formation of pure CZTS thin layer. For this, we have developed a simple and non-toxic sulfur-free process using the sol gel process and the vacuum channels to prepare the thin layers of pure CZTS phase deposited on glass substrates by dip-coating technique and annealed at different temperatures. and different annealing times. We studied the effect of annealing temperature on the optical properties of CZTS thin films. The last ones were deposited by dip-coating technique using the sol-gel method. They found that increasing the annealing temperature from 200 to 500 °C for one hour (1h) reduced
the energy gap from 1.72 to 1.50 eV. So, they judged that these thin layers are good for solar cells. Consideration of these results prompted us to study the effect of the annealing time from 5 to 60 min on the properties of CZTS thin films. The samples obtained were studied by several techniques such as XRD, Raman spectroscopy, SEM, Atomic force microscopy (AFM), UV-vis spectroscopy and photoluminescence. Confirmed by Raman spectroscopy, XRD analysis reveals the formation of a single-phase Cu2ZnSnS4 compound, of quasistoichiometric composition, in the tetragonal structure of kesterite with a preferential orientation along the direction [112]. The grain size tends to increase as the duration of the annealing increases and the temperature of the annealing also increases, a result confirmed by SEM. The study of the morphology by SEM and AFM confirms that the thin films thus produced are homogeneous, without cracking, of nanometric structure and having a very low roughness (of the order of 1 nm). Optical measurements analysis reveals that the layers have a relatively high absorption coefficient in the visible spectrum with a range gap of 1.62−1.50 eV, which is somewhat close to the optimal value of the solar cell. The Luminous Spectra (PL) shows broad bands with a limited intensity of a maximum between 1.62 and 1.50 eV, corresponding to the optical range gap of CZTS and increasing with the annealing time. The study of electrical properties using I(V) also showed that increasing annealing time improves the electrical properties of the structure. In addition, we examined the problem of secondary phases and suggested a way to avoid its formation.
Note de contenu :
Annexes.Diplôme : Doctorat en sciences En ligne : ../theses/physique/BEN7667.pdf Format de la ressource électronique : Permalink : index.php?lvl=notice_display&id=11501 Exemplaires (1)
Code-barres Cote Support Localisation Section Disponibilité BEN/7667 BEN/7667 Thèse Bibliothèque principale Thèses Disponible
Titre : Elaboration et caractérisation des couches minces du semi-conducteur ZnO non dopé et dopé par l’Argent. Type de document : texte imprimé Auteurs : Abdelkarim Herzi, Auteur ; M. Sebais, Directeur de thèse Mention d'édition : 26/10/2020 Editeur : جامعة الإخوة منتوري قسنطينة Année de publication : 2020 Importance : 95 f. Format : 30 cm. Note générale : 1 copies imprimées disponibles
Langues : Français (fre) Catégories : Français - Anglais
PhysiqueTags : physique:Sciences des Matériaux Sciences des Matériaux:Cristallographie Oxyde de zinc dopé Ag Couches minces Sol-Gel Dip-Coating DRX MEB AFM Raman Photocatalyse Bleu de méthylène Ag doped Zinc oxide Thin films photocatalysis Methylene Blue أكسيد الزنك المطعم بالفضة أفلام رقيقة المحلول ـ الهلامي طلاء بالتراجع التحفيز الضوئي ازرق المثيلين Index. décimale : 530 Physique Résumé :
The present work consists in the elaboration and characterization of the undoped and silverdoped ZnO thin films with different concentrations of silver (Ag) (1,3,5,7 and 10% in weight) in order to improve the structural, morphological, optical, electrical and photocatalytic properties of ZnO. The samples were prepared using the Sol-Gel method and deposited on glass substrates by the Dip-coating ""Dipping-Drawing"" technique. The structural characterization showed the formation of ZnO of hexagonal structure (wurtzite) with a preferential orientation according to the plan (002) and allowedto determine the nanometric size of the crystallites. Only for doping with 10% Ag we observe the formation of the secondary phase AgO. SEM and AFM images revealed the nanometric character of our layers. Raman scattering confirmed the results of the XRD, namely the formation of ZnO with an hexagonal structure (wurtzite). UV-visible spectroscopy has shown that our layers have a transparency, in the visible range, which varies between 70 and 90%. And that the gap decreases with the increase in doping level. The photoluminescence of the films showed ultraviolet (UV) and visible emissions related to defects. Finally, we tested the photocatalytic efficiency of the undoped and silver-doped ZnO under UV irradiation regarding Methylene Blue dye degradation, It is noted that doping with silver improves the photocatalytic activity of thin films and that the highest activity is observed for ZnO doped with 7% of Ag
Diplôme : Doctorat en sciences En ligne : ../theses/physique/HER7687.pdf Format de la ressource électronique : Permalink : index.php?lvl=notice_display&id=11521 Elaboration et caractérisation des couches minces du semi-conducteur ZnO non dopé et dopé par l’Argent. [texte imprimé] / Abdelkarim Herzi, Auteur ; M. Sebais, Directeur de thèse . - 26/10/2020 . - جامعة الإخوة منتوري قسنطينة, 2020 . - 95 f. ; 30 cm.
1 copies imprimées disponibles
Langues : Français (fre)
Catégories : Français - Anglais
PhysiqueTags : physique:Sciences des Matériaux Sciences des Matériaux:Cristallographie Oxyde de zinc dopé Ag Couches minces Sol-Gel Dip-Coating DRX MEB AFM Raman Photocatalyse Bleu de méthylène Ag doped Zinc oxide Thin films photocatalysis Methylene Blue أكسيد الزنك المطعم بالفضة أفلام رقيقة المحلول ـ الهلامي طلاء بالتراجع التحفيز الضوئي ازرق المثيلين Index. décimale : 530 Physique Résumé :
The present work consists in the elaboration and characterization of the undoped and silverdoped ZnO thin films with different concentrations of silver (Ag) (1,3,5,7 and 10% in weight) in order to improve the structural, morphological, optical, electrical and photocatalytic properties of ZnO. The samples were prepared using the Sol-Gel method and deposited on glass substrates by the Dip-coating ""Dipping-Drawing"" technique. The structural characterization showed the formation of ZnO of hexagonal structure (wurtzite) with a preferential orientation according to the plan (002) and allowedto determine the nanometric size of the crystallites. Only for doping with 10% Ag we observe the formation of the secondary phase AgO. SEM and AFM images revealed the nanometric character of our layers. Raman scattering confirmed the results of the XRD, namely the formation of ZnO with an hexagonal structure (wurtzite). UV-visible spectroscopy has shown that our layers have a transparency, in the visible range, which varies between 70 and 90%. And that the gap decreases with the increase in doping level. The photoluminescence of the films showed ultraviolet (UV) and visible emissions related to defects. Finally, we tested the photocatalytic efficiency of the undoped and silver-doped ZnO under UV irradiation regarding Methylene Blue dye degradation, It is noted that doping with silver improves the photocatalytic activity of thin films and that the highest activity is observed for ZnO doped with 7% of Ag
Diplôme : Doctorat en sciences En ligne : ../theses/physique/HER7687.pdf Format de la ressource électronique : Permalink : index.php?lvl=notice_display&id=11521 Exemplaires (1)
Code-barres Cote Support Localisation Section Disponibilité HER/7687 HER/7687 Thèse Bibliothèque principale Thèses Disponible
Titre : Elaboration des Couches minces du Semiconducteur ZnO dopées au Cobalt et étude de leurs propriétés structurales, optiques et électriques. Type de document : texte imprimé Auteurs : Ahmed Reda Khantoul, Auteur ; Miloud Seffari, Directeur de thèse Editeur : جامعة الإخوة منتوري قسنطينة Année de publication : 2018 Importance : 108 f. Format : 30 cm. Note générale : 2 copies imprimées disponibles
Langues : Français (fre) Catégories : Français - Anglais
PhysiqueTags : Oxyde de zinc Cobalt Couches minces Dip-Coating Sol-Gel DRX MEB AFM Raman UV-Visible photoluminescence Zinc oxide cobalt thin films SEM أكسيد الزنك كوبالت أفلام رقيقة طلاء بالتراجع المحلول-الهلامي أطياف حيود الاشعة السينية المجهر الالكتروني الماسح مجهر القوة الذرية انتشار رامول الطيفي التحليل الطيفي للأشعة فوق البنفسجية-المرئية تقنية الفوتو ضوئيات Index. décimale : 530 Physique Résumé : The present work consists in the elaboration and characterization of the undoped and cobalt-doped ZnO with different concentrations of cobalt (Co) (0.5, 1, 5 and 10% in weight) thin films in order to improve the structural, morphological, optical and electrical properties of ZnO. The samples were prepared using the Sol-Gel method and deposited on glass substrates by the Dip-coating ""Dipping-Drawing"" technique. Structural haracterization showed the formation of ZnO of hexagonal structure (wurtzite) with a preferential orientation according to plane (002) and made it possible to determine the nanometric size of the crystallites. The SEM and AFM images revealed the nanometric character of our layers. Raman scattering confirmed the results of the XRD, namely the formation of ZnO with an hexagonal structure (wurtzite). UV-visible spectroscopy has shown that our layers have a transparency, in the visible, which varies between 80 and 98%. It has shown also that the gap decreases with the increase in doping. The hotoluminescence of the films showed ultraviolet (UV) and visible emissions related to defects. The codoping of aluminum to cobalt allowed us also to improve the structural and optical properties.
Diplôme : Doctorat en sciences En ligne : ../theses/physique/KHA7383.pdf Format de la ressource électronique : Permalink : index.php?lvl=notice_display&id=11033 Elaboration des Couches minces du Semiconducteur ZnO dopées au Cobalt et étude de leurs propriétés structurales, optiques et électriques. [texte imprimé] / Ahmed Reda Khantoul, Auteur ; Miloud Seffari, Directeur de thèse . - جامعة الإخوة منتوري قسنطينة, 2018 . - 108 f. ; 30 cm.
2 copies imprimées disponibles
Langues : Français (fre)
Catégories : Français - Anglais
PhysiqueTags : Oxyde de zinc Cobalt Couches minces Dip-Coating Sol-Gel DRX MEB AFM Raman UV-Visible photoluminescence Zinc oxide cobalt thin films SEM أكسيد الزنك كوبالت أفلام رقيقة طلاء بالتراجع المحلول-الهلامي أطياف حيود الاشعة السينية المجهر الالكتروني الماسح مجهر القوة الذرية انتشار رامول الطيفي التحليل الطيفي للأشعة فوق البنفسجية-المرئية تقنية الفوتو ضوئيات Index. décimale : 530 Physique Résumé : The present work consists in the elaboration and characterization of the undoped and cobalt-doped ZnO with different concentrations of cobalt (Co) (0.5, 1, 5 and 10% in weight) thin films in order to improve the structural, morphological, optical and electrical properties of ZnO. The samples were prepared using the Sol-Gel method and deposited on glass substrates by the Dip-coating ""Dipping-Drawing"" technique. Structural haracterization showed the formation of ZnO of hexagonal structure (wurtzite) with a preferential orientation according to plane (002) and made it possible to determine the nanometric size of the crystallites. The SEM and AFM images revealed the nanometric character of our layers. Raman scattering confirmed the results of the XRD, namely the formation of ZnO with an hexagonal structure (wurtzite). UV-visible spectroscopy has shown that our layers have a transparency, in the visible, which varies between 80 and 98%. It has shown also that the gap decreases with the increase in doping. The hotoluminescence of the films showed ultraviolet (UV) and visible emissions related to defects. The codoping of aluminum to cobalt allowed us also to improve the structural and optical properties.
Diplôme : Doctorat en sciences En ligne : ../theses/physique/KHA7383.pdf Format de la ressource électronique : Permalink : index.php?lvl=notice_display&id=11033 Exemplaires (1)
Code-barres Cote Support Localisation Section Disponibilité KHA/7383 KHA/7383 Thèse Bibliothèque principale Thèses Disponible
